Citation: |
Ma Ziwen, Tang Zirong, Liao Guanglan, Shi Tielin. Criterion of Microroughness for Self-Propagating Wafer Bonding[J]. Journal of Semiconductors, 2007, 28(3): 465-469.
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Ma Z W, Tang Z R, Liao G L, Shi T L. Criterion of Microroughness for Self-Propagating Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(3): 465.
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Criterion of Microroughness for Self-Propagating Wafer Bonding
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Abstract
The criterion of microroughness for self-propagating wafer bonding is studied according to JKR contact theory, where the microroughness model is based on a sinusoidal distribution for gap height and gap length. Our analysis shows that the criterion for self-propagating wafer bonding is relevant to the dimensionless parameter.In silicon wafer bonding, using the dimensionless parameter as a measure,three regions of silicon wafer bonding can be identified:self-propagating silicon wafer bonding (α>1.065),external pressure assisted silicon wafer bonding (0.57<α<1.065), and silicon wafer bonding with voids (α<0.57).Experimental data are in reasonable agreement with this theory. -
References
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