Chin. J. Semicond. > 1998, Volume 19 > Issue 10 > 756-763
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深亚微米薄膜全耗尽SOI MOSFET的强反型电流模型

汪红梅 , 奚雪梅 , 张兴 and 王阳元

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(10): 756-763
      汪红梅, 奚雪梅, 张兴, 王阳元. 深亚微米薄膜全耗尽SOI MOSFET的强反型电流模型[J]. 半导体学报(英文版), 1998, 19(10): 756-763.
      Citation:
      汪红梅, 奚雪梅, 张兴, 王阳元. 深亚微米薄膜全耗尽SOI MOSFET的强反型电流模型[J]. 半导体学报(英文版), 1998, 19(10): 756-763.
      shu

      • Received Date: 2015-08-18

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