J. Semicond. > 2008, Volume 29 > Issue 3 > 566-569
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A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector

Cheng Caijing, Ding Jiaxin, Zhang Xiangfeng, Zhao Hongyan, Lu Zhengxiong, Si Junjie, Sun Weiguo, Sang Liwen and Zhang Guoyi

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Abstract: Back-illuminated Al0.42Ga0.58N/Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodetectors grown on sapphire by metal organic chemical vapor deposition are fabricated.An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.The external quantum efficiency and detectivity at a peak wavelength of 275nm at zero-bias voltage are 9% and 4.98e11cm·Hz1/2·W-1,respectively.Mere 15.7% of the spectral transmittance of the Al0.42Ga0.58N window layer at 275nm results in the low external quantum efficiency and detectivity.

Key words: solar-blind UV photodetector, ideality factor, series resistance, photoresponse, detectivity

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    Received: 18 August 2015 Revised: 13 September 2007 Online: Published: 01 March 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(3): 566-569
      Cheng Caijing, Ding Jiaxin, Zhang Xiangfeng, Zhao Hongyan, Lu Zhengxiong, Si Junjie, Sun Weiguo, Sang Liwen, Zhang Guoyi. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. Journal of Semiconductors, 2008, 29(3): 566-569. ****Cheng C J, Ding J X, Zhang X F, Zhao H Y, Lu Z X, Si J J, Sun W G, Sang L W, Zhang G Y. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. J. Semicond., 2008, 29(3): 566.
      Citation:
      Cheng Caijing, Ding Jiaxin, Zhang Xiangfeng, Zhao Hongyan, Lu Zhengxiong, Si Junjie, Sun Weiguo, Sang Liwen, Zhang Guoyi. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. Journal of Semiconductors, 2008, 29(3): 566-569. ****
      Cheng C J, Ding J X, Zhang X F, Zhao H Y, Lu Z X, Si J J, Sun W G, Sang L W, Zhang G Y. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. J. Semicond., 2008, 29(3): 566.
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      A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • China Airborne Missile Academy,Luoyang 471009,China

      • Department of Physics,Beijing University,Beijing 100871,China

      • Department of Physics,Beijing University,Beijing 100871,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-14
      • Revised Date: 2007-09-13
      • Published Date: 2008-02-28

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