A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector

Cheng Caijing; Ding Jiaxin; Zhang Xiangfeng; Zhao Hongyan; Lu Zhengxiong; Si Junjie; Sun Weiguo; Sang Liwen; Zhang Guoyi

J. Semicond. > 2008, Volume 29 > Issue 3 > 566-569

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A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector

Cheng Caijing, Ding Jiaxin, Zhang Xiangfeng, Zhao Hongyan, Lu Zhengxiong, Si Junjie, Sun Weiguo, Sang Liwen and Zhang Guoyi

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Abstract: Back-illuminated Al0.42Ga0.58N/Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodetectors grown on sapphire by metal organic chemical vapor deposition are fabricated.An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.The external quantum efficiency and detectivity at a peak wavelength of 275nm at zero-bias voltage are 9% and 4.98e11cm·Hz1/2·W-1,respectively.Mere 15.7% of the spectral transmittance of the Al0.42Ga0.58N window layer at 275nm results in the low external quantum efficiency and detectivity.

Key words: solar-blind UV photodetector, ideality factor, series resistance, photoresponse, detectivity

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Received: 18 August 2015 Revised: 13 September 2007 Online: Published: 01 March 2008

Back-illuminated Al0.42Ga0.58N/Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodetectors grown on sapphire by metal organic chemical vapor deposition are fabricated.An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.The external quantum efficiency and detectivity at a peak wavelength of 275nm at zero-bias voltage are 9% and 4.98e11cm·Hz1/2·W-1,respectively.Mere 15.7% of the spectral transmittance of the Al0.42Ga0.58N window layer at 275nm results in the low external quantum efficiency and detectivity.

A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector

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