Abstract: A quantum model based on solutions to the Schrdinger-Poisson equations is developed to investigate the device behavior related to gate tunneling current for nanoscale MOSFETs with high-k gate stacks.This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance.Comparisons are made for gate current behavior between nMOSFET and pMOSFET high-k gate stack structures.The results presented are consistent with experimental data,whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.

Key words: high-k,  gate current,  quantum model