| Citation: |
Liang Zhimei, Wu Ju, Jin Peng, Lü Xueqin, Wang Zhanguo. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. Journal of Semiconductors, 2008, 29(11): 2121-2124.
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Liang Z M, Wu J, Jin P, Lü X, Wang Z G. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. J. Semicond., 2008, 29(11): 2121.
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The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots
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Abstract
Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes are deduced. -
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