Chin. J. Semicond. > 1995, Volume 16 > Issue 9 > 706-710
|

CONTENTS

高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究

杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2298 Times PDF downloads: 847 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 1995

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1995  >  16(9): 706-710
      杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟. 高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究[J]. 半导体学报(英文版), 1995, 16(9): 706-710.
      Citation:
      杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟. 高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究[J]. 半导体学报(英文版), 1995, 16(9): 706-710.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return