| Citation: |
Zhang Zhenxing, Xie Erqing, Pan Xiaojun, Jia Lu, Han Weihua. Space-Charge-Limited Current Properties of Amorphous GaN Thin Films[J]. Journal of Semiconductors, 2006, 27(S1): 113-116.
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Zhang Z X, Xie E Q, Pan X J, Jia L, Han W H. Space-Charge-Limited Current Properties of Amorphous GaN Thin Films[J]. Chin. J. Semicond., 2006, 27(13): 113.
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Space-Charge-Limited Current Properties of Amorphous GaN Thin Films
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Abstract
Amorphous GaN thin films are deposited on silicon substrates by magnetron sputtering.The current-voltage characteristics of the GaN Schottky diodes cannot be understood in terms of thermionic emission simply by including the effects of a series resistance and recombination current,which suggests that other current transport mechanism (space charge limited current,SCLC) is dominant.Analysis of the data indicates an equilibrium electron concentration of 1.1E4cm-3 and a trap located 0.363eV below the conduction band edge.SCLC measurements may be used to probe the properties of deep levels in the wide bandgap amorphous GaN. -
References
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