| Citation: |
Jia Lu, Xie Erqing, Pan Xiaojun, Zhang Zhenxing. Optical Properties of a-GaN Deposited by Sputtering[J]. Journal of Semiconductors, 2006, 27(S1): 109-112.
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Jia L, Xie E Q, Pan X J, Zhang Z X. Optical Properties of a-GaN Deposited by Sputtering[J]. Chin. J. Semicond., 2006, 27(13): 109.
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Optical Properties of a-GaN Deposited by Sputtering
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Abstract
GaN films are deposited by direct current reactive sputtering.X-ray diffraction (XRD),Fourier infrared absorption spectrum (FTIR),and UV-VIS spectrum are carried out.The XRD patterns indicate that the GaN films deposited at room temperature have amorphous structures.The UV-VIS spectrum indicates that the sample is thicker with increasing substrate temperature,but the optical bandgap is narrower.Ar pressure has a big influence on the bandgap and the roughness of the films.-
Keywords:
- sputter,
- a-GaN,
- optical bandgap,
- absorption coefficient
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References
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Proportional views
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