| Citation: |
Lü Yanqiu, Zhuang Chunquan, Huang Yangcheng, Li Ping, Gong Haimei. Properties of Zn-Diffused InP Surfaces with Sealed Tube Method[J]. Journal of Semiconductors, 2006, 27(S1): 105-108.
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Lü Y, Zhuang C Q, Huang Y C, Li P, Gong H M. Properties of Zn-Diffused InP Surfaces with Sealed Tube Method[J]. Chin. J. Semicond., 2006, 27(13): 105.
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Properties of Zn-Diffused InP Surfaces with Sealed Tube Method
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Abstract
Zn3P2 used as source,(100) oriented and unintended doped InP wafers are diffused with the sealed tube method at different diffusion temperatures and diffusion times.Hole and Zn depth profiles are measured by electrical chemical capacitance-voltage (ECV) and secondary ion mass spectroscopy (SIMS).The results show that the concentrations of hole and Zn in InP layers after diffusion decrease sharply at the diffused/virgin interface.The hole concentration at InP surfaces primary depends on diffusion temperature.The thickness of the diffused layer increases with diffusion time.The Zn concentration is higher one magnitude of order than the hole concentration at InP surfaces.Furthermore,photoluminescence measurement shows that the properties of InP surfaces change little by properly decreasing diffusion temperature and increasing diffusion time if the carrier concentration is enough.-
Keywords:
- sealed tube method,
- ECV,
- SIMS,
- PL
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References
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Proportional views
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