| Citation: |
Liu Bin, Zhang Rong, Xie Zili, Xiu Xiangqian, Li Liang, Liu Chengxiang, Han Ping, Zheng Youdou. Influence of GaN Buffer Layer for InN Growth[J]. Journal of Semiconductors, 2006, 27(S1): 101-104.
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Liu B, Zhang R, Xie Z L, Xiu X Q, Li L, Liu C X, Han P, Zheng Y D. Influence of GaN Buffer Layer for InN Growth[J]. Chin. J. Semicond., 2006, 27(13): 101.
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Influence of GaN Buffer Layer for InN Growth
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Abstract
The growth of hexagonal InN film on sapphire (0001) by metal organic chemical vapor deposition was investigated.The high quality InN film was obtained by using LT GaN buffer layer.The photoluminescence (PL) from InN film demonstrated that the optical band gap of InN is 0.7eV.By comparatively studying the influence of different GaN buffer layer:no GaN buffer layer (directly grown),low-temperature (LT) and high-temperature (HT) GaN buffer layers,LT GaN and annealing at high temperatures,the better crystalline quality and the smoother surface of InN film grown by using LT GaN buffer layer were found,which could be explained by the different growth mode of InN.The electrical properties of InN film also characterized by Hall effect measurements.The highest mobility of 567cm2/ (V·s) was obtained.-
Keywords:
- hexagonal InN,
- MOCVD,
- GaN buffer layer
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References
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Proportional views
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