| Citation: |
Liu Chengxiang, Xie Zili, Han Ping, Liu Bin, Li Liang, Fu Kai, Zhou Jianjun, Ye Jiandong, Wen Bo, Wang Ronghua, Zhang Yu, Chen Dunjun, Jiang Ruolian, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou. Investigation of Indium Surface Segregation in InxGa1-xN Films[J]. Journal of Semiconductors, 2006, 27(S1): 97-100.
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Liu C X, Xie Z L, Han P, Liu B, Li L, Fu K, Zhou J J, Ye J and o N, Wen B, Wang R H, Zhang Y, Chen D J, Jiang R L, Gu S L, Shi Y, Zhang R, Zheng Y D. Investigation of Indium Surface Segregation in InxGa1-xN Films[J]. Chin. J. Semicond., 2006, 27(13): 97.
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Investigation of Indium Surface Segregation in InxGa1-xN Films
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Abstract
InxGa1-xN alloy film has been epitaxially grown on sapphire (0001) substrate by MOCVD.The measurement results show that the indium content of InxGa1-xN film decreases from 0.72 to 0.27 as the substrate temperature increases from 620℃ to 740℃.This indicates that an increase in the growth temperature results in a lower indium incorporation efficiency in the InxGa1-xN film.According to the results of X-ray diffraction and X-ray photoelectron spectroscopy,the phenomenon of In surface segregation occurs during growing InxGa1-xN film at 620℃ and 690℃.This phenomenon,however,is controlled when the substrate temperature increases to be as high as 740℃.The indium aggregation in the InxGa1-xN film can be avoided since the higher growth temperature results in the increment of the desorption rate for the excess In and the enhancement of the surface mobility for the In atom.As the V/III ratios increasing from 14000 to 38000 at the same temperature of 690℃,the phenomenon of In surface segregation is reduced due to the more activated N supplied by the higher V/III ratio which is prone to forming In-N bonds.-
Keywords:
- InxGa1-xN films,
- surface segregation,
- V/III ratios
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References
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Proportional views
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