| Citation: |
Wen Bo, Jiang Ruolian, Liu Chengxiang, Xie Zili, Zhou Jianjun, Han Ping, Zhang Rong, Zheng Youdou. Influence of Thermal Annealing on Properties of InGaN Films[J]. Journal of Semiconductors, 2006, 27(S1): 92-96.
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Wen B, Jiang R L, Liu C X, Xie Z L, Zhou J J, Han P, Zhang R, Zheng Y D. Influence of Thermal Annealing on Properties of InGaN Films[J]. Chin. J. Semicond., 2006, 27(13): 92.
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Influence of Thermal Annealing on Properties of InGaN Films
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Abstract
InGaN films with an indium composition of 0.14 grown by metal organic chemical vapor deposition were thermally annealed at different temperature.The evolutions of crystalline property,surface morphology,optical characteristic and electric characteristic of In0.14Ga0.86N films with the annealing temperature were studied by X-ray diffraction,atomic force microscope,photoluminescence,and variable temperature Hall measurements.By comparison,an optimum annealing temperature of 500℃ for improving the properties of In0.14Ga0.86N film was obtained.The multiple scattering mechanisms in the film and their variations after thermal annealing were also analyzed by fitting the experimental data of variable temperature Hall measurements.-
Keywords:
- InGaN,
- thermal annealing,
- scattering mechanism
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References
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Proportional views
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