Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 458-461
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采用注入隔离制造的AlGaN/GaN HEMTs器件

肖冬萍 , 刘键 , 魏珂 , 和致经 , 王润梅 , 刘新宇 and 吴德馨

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Key words: AlGaN/GaN, HEMT, 离子注入

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 458-461
      肖冬萍, 刘键, 魏珂, 和致经, 王润梅, 刘新宇, 吴德馨. 采用注入隔离制造的AlGaN/GaN HEMTs器件[J]. 半导体学报(英文版), 2004, 25(4): 458-461.
      Citation:
      肖冬萍, 刘键, 魏珂, 和致经, 王润梅, 刘新宇, 吴德馨. 采用注入隔离制造的AlGaN/GaN HEMTs器件[J]. 半导体学报(英文版), 2004, 25(4): 458-461.
      shu

      • Received Date: 2015-08-19

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