Chin. J. Semicond. > 2003, Volume 24 > Issue 5 > 516-519
|

CONTENTS

Flash器件中氧化硅/氮化硅/氧化硅的特性

欧文 , 李明 and 钱鹤

+ Author Affiliations

PDF

Key words: 快闪存储器, ONO介质层, 漏电, 临界电场强度

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2643 Times PDF downloads: 909 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(5): 516-519
      欧文, 李明, 钱鹤. Flash器件中氧化硅/氮化硅/氧化硅的特性[J]. 半导体学报(英文版), 2003, 24(5): 516-519.
      Citation:
      欧文, 李明, 钱鹤. Flash器件中氧化硅/氮化硅/氧化硅的特性[J]. 半导体学报(英文版), 2003, 24(5): 516-519.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return