Chin. J. Semicond. > 1999, Volume 20 > Issue 2 > 135-138
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128×128元硅场发射阵列的氩离子束刻蚀制作

张新宇 , 易新建 , 赵兴荣 , 张智 and 何苗

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(2): 135-138
      张新宇, 易新建, 赵兴荣, 张智, 何苗. 128×128元硅场发射阵列的氩离子束刻蚀制作[J]. 半导体学报(英文版), 1999, 20(2): 135-138.
      Citation:
      张新宇, 易新建, 赵兴荣, 张智, 何苗. 128×128元硅场发射阵列的氩离子束刻蚀制作[J]. 半导体学报(英文版), 1999, 20(2): 135-138.
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      • Received Date: 2015-08-20

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