Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 440-445

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Key words: 加压布里奇曼法, HgCdTe晶体, 二次配料工艺, 晶体结构完整性, 组分均匀性

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      王跃, 李全保, 韩庆林, 马庆华, 宋炳文, 介万奇, 周尧和. 加压布里奇曼法生长大直径HgCdTe晶体[J]. 半导体学报(英文版), 2001, 22(4): 440-445.
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      王跃, 李全保, 韩庆林, 马庆华, 宋炳文, 介万奇, 周尧和. 加压布里奇曼法生长大直径HgCdTe晶体[J]. 半导体学报(英文版), 2001, 22(4): 440-445.

      • Received Date: 2015-08-20

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