| Citation: |
Ma Long, Huang Yinglong, Zhang Yang, Wang Liangchen, Yang Fuhua, Zeng Yiping. Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J]. Journal of Semiconductors, 2006, 27(6): 959-962.
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Ma L, Huang Y L, Zhang Y, Wang L C, Yang F H, Zeng Y P. Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J]. Chin. J. Semicond., 2006, 27(6): 959.
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Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
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Abstract
A high performance AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching.This RTD has a peak-to-valley current ratio (PVCR) of 7.57 and a peak current density Jp=39.08kA/cm2 under forward bias at room temperature.Under reverse bias,the corresponding values are 7.93 and 34.56kA/cm2.A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire.The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed. -
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