| Citation: |
Liu Wenping, Li Tie, Yang Heng, Jiao Jiwei, Li Xinxin, Wang Yuelin. Silicon Nanowires Fabricated by MEMS Technology and Their Electronic Performance[J]. Journal of Semiconductors, 2006, 27(9): 1645-1649.
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Liu W P, Li T, Yang H, Jiao J W, Li X X, Wang Y L. Silicon Nanowires Fabricated by MEMS Technology and Their Electronic Performance[J]. Chin. J. Semicond., 2006, 27(9): 1645.
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Silicon Nanowires Fabricated by MEMS Technology and Their Electronic Performance
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Abstract
A novel diameter-controllable on-chip silicon nanowire is fabricated by traditional MEMS technology on a silicon-on-insulator substrate.The thickness of the nanowires is determined by thermal oxidation,and the width is achieved in the nanometer scale by isotropic and anisotropic self-stop etching with masks of SiO2 and Si3N4.SEM photos of the nanowires indicate that the thickness and width of the nanowires are both less than 100nm and the thinnest one is less than 20nm.The electronic properties of the as-released silicon nanowires are different from those with thick oxide shells.Their resistance increases gradually with time as they are exposed to air.Further experiments show that the adsorption of water plays a key role in the process.-
Keywords:
- silicon nanowire,
- MEMS,
- surface adsorption
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References
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Proportional views
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