Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 185-190
|

CONTENTS

用正电子湮没方法鉴别InP半导体中的缺陷

陈志权 , 胡新文 and 王少阶

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2031 Times PDF downloads: 1425 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 185-190
      陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. 半导体学报(英文版), 1998, 19(3): 185-190.
      Citation:
      陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. 半导体学报(英文版), 1998, 19(3): 185-190.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return