Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 185-190
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用正电子湮没方法鉴别InP半导体中的缺陷

陈志权 , 胡新文 and 王少阶

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 185-190
      陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. 半导体学报(英文版), 1998, 19(3): 185-190.
      Citation:
      陈志权, 胡新文, 王少阶. 用正电子湮没方法鉴别InP半导体中的缺陷[J]. 半导体学报(英文版), 1998, 19(3): 185-190.
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      • Received Date: 2015-08-20

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