Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 191-196
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AlGaAs/GaAs HEMT中界面态对沟道层电场特性影响的二维数值研究

张兴宏 , 杨玉芬 and 王占国

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    安俊明, 郜定山, 李健, 李建光, 王红杰, 胡雄伟. SiON对Si基SiO_2AWG偏振补偿的数值分析[J]. 半导体学报(英文版), 2004, 25(7): 858-862.
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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 191-196
      安俊明, 郜定山, 李健, 李建光, 王红杰, 胡雄伟. SiON对Si基SiO_2AWG偏振补偿的数值分析[J]. 半导体学报(英文版), 2004, 25(7): 858-862.
      Citation:
      张兴宏, 杨玉芬, 王占国. AlGaAs/GaAs HEMT中界面态对沟道层电场特性影响的二维数值研究[J]. 半导体学报(英文版), 1998, 19(3): 191-196.
      shu

      • Received Date: 2015-08-20

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