Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 197-201
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GaN/6H-SiC紫外探测器的光电流性质研究

臧岚 , 杨凯 , 张荣 , 沈波 , 陈志忠 , 陈鹏 , 周玉刚 , 郑有炓 and 黄振春

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 197-201
      臧岚, 杨凯, 张荣, 沈波, 陈志忠, 陈鹏, 周玉刚, 郑有炓, 黄振春. GaN/6H-SiC紫外探测器的光电流性质研究[J]. 半导体学报(英文版), 1998, 19(3): 197-201.
      Citation:
      臧岚, 杨凯, 张荣, 沈波, 陈志忠, 陈鹏, 周玉刚, 郑有炓, 黄振春. GaN/6H-SiC紫外探测器的光电流性质研究[J]. 半导体学报(英文版), 1998, 19(3): 197-201.
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      • Received Date: 2015-08-20

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