Chin. J. Semicond. > 1988, Volume 9 > Issue 3 > 312-314
|

CONTENTS

掺氮区熔硅单晶深能级的研究

栾洪发 , 梁骏吾 , 邓礼生 , 郑红军 and 黄大定

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2583 Times PDF downloads: 996 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 1988

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1988  >  9(3): 312-314
      栾洪发, 梁骏吾, 邓礼生, 郑红军, 黄大定. 掺氮区熔硅单晶深能级的研究[J]. 半导体学报(英文版), 1988, 9(3): 312-314.
      Citation:
      栾洪发, 梁骏吾, 邓礼生, 郑红军, 黄大定. 掺氮区熔硅单晶深能级的研究[J]. 半导体学报(英文版), 1988, 9(3): 312-314.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return