Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1240-1245
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衬底热空穴注入下的薄栅氧化层击穿特性(英文)

刘红侠 and 郝跃

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Key words: 衬底热空穴(SHH), 薄栅氧化层, 击穿电荷, 模型

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1240-1245
      刘红侠, 郝跃. 衬底热空穴注入下的薄栅氧化层击穿特性(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1240-1245.
      Citation:
      刘红侠, 郝跃. 衬底热空穴注入下的薄栅氧化层击穿特性(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1240-1245.
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      • Received Date: 2015-08-20

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