PAPERS
Abstract: A chaotic random number generator (CRNG) is developed.It is realized by analog circuit,but could be fabricated in a standard digital CMOS process.Thus the CRNG could be used as the intelligent property for the design of an SOC.All capacitors are realized using MOS devices operated in the depletion region,and MOSCAPS are linearized by a series compensation technique.The CRNG has been tapped out in TSMC with a conventional 0.25μm digital n-well CMOS process.Testing of the CRNG chip has also been completed.The test results show that the numbers generated by the CRNG are in fact random.
Key words: random number generator, chaos, MOS capacitor, switched capacitor
| 1 |
Raheela Rasool, Najeeb-ud-Din, G. M. Rather Journal of Semiconductors, 2019, 40(12): 122401. doi: 10.1088/1674-4926/40/12/122401 |
| 2 |
Jingkang Gong, Jingping Xu, Lu Liu, Hanhan Lu, Xiaoyu Liu, et al. Journal of Semiconductors, 2017, 38(9): 094004. doi: 10.1088/1674-4926/38/9/094004 |
| 3 |
Zizeng Lin, Mingmin Cao, Shengkai Wang, Qi Li, Gongli Xiao, et al. Journal of Semiconductors, 2016, 37(2): 026002. doi: 10.1088/1674-4926/37/2/026002 |
| 4 |
Hong Zhang, Jie Zhang, Mudan Zhang, Xue Li, Jun Cheng, et al. Journal of Semiconductors, 2015, 36(3): 035002. doi: 10.1088/1674-4926/36/3/035002 |
| 5 |
Comparative study of leakage power in CNTFET over MOSFET device Sanjeet Kumar Sinha, Saurabh Chaudhury Journal of Semiconductors, 2014, 35(11): 114002. doi: 10.1088/1674-4926/35/11/114002 |
| 6 |
A novel switched capacitor bandgap reference with a correlated double sampling structure Jianguang Chen, Yueguo Hao, Yuhua Cheng Journal of Semiconductors, 2013, 34(2): 025009. doi: 10.1088/1674-4926/34/2/025009 |
| 7 |
MOS Capacitance-Voltage Characteristics: V. Methods to Enhance the Trapping Capacitance Jie Binbin, Sah Chihtang Journal of Semiconductors, 2012, 33(2): 021001. doi: 10.1088/1674-4926/33/2/021001 |
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Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs Lü Weifeng, Sun Lingling Journal of Semiconductors, 2011, 32(8): 084003. doi: 10.1088/1674-4926/32/8/084003 |
| 9 |
A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference Yan Wei, Li Wenhong, Liu Ran Journal of Semiconductors, 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011 |
| 10 |
A 1.8–2.6 GHz CMOS VCO with switched capacitor array and switched inductor array Wang Xiaosong, Huang Shuilong, Chen Pufeng, Zhang Haiying Journal of Semiconductors, 2010, 31(2): 025001. doi: 10.1088/1674-4926/31/2/025001 |
| 11 |
Design of an LDO with capacitor multiplier Ying Jianhua, Huang Meng, Huang Yang Journal of Semiconductors, 2010, 31(7): 075010. doi: 10.1088/1674-4926/31/7/075010 |
| 12 |
Time-delayed feedback control of chaos in a GaAs/AlGaAs heterostructure Yang Gui, Zhao Xueting Journal of Semiconductors, 2010, 31(5): 052003. doi: 10.1088/1674-4926/31/5/052003 |
| 13 |
Low-power switched-capacitor delta-sigma modulator for EEG recording applications Chen Jin, Zhang Xu, Chen Hongda Journal of Semiconductors, 2010, 31(7): 075009. doi: 10.1088/1674-4926/31/7/075009 |
| 14 |
A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation Zhou Qianneng, Wang Yongsheng, Lai Fengchang Journal of Semiconductors, 2009, 30(4): 045006. doi: 10.1088/1674-4926/30/4/045006 |
| 15 |
Capacitance–voltage characterization of fully silicided gated MOS capacitor Wang Baomin, Ru Guoping, Jiang Yulong, Qu Xinping, Li Bingzong, et al. Journal of Semiconductors, 2009, 30(3): 034002. doi: 10.1088/1674-4926/30/3/034002 |
| 16 |
An offset-insensitive switched-capacitor bandgap reference with continuous output Zheng Peng, Yan Wei, Zhang Ke, Li Wenhong Journal of Semiconductors, 2009, 30(8): 085006. doi: 10.1088/1674-4926/30/8/085006 |
| 17 |
A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors Zhang Wancheng, Wu Nanjian Journal of Semiconductors, 2008, 29(4): 693-700. |
| 18 |
A Robust Low Power Chaos-Based Truly Random Number Generator Zhou Tong, Zhou Zhibo, Yu Mingyan, Ye Yizheng Journal of Semiconductors, 2008, 29(1): 69-74. |
| 19 |
MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, et al. Chinese Journal of Semiconductors , 2006, 27(3): 381-387. |
| 20 |
A Monolithically Integrated 12V/5V Switch- Capacitor DC- DC Converter Chinese Journal of Semiconductors , 2000, 21(6): 529-535. |
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Received: 19 August 2015 Revised: Online: Published: 01 December 2005
| Citation: |
Wang Yunfeng, Shen Haibin, Yan Xiaolang. Design of a Chaotic Random Number Generator[J]. Journal of Semiconductors, 2005, 26(12): 2433-2439.
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Wang Y F, Shen H B, Yan X L. Design of a Chaotic Random Number Generator[J]. Chin. J. Semicond., 2005, 26(12): 2433.
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