PAPERS
Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei and Niu Zhichuan
Abstract: GaSb thick layers were grown by molecular beam epitaxy on GaAs(100)substrates.High quality InAs/GaSb superlattices(SLs)with different InAs thicknesses were grown on GaSb buffer layers on GaAs substrates.The peak wavelengths of photoluminescence spectra at 10K are between 2~2.6μm.High-resolution transmission electron microscopy shows that the SLs have clear interface and integrated periods.
Key words: molecular beam epitaxy, GaAs, GaSb, InAs/GaSb superlattices
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Received: 18 August 2015 Revised: 05 February 2007 Online: Published: 01 July 2007
| Citation: |
Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei, Niu Zhichuan. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Journal of Semiconductors, 2007, 28(7): 1088-1091.
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Hao R T, Xu Y Q, Zhou Z Q, Ren Z W, Niu Z C. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Chin. J. Semicond., 2007, 28(7): 1088.
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