Control of GaN inverted pyramids growth on <i>c</i>-plane patterned sapphire substrates

Luming Yu; Xun Wang; Zhibiao Hao; Yi Luo; Changzheng Sun; Bing Xiong; Yanjun Han; Jian Wang; Hongtao Li; Lin Gan; Lai Wang

doi:10.1088/1674-4926/24010013

J. Semicond. > 2024, Volume 45 > Issue 6 > 062501

ARTICLES

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Luming Yu¹, Xun Wang¹, Zhibiao Hao^{1, 2}, Yi Luo^{1, 2}, Changzheng Sun^{1, 2}, Bing Xiong^{1, 2}, Yanjun Han^{1, 2}, Jian Wang^{1, 2}, Hongtao Li^{1, 2}, Lin Gan^{1, 2} and Lai Wang^{1, 2,}

+ Author Affiliations

Corresponding author: Lai Wang, wanglai@tsinghua.edu.cn

DOI: 10.1088/1674-4926/24010013

Abstract: Growth of gallium nitride (GaN) inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets. In this work, GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE). The influences of growth conditions on the surface morphology are experimentally studied and explained by Wulff constructions. The competition of growth rate among {0001}, {$ 10\bar{\text{1}}1 $}, and {$11 \bar{\text{2}}2 $} facets results in the various surface morphologies of GaN. A higher growth temperature of 985 °C and a lower Ⅴ/Ⅲ ratio of 25 can expand the area of {$ 11\bar{\text{2}}2 $} facets in GaN inverted pyramids. On the other hand, GaN inverted pyramids with almost pure {$10 \bar{\text{1}}1 $} facets are obtained by using a lower growth temperature of 930 °C, a higher Ⅴ/Ⅲ ratio of 100, and PSS with pattern arrangement perpendicular to the substrate primary flat.

Key words: inverted pyramids, GaN, MOVPE, crystal growth competition model

References

[1]	Cai X L, Du C L, Sun Z X, et al. Recent progress of physical failure analysis of GaN HEMTs. J Semicond, 2021, 42, 051801 doi: 10.1088/1674-4926/42/5/051801
[2]	Meneghini M, De Santi C, Abid I, et al. GaN-based power devices: Physics, reliability, and perspectives. J Appl Phys, 2021, 130, 181101 doi: 10.1063/5.0061354
[3]	Li Y Q, Wang X W, Zhang N, et al. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer. J Semicond, 2022, 43, 072801 doi: 10.1088/1674-4926/43/7/072801
[4]	Liang F, Yang J, Zhao D G, et al. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 H. J Semicond, 2019, 40, 022801 doi: 10.1088/1674-4926/40/2/022801
[5]	Liang F, Zhao D G, Liu Z S, et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 2021, 42, 112801 doi: 10.1088/1674-4926/42/11/112801
[6]	Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281, 955 doi: 10.1126/science.281.5379.956
[7]	Yang J, Zhao D G, Liu Z S, et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode. J Semicond, 2022, 43, 010501 doi: 10.1088/1674-4926/43/1/010501
[8]	Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402
[9]	Feezell D F, Schmidt M C, DenBaars S P, et al. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes. MRS Bull, 2009, 34, 318 doi: 10.1557/mrs2009.93
[10]	Speck J S, Chichibu S F. Nonpolar and semipolar group III nitride-based materials. MRS Bull, 2009, 34, 304 doi: 10.1557/mrs2009.91
[11]	Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes: Challenges and countermeasures. Laser Photonics Rev, 2013, 7, 408 doi: 10.1002/lpor.201200025
[12]	Xu C, Zheng C D, Wu X M, et al. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs. J Semicond, 2019, 40, 052801 doi: 10.1088/1674-4926/40/5/052801
[13]	Rajabi K, Wang J X, Jin J, et al. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design. Opt Express, 2018, 26, 24985 doi: 10.1364/OE.26.024985
[14]	Zhi T, Tao T, Liu X Y, et al. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN. J Semicond, 2021, 42, 122803 doi: 10.1088/1674-4926/42/12/122803
[15]	Peng R S, Xu S R, Fan X M, et al. Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells. J Semicond, 2023, 44, 042801 doi: 10.1088/1674-4926/44/4/042801
[16]	Wunderer T, Feneberg M, Lipski F, et al. Three-dimensional GaN for semipolar light emitters. Phys Status Solidi B, 2011, 248, 549 doi: 10.1002/pssb.201046352
[17]	Ward B L, Nam O H, Hartman J D, et al. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. J Appl Phys, 1998, 84, 5238 doi: 10.1063/1.368775
[18]	Scholz F, Wunderer T, Neubert B, et al. GaN-based light-emitting diodes on selectively grown semipolar crystal facets. MRS Bull, 2009, 34, 328 doi: 10.1557/mrs2009.95
[19]	Brubaker M D, Duff S M, Harvey T E, et al. Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si(111) substrates by molecular beam epitaxy. Cryst Growth Des, 2016, 16, 596 doi: 10.1021/acs.cgd.5b00910
[20]	Wang L, Wang X, Bertram F, et al. Color-tunable 3D InGaN/GaN multi-quantum-well light-emitting-diode based on microfacet emission and programmable driving power supply. Adv Opt Mater, 2021, 9, 2001400 doi: 10.1002/adom.202001400
[21]	Herring C. Some theorems on the free energies of crystal surfaces. Phys Rev, 1951, 82, 87 doi: 10.1103/PhysRev.82.87
[22]	Hiramatsu K, Nishiyama K, Motogaito A, et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Stat Sol (a), 1999, 176, 535 doi: 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I
[23]	Kung P, Sun C J, Saxler A, et al. Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates. J Appl Phys, 1994, 75, 4515 doi: 10.1063/1.355943

Fig. 1. (Color online) (a) Growth flow chart of GaN inverted pyramid surface structures on PSS. Low temperature buffer layer is grown as nucleation layer at 525 °C. High temperature buffer layer is grown at ~1000 °C to level GaN surface. Finally, GaN inverted pyramid structures are grown due to competition between crystal planes. (b) Cross-sectional SEM image of GaN inverted pyramids.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) SEM images of the surface morphology of 3D GaN with inverted pyramids grown under (a) 940 °C, (b) 950 °C, (c) 965 °C, and (d) 985 °C.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Schematic diagram of crystal growth competition based on Wulff construction. (a) When the angle between crystal planes is greater than 180°. (b) When the angle between crystal planes is less than 180°. (c) Schematic diagram of the relationship between temperature and growth rate of different facets.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) SEM images of samples with different Ⅴ/Ⅲ ratios at the same growth temperature (985 °C) and their corresponding growth competition models. NH₃ flowrate: (a, b) 4000 sccm, (c, d) 3000 sccm, (e, f) 2000 sccm, (g, h) 1000 sccm.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a, b) SEM images of sample H and its corresponding growth competition models. (c, d) SEM images of sample H based on rotated PSS and its corresponding growth competition models. The inserts show the arrangement of patterns on PSS/rotated PSS.

DownLoad: Full-Size Img PowerPoint

Table 1. Growth conditions of samples.

Sample	TMGa flow rate (sccm)	NH₃ flow rate (sccm)	Ⅴ/Ⅲ ratio	Temperature (°C)
A	40	4000	100	940
B	40	4000	100	950
C	40	4000	100	965
D	40	4000	100	985
E	40	3000	75	985
F	40	2000	50	985
G	40	1000	25	985
H	40	4000	100	930

DownLoad: CSV

[1]	Cai X L, Du C L, Sun Z X, et al. Recent progress of physical failure analysis of GaN HEMTs. J Semicond, 2021, 42, 051801 doi: 10.1088/1674-4926/42/5/051801
[2]	Meneghini M, De Santi C, Abid I, et al. GaN-based power devices: Physics, reliability, and perspectives. J Appl Phys, 2021, 130, 181101 doi: 10.1063/5.0061354
[3]	Li Y Q, Wang X W, Zhang N, et al. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer. J Semicond, 2022, 43, 072801 doi: 10.1088/1674-4926/43/7/072801
[4]	Liang F, Yang J, Zhao D G, et al. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 H. J Semicond, 2019, 40, 022801 doi: 10.1088/1674-4926/40/2/022801
[5]	Liang F, Zhao D G, Liu Z S, et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 2021, 42, 112801 doi: 10.1088/1674-4926/42/11/112801
[6]	Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281, 955 doi: 10.1126/science.281.5379.956
[7]	Yang J, Zhao D G, Liu Z S, et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode. J Semicond, 2022, 43, 010501 doi: 10.1088/1674-4926/43/1/010501
[8]	Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402
[9]	Feezell D F, Schmidt M C, DenBaars S P, et al. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes. MRS Bull, 2009, 34, 318 doi: 10.1557/mrs2009.93
[10]	Speck J S, Chichibu S F. Nonpolar and semipolar group III nitride-based materials. MRS Bull, 2009, 34, 304 doi: 10.1557/mrs2009.91
[11]	Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes: Challenges and countermeasures. Laser Photonics Rev, 2013, 7, 408 doi: 10.1002/lpor.201200025
[12]	Xu C, Zheng C D, Wu X M, et al. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs. J Semicond, 2019, 40, 052801 doi: 10.1088/1674-4926/40/5/052801
[13]	Rajabi K, Wang J X, Jin J, et al. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design. Opt Express, 2018, 26, 24985 doi: 10.1364/OE.26.024985
[14]	Zhi T, Tao T, Liu X Y, et al. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN. J Semicond, 2021, 42, 122803 doi: 10.1088/1674-4926/42/12/122803
[15]	Peng R S, Xu S R, Fan X M, et al. Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells. J Semicond, 2023, 44, 042801 doi: 10.1088/1674-4926/44/4/042801
[16]	Wunderer T, Feneberg M, Lipski F, et al. Three-dimensional GaN for semipolar light emitters. Phys Status Solidi B, 2011, 248, 549 doi: 10.1002/pssb.201046352
[17]	Ward B L, Nam O H, Hartman J D, et al. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. J Appl Phys, 1998, 84, 5238 doi: 10.1063/1.368775
[18]	Scholz F, Wunderer T, Neubert B, et al. GaN-based light-emitting diodes on selectively grown semipolar crystal facets. MRS Bull, 2009, 34, 328 doi: 10.1557/mrs2009.95
[19]	Brubaker M D, Duff S M, Harvey T E, et al. Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si(111) substrates by molecular beam epitaxy. Cryst Growth Des, 2016, 16, 596 doi: 10.1021/acs.cgd.5b00910
[20]	Wang L, Wang X, Bertram F, et al. Color-tunable 3D InGaN/GaN multi-quantum-well light-emitting-diode based on microfacet emission and programmable driving power supply. Adv Opt Mater, 2021, 9, 2001400 doi: 10.1002/adom.202001400
[21]	Herring C. Some theorems on the free energies of crystal surfaces. Phys Rev, 1951, 82, 87 doi: 10.1103/PhysRev.82.87
[22]	Hiramatsu K, Nishiyama K, Motogaito A, et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Stat Sol (a), 1999, 176, 535 doi: 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I
[23]	Kung P, Sun C J, Saxler A, et al. Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates. J Appl Phys, 1994, 75, 4515 doi: 10.1063/1.355943

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Received: 09 January 2024 Revised: 22 January 2024 Online: Accepted Manuscript: 01 March 2024Uncorrected proof: 06 March 2024Published: 15 June 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(6): 062501

Luming Yu, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Lai Wang. Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates[J]. Journal of Semiconductors, 2024, 45(6): 062501. doi: 10.1088/1674-4926/24010013 ****L M Yu, X Wang, Z B Hao, Y Luo, C Z Sun, B Xiong, Y J Han, J Wang, H T Li, L Gan, and L Wang, Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates[J]. J. Semicond., 2024, 45(6), 062501 doi: 10.1088/1674-4926/24010013

Citation:

L M Yu, X Wang, Z B Hao, Y Luo, C Z Sun, B Xiong, Y J Han, J Wang, H T Li, L Gan, and L Wang, Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates[J]. J. Semicond., 2024, 45(6), 062501 doi: 10.1088/1674-4926/24010013

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Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

DOI: 10.1088/1674-4926/24010013

Luming Yu¹,
Xun Wang¹,
Zhibiao Hao^{1, 2},
Yi Luo^{1, 2},
Changzheng Sun^{1, 2},
Bing Xiong^{1, 2},
Yanjun Han^{1, 2},
Jian Wang^{1, 2},
Hongtao Li^{1, 2},
Lin Gan^{1, 2},
Lai Wang^{1, 2,}

1.
Beijing National Research Center for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
2.
Center for Flexible Electronics Technology, Tsinghua University, Beijing 100084, China

More Information

Luming Yu got his bachelor’s degree in 2019 from Department of Electronic Engineering of Tsinghua University. Now he is a doctoral student at Tsinghua University under the supervision of Prof. Lai Wang. His research focuses on MOCVD growth, quantum dots and Micro-LEDs for display and communication
Lai Wang received his bachelor's degree and doctor's degree respectively, both in the Department of Electronic Engineering of Tsinghua University in 2003 and 2008, respectively. His research interests include optoelectronic materials and devices based on wide-gap semiconductors, Micro-LEDs for display and communication, blue and green laser diodes, and in-sensor computing devices. He has published more than 150 SCI papers. In 2011, he won the second prize of National Science and Technology Progress Award. In 2022, he was supported by the National Science Fund for Distinguished Young Scholars
Corresponding author: wanglai@tsinghua.edu.cn
Received Date: 2024-01-09
Revised Date: 2024-01-22

Available Online: 2024-03-01

Abstract

Abstract

Growth of gallium nitride (GaN) inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets. In this work, GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE). The influences of growth conditions on the surface morphology are experimentally studied and explained by Wulff constructions. The competition of growth rate among {0001}, {$ 10\bar{\text{1}}1 $}, and {$11 \bar{\text{2}}2 $} facets results in the various surface morphologies of GaN. A higher growth temperature of 985 °C and a lower Ⅴ/Ⅲ ratio of 25 can expand the area of {$ 11\bar{\text{2}}2 $} facets in GaN inverted pyramids. On the other hand, GaN inverted pyramids with almost pure {$10 \bar{\text{1}}1 $} facets are obtained by using a lower growth temperature of 930 °C, a higher Ⅴ/Ⅲ ratio of 100, and PSS with pattern arrangement perpendicular to the substrate primary flat.
- inverted pyramids,
- GaN,
- MOVPE,
- crystal growth competition model

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References(23)

References

[1]	Cai X L, Du C L, Sun Z X, et al. Recent progress of physical failure analysis of GaN HEMTs. J Semicond, 2021, 42, 051801 doi: 10.1088/1674-4926/42/5/051801
[2]	Meneghini M, De Santi C, Abid I, et al. GaN-based power devices: Physics, reliability, and perspectives. J Appl Phys, 2021, 130, 181101 doi: 10.1063/5.0061354
[3]	Li Y Q, Wang X W, Zhang N, et al. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer. J Semicond, 2022, 43, 072801 doi: 10.1088/1674-4926/43/7/072801
[4]	Liang F, Yang J, Zhao D G, et al. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 H. J Semicond, 2019, 40, 022801 doi: 10.1088/1674-4926/40/2/022801
[5]	Liang F, Zhao D G, Liu Z S, et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 2021, 42, 112801 doi: 10.1088/1674-4926/42/11/112801
[6]	Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281, 955 doi: 10.1126/science.281.5379.956
[7]	Yang J, Zhao D G, Liu Z S, et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode. J Semicond, 2022, 43, 010501 doi: 10.1088/1674-4926/43/1/010501
[8]	Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402
[9]	Feezell D F, Schmidt M C, DenBaars S P, et al. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes. MRS Bull, 2009, 34, 318 doi: 10.1557/mrs2009.93
[10]	Speck J S, Chichibu S F. Nonpolar and semipolar group III nitride-based materials. MRS Bull, 2009, 34, 304 doi: 10.1557/mrs2009.91
[11]	Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes: Challenges and countermeasures. Laser Photonics Rev, 2013, 7, 408 doi: 10.1002/lpor.201200025
[12]	Xu C, Zheng C D, Wu X M, et al. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs. J Semicond, 2019, 40, 052801 doi: 10.1088/1674-4926/40/5/052801
[13]	Rajabi K, Wang J X, Jin J, et al. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design. Opt Express, 2018, 26, 24985 doi: 10.1364/OE.26.024985
[14]	Zhi T, Tao T, Liu X Y, et al. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN. J Semicond, 2021, 42, 122803 doi: 10.1088/1674-4926/42/12/122803
[15]	Peng R S, Xu S R, Fan X M, et al. Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells. J Semicond, 2023, 44, 042801 doi: 10.1088/1674-4926/44/4/042801
[16]	Wunderer T, Feneberg M, Lipski F, et al. Three-dimensional GaN for semipolar light emitters. Phys Status Solidi B, 2011, 248, 549 doi: 10.1002/pssb.201046352
[17]	Ward B L, Nam O H, Hartman J D, et al. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. J Appl Phys, 1998, 84, 5238 doi: 10.1063/1.368775
[18]	Scholz F, Wunderer T, Neubert B, et al. GaN-based light-emitting diodes on selectively grown semipolar crystal facets. MRS Bull, 2009, 34, 328 doi: 10.1557/mrs2009.95
[19]	Brubaker M D, Duff S M, Harvey T E, et al. Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si(111) substrates by molecular beam epitaxy. Cryst Growth Des, 2016, 16, 596 doi: 10.1021/acs.cgd.5b00910
[20]	Wang L, Wang X, Bertram F, et al. Color-tunable 3D InGaN/GaN multi-quantum-well light-emitting-diode based on microfacet emission and programmable driving power supply. Adv Opt Mater, 2021, 9, 2001400 doi: 10.1002/adom.202001400
[21]	Herring C. Some theorems on the free energies of crystal surfaces. Phys Rev, 1951, 82, 87 doi: 10.1103/PhysRev.82.87
[22]	Hiramatsu K, Nishiyama K, Motogaito A, et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Stat Sol (a), 1999, 176, 535 doi: 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I
[23]	Kung P, Sun C J, Saxler A, et al. Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates. J Appl Phys, 1994, 75, 4515 doi: 10.1063/1.355943

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

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Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

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