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J. Semicond. > 2024, Volume 45 > Issue 9 > 092502

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10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu and Shaoqing Wang

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 Corresponding author: Haifeng Chen, chenhaifeng@xupt.edu.cn

DOI: 10.1088/1674-4926/24030005

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Abstract: A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D*) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.

Key words: Ga2O3solar-blind ultravioletphotodetectorarrayphoto-to-dark current ratio

Solar-blind ultraviolet (UV) detector plays an important role in medical sterilization, missile tracking, hydrogen detection, fire warning, ozone hole detection, non-line-of-sight communication, power grid security monitoring and space exploration[14]. Due to the ultra-wide bandgap of 4.4−4.9 eV[5, 6], Ga2O3 has the absorption edge of near 250−280 nm which just located in the solar-blind UV range[7, 8]. Moreover, its absorption coefficient is as high as 105 cm−1, so it is one kind of ideal natural solar-blind UV detection materials[9, 10].

Ga2O3 solar-blind UV detector is mainly based on metal−semiconductor−metal (MSM) type[11], Schottky type[1214], heterojunction type[15, 16], and p−n junction type[17], among which MSM photodetectors have the simple structure and excellent performance. Nowadays, the Ga2O3 detector arrays based on the MSM photodetectors and its imaging are developing rapidly. In 2021, Xie et al. prepared an 8 × 8 photodetector array based on Ga2O3 film grown by pattern technique, showing good uniformity and repeatability[18]. Their patterned growth of Ga2O3 provides a new idea for the development of photodetector arrays. In 2022, Liu et al. used metal−organic chemical vapor deposion (MOCVD) to grow Ga2O3 films and prepared a 4 × 4 photodetector array. With the photo-to-dark current ratio (PDCR) of 6 × 107 and responsivity (R) of 634.15 A/W, the 16 units of the photodetector array exhibit good uniformity[19]. In 2022, Ding et al. used inkjet printing technology to prepare a 4 × 4 photodetector array. Because of the high designability of inkjet printing, separated Ga2O3 film arrays can be well designed without the traditional imaging process, and all pixel units have good uniformity[20]. In 2023, Shen et al. prepared an 8 × 8 photodetector array, which showed uniform responsivity and low chromatic aberration of graphic imaging at 5 V[21]. In 2022, Hou et al. prepared a 10 × 10 photodetector array based on Ga2O3 film grown by defect and doping engineering, and reported the high temperature imaging under the conditions of 12 V and 280 °C for the first time[22]. In 2023, Shen et al. prepared a 16 × 16 photodetector array based on Ga2O3 film grown by MOCVD, and further output photo-imaging with "0" and "1" signals[23]. These photodetector arrays mentioned above almost adopt the single metal layer photolithography process. For the development of the arrays to a larger scale, the area of a single pixel unit and the wire arrangement should be a big challenge. Obviously, the single metal layer process cannot meet this challenge well. Therefore, the study of detector array based on multilayer metal process or crossbar structure should be very important and significant.

In this paper, a 10 × 10 MSM solar-blind UV detector array with double-layer wire structure is prepared based on Ga2O3 film grown by atomic layer deposition (ALD), which is designed by structural optimization with row/column-selective metal wires, and isolated at the row-column intersections by Al2O3 material. The detection characteristics of the unit photodetector at low bias and different light intensity (P) were investigated, and the response uniformity and imaging performance of the whole array at different P, bias and high temperature are analyzed.

At first, the sapphire substrate was cleaned by ultrasonic, using acetone, anhydrous ethanol and deionized water for 10 min in turn. Next, Ga2O3 film with 120 nm thickness was grown on the sapphire substrate by ALD. Subsequently, Ga2O3 film was annealed for 10 min under nitrogen atmosphere and the surface morphology of the samples was observed by characterization technique. Next, the first photolithography and evaporation of metal (Ti/Au (100/50 nm)), was used to prepare the first metal layer (right side of the interdigital electrodes) as well as the column wires in the photodetector array. Afterwards, an Al2O3 film was grown as an insulating layer by ALD and etched it. Then the second photolithography and evaporation of metal (Ti/Au (100/50 nm)), was used to prepare the second metal layer (left side of the interdigital electrodes) and row wires. Fig. 1 illustrates this whole flow of process. Finally, the array was rapidly annealed to improve its Ohmic contact performance. The length, width and spacing of the interdigital electrodes are 300, 50 and 50 μm, respectively. The characteristic of the photodetector array was measured by Keysight B1505A semiconductor analyzer. A handheld UV mercury lamp with a wavelength of 254 nm was used in this process for light response measurements. During the measurement, P depends on the distance between the UV lamp and the samples. The distance was controlled by a lamp holder table, the height of which can be adjustable. To ensure stable and accurate P, a 254 nm-UV light intensity meter was used to measure the actual P.

Fig. 1.  (Color online) The flow chart of 10 × 10 β-Ga2O3 solar-blind UV detector array preparation.

Fig. 2(a) shows the X-ray diffraction (XRD) pattern of Ga2O3 film grown on sapphire substrate by ALD technique and rapidly annealed at 700 °C. Besides strong sapphire substrate diffraction peak, the diffraction peaks can be observed at 18.95°, 38.62°, and 59.36°, which correspond to the (−201), (−402), and (−603) crystallographic planes of β-Ga2O3, respectively (PDF card: No. 43−1012). The three planes are parallel to each other and belong to the same (−201) crystal plane family, indicating that the film is β-Ga2O3 film with a single growth orientation and good quality. Fig. 2(b) shows the UV−visible absorption spectrum of the grown β-Ga2O3, measured in the wavelength range (190−750 nm). Noted that the film has a very low absorption rate of only 10% in the visible range (400−750 nm) and a significant UV absorption in the solar-blind UV band (200−280 nm). The (αhν)2 curve is derived, as shown in the inset of Fig. 2(b). Then the film’s band gap Eg is calculated to be 4.88 eV based on the Tauc method which is as follows[24].

Fig. 2.  (Color online) (a) XRD pattern of Ga2O3 after anneal process. (b) UV−visible absorption spectrum of the β-Ga2O3 film grown on sapphire substrate. The inset shows Eg of film. (c) The real image of prepared array and local magnification diagram.
(αhν)2=C(hνEg),
(1)

where α is the absorption coefficient, C is a constant, h is Planck constant, ν is the frequency of the photon. Fig. 2(c) shows the image of prepared array, the size of which is 1.86 cm × 2.08 cm and the enlarged view in details, respectively. It can be seen that there is no metal adhesion between the interdigital electrodes and the electrode edges are clear.

For detector, the photo current (Iphoto) comes from the physical mechanism of photo-genereated electron−hole pair when the UV light irradiates it, as shown in Fig. 3(a). In order to test the photoelectric performance of the device, the individual pixel units were firstly tested one by one under the conditions of dark and solar-blind UV illumination with P of 1800 μW/cm2. The experimental results are shown in Fig. 3(b). At the bias of 3 V, the dark current (Idark) of the device is as low as about 18.5 pA, and Iphoto can reach 10.4 μA. The PDCR is more than or close to 106. This maybe result from the good quality of grown Ga2O3, which can suppress the generation of Idark and produce a large number of excess photo-generated electron−holes under 254 nm UV light. The high PDCR means that the device has high sensitivity and can detect extremely weak UV light, which is also the basis for the array to work under extreme conditions. Figs. 3(c) and 3(d) present the distribution of Idark and Iphoto, carried out by Gaussian distribution statistics, respectively. It can be seen that each pixel unit has highly similar Idark and Iphoto, indicating that all pixel units in the array have good uniformity.

Fig. 3.  (Color online) (a) Energy band diagram of detector after UV illumination. (b) Experimental Idark and Iphoto of all detectors in the array under the P of 1800 μW/cm2. (c) and (d) Gaussian distribution of Idark and Iphoto extracted from (b), respectively.

Figs. 4(a) and 4(b) show the linear and semi-logarithmic Iphoto curves measured under 254 nm UV light with different P. It can be seen that Iphoto increases with increasing P from 400 to 2945 μW/cm2. Generally, Iphoto has a power law relationship with P[21]. Fig. 4(c) shows that Iphoto also follows this power law and IphotoP0.50, indicating that the device has a good regularity as P changes. To further explore the device’s performance under different P, R, external quantum efficiency (EQE) and detectivity (D*) were extracted from Fig. 4(a) and Fig. 3(b). R reflects the ability of the device converting incident light into Iphoto[25] and is expressed as:

Fig. 4.  (Color online) (a) and (b) Iphoto curves of different P in linear and semi-logarithmic coordinates, respectively. (c) Iphoto distribution diagram under different P and their fitting line. (d) R and EQE at different P. The inset shows D* of different P.
R=IphotoIdarkP×S,
(2)

where S is the effective area. The higher R is, the more photo-generated electron−hole pairs under a certain irradiation, and the better device performance. According to Eq. (2), R is inversely proportional to P. So R decreases with the increase of P, as shown in Fig. 4(d). When P = 1800 μW/cm2, R can reach 4.28 A/W at 3 V. EQE is the ratio of incident photons to photo-generated electron−hole pairs. It is an important index to measure the photon utilization rate of the detector[25]. EQE is as follows:

EQE=hcRqλ,
(3)

where q is the electron’s charge, c is the velocity of incident light, λ is the wavelength of UV light, and R is the responsivity. According to Eq. (3), EQE of prepared device is calculated as 2.1 × 103%. EQE is proportional to R according to Eq. (3) and so it also decreases as increasing P in Fig. 4(d). The high R and EQE maybe related to the photo-generated carriers that can participate in the transport in the active layer fast and effectively[26]. D* is proposed on the basis of noise equivalent power in order to represent device performance more accurately[27, 28].

D=R2qIdark/S.
(4)

Based on Eq. (4), the curve of D* with the change of P was extracted, as shown in the inset of Fig. 4(d). D* decreases with decreasing R and then decreases with increasing P, and the maximum D* is 1.5 × 1014 Jones at 400 μW/cm2. Although this extracted curve of D* changes with P, according to the exact definition, D* should be independent of P, so we only use D* corresponding to the lowest P to represent the detectivity of the device.

Fig. 5(a) shows the current−time (IT) curves of the device at different bias under P of 1800 μW/cm2. It can be seen that when the applied bias is changed, the device has good time response characteristics to different applied bias. In order to further explore the response speed of the device, there are two parameters: rising time (τr) and decay time (τd)[29]. τr is the time of the Iphoto increasing from 10% to 90% of the maximum value. On the contrary, τd is the time of Iphoto decreasing from 90% to 10% of its maximum value. As shown in Fig. 5(b), a cycle was extracted from the IT curve of Fig. 5(a) at 5 V. The device has a fast response speed, which can be seen from that, τr and τd of the device calculated based on the experimental data are 74 and 130 ms, respectively. Noted that τr and τd are relatively long. This long response time should be related with the quality of the material[30]. Fig. 5(c) shows the IT curve of the device under different P at 5 V. As increasing P, Iphoto increases. This is attributed to that the greater P is, the more photo-generated carriers are generated, and the greater Iphoto is. Subsequently, the IT curve under multiple switching cycles was tested. It can be seen from Fig. 5(d) that the device has high light response characteristics and maintains nearly consistent Iphoto after multiple cycles, indicating that the device has good reproducibility and robustness.

Fig. 5.  (Color online) (a) Under P of 1800 μW/cm2, IT curves at different bias. (b) Time response characteristics of the device at 5 V. (c) IT characteristic curves at different P at 5 V. (d) Experimental IT curves for multiple cycle.

Fig. 6(a) presents the imaging system for array, including UV light source, photomask, data collection system and temperature-controlled heater. Figs. 6(b)−6(d) show the experimental imaging results of the array under different P at room temperature (RT) at 5 V. It can be seen that the Iphoto in the array decreases slightly with the decrease of P, but it can still be clearly imaged, which indicates that the array also has a sensitive response to weak light. Figs. 6(e) and 6(f) show the imaging results when P is 1800 μW/cm2 and the voltage is 3 and 1 V at RT, respectively. The array imaging effect is good under the ultra-low voltage. This array can be applied in low-voltage circuits, which greatly reduces the circuit power consumption. Noted that Idark, Iphoto, PDCR and R increase as bias increases under P of 1800 μW/cm2, as shown in Figs. 6(g) and 6(h).

Fig. 6.  (Color online) (a) Schematic of imaging system for the solar-blind UV detector array. (b), (c), and (d) Imaging results under RT when the bias voltage is 5 V and P is 1800, 1000, and 700 μW/cm2, respectively. (e) and (f) Imaging results at 3 and 1 V under RT when P is 1800 μW/cm2, respectively. (g) and (h) Iphoto and Idark, PDCR and R at different bias voltage under P of 1800 μW/cm2, respectively.

Table 1 summarizes the key performance parameters of different photodetectors and photodetector arrays at RT reported in the literature. The performance of the photodetector array prepared in this work is at a high level.

Table 1.  Comparison of the performance parameters of the photodetectors at RT.
Structure Array Metal layer number Bias
(V)
Idark (A) PDCR R
(A/W)
EQE
(%)
D*
(Jones)
τr /τd Ref.
β-Ga2O3/sapphire MSM No 1 20 7 × 10−10 ~105 22000 1.07 × 107 1.1 × 1016 / [31]
α-Ga2O3/ZnO heterojunction No 1 20 2.17 × 10−9 21 521 2.49 / 1.98 × 1014 147 ns [15]
β-Ga2O3/sapphire MSM No 1 20 1.4 × 10−11 105 150 7.4 × 104 / 1.3 s [32]
β-Ga2O3/sapphire MSM No 1 15 / 9.3 × 104 1.26 616 2.5 × 1012 0.58 s/0.06 s [33]
β-Ga2O3/sapphire MSM No 1 10 1.06 × 10−11 1.6 × 103 18.23 / / 0.062 s/0.05 s [34]
β-Ga2O3/sapphire MSM No 1 5 2.19 × 10−8 9.43 1.45 / / 0.58 s/1.2 s [35]
β-Ga2O3/SiO2/Si MSM 8 × 8 1 10 6.2 × 10−13 6.13 × 104 0.72 / 4.18 × 1011 1.1 s/0.03 s [18]
β-Ga2O3/sapphire MSM 4 × 4 1 10 4.0 × 10−10 105 12.4
(45 V)
6006
(45 V)
1.9 × 1012 / [36]
β-Ga2O3/sapphire MSM 4 × 4 1 5 10−11 105 0.893 444 / 305 ms/251 ms [37]
β-Ga2O3/sapphire MSM 4 × 5 1 10 / 2.78 × 105 459.38 2.24 × 105 1.33 × 1015 1.149 s/0.45 s [38]
Al/Al2O3/Ga2O3 7 × 7 1 10 1.6 × 10−11 102 295 1.4 × 105 1.7 × 1015 1.7 s/26.8 s [39]
α-Ga2O3/PET MSM 3D 1 15 1.7 × 10−10 >102 8.9 4450 / / [40]
β-Ga2O3/sapphire MSM 16 × 16 1 5 10−11 3.4 × 105 61.3 3 × 104 5.2 × 1014 3 ms/35 ms
(3 V)
[23]
β-Ga2O3/sapphire MSM 10 × 10 2 3 1.85 × 10−11 5.5 × 105 4.28 2.1 × 103 1.5 × 1014 100 ms/150 ms This work
5 2.4 × 10−11 5.6 × 105 5.5 2.7 × 103 2.3 × 1014 74 ms/130 ms
DownLoad: CSV  | Show Table

Further, Figs. 7(a) and 7(b) present the imaging results of 5 and 1 V under different temperatures, respectively. All of these images are very clear even at ultra-low operating voltage of 1 V. Their PDCRs of 5 and 1 V under the given temperatures are similar to each other, which changes from 105 to 101. With the increase of temperature, both of Iphoto and Idark show an increasing trend in Fig. 7(c). Idark of the array at 50, 80, 110, and 150 °C are significantly greater than that at RT, but Iphoto are almost as same as that at RT. Noted that these PDCRs are about 102 in Fig. 7(d), indicating that the array’s performance remains stable when the temperature located in the range of 50−150 °C, suggesting that the array has excellent temperature stability. For the cases of over 200 °C, Iphoto and Idark of the array increase significantly, and the performance begins to deteriorate as temperature increases. However, even if PDCR worsened under high temperature conditions, clear images can still be obtained at 300 °C. In Fig. 7(d), under 5 V, PDCR and R can reach 1.65 × 101 and 34.4 A/W, respectively. And in this case EQE is as high as 1.7 × 104%. Noted that even at 300 °C, PDCR still reaches 1.70 × 101 at 1 V. In order to study the performance of the array at 300 °C, the uniformity diagram is shown in Fig. 7(e) using the gray image processing technology. The results show that the gray image is very clear. Table 2 compares the performance parameters of Ga2O3 photodetectors at maximum temperature reported by far with this work. The devices prepared in this work still have excellent performance at a high temperature of 300 °C.

Fig. 7.  (Color online) Under P of 1800 μW/cm2, (a) and (b) imaging results at RT, 50, 80, 110, 150, 200, 250, and 300 °C at 5 and 1 V, respectively. (c) Iphoto and Idark under different temperatures at 1 and 5 V. (d) PDCR and R under different temperatures at 1 and 5 V. (e) Image results at RT and 300 °C when applied bias is 1 and 5 V by using the gray image processing technology.
Table 2.  Comparison of the performance parameters of the photodetectors at high temperature.
Structure Metal layer
number
Bias (V) Idark (A) PDCR R (A/W) Operating
temperature (°C)
Ref.
β-Ga2O3/sapphire MSM 1 20 ≤10−10 ≥97 ~10−2 200 [41]
β-Ga2O3/sapphire MSM 1 10 6.7 × 10−9 ~10 / 200 [42]
α-GaOx/sapphire MSM 1 12 ~10−10 7.1 × 103 8 280 [22]
β-Ga2O3/sapphire MSM 1 10 >10−6 2.3 0.74 250 [43]
β-Ga2O3/sapphire MSM 2 5 5.4 × 10−6 1.65 × 101 34.4 300 This
work
1 9.82 × 10−7 1.70 × 101 6.45 300
DownLoad: CSV  | Show Table

In this paper, β-Ga2O3 film was grown on sapphire substrate by ALD. A 10 × 10 solar-blind UV detector array with MSM structure was prepared by two photolithography and evaporation, and etch. The uniformity of pixel units in the array and the photoelectric performance of single detection units were investigated. Under 3 V, the detector has ultra-low Idark (1.85 × 10−11 A), high R (4.28 A/W), high EQE (2.1 × 103%) and high D* (1.5 × 1014 Jones), and the PDCR reaches 5.5 × 105. In addition, the array has good time response characteristics, the response time is only 100/150 ms. The imaging characteristics of the array at different temperatures are investigated by building an imaging system, and the array presents clear imaging at a high temperature of 300 °C. When the applied voltage is 5 V, PDCR is 1.65 × 101, R is as high as 34.4 A/W, and EQE reaches 1.7 × 104%, showing excellent temperature stability and high temperature resistance. There are some beneficial explorations for the application of Ga2O3 solar-blind UV detector array in this work. Different from the single-layer wire structure used widely, the double-layer wire structure is adopted through structural optimization in the detector. And at ultra-low voltage, the array presents high imaging performance, which could reduce the circuit power consumption effectively. Meanwhile, this array still realized a good imaging under very high temperature of 300 °C. The experimental results show that the double-layer array structure has good characteristics. Furthermore, based on this structure, photodetector array should be easy to expand to the larger scale for high pixel density. Of course, there should be the detector uniformity and crosstalk issues as the array becomes too large. However, in turn, seeking solutions to these issues should also drive the development of Ga2O3 image sensor.

This work was supported by Natural Science Basic Research Program of Shaanxi Province of China (No. 2023-JC-YB-574) and National Natural Science Foundation of China (Grant No. 62304178).



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Wang Q L, Chen J, Huang P, et al. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors. Appl Surf Sci, 2019, 489, 101 doi: 10.1016/j.apsusc.2019.05.328
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Chen Y C, Lu Y J, Liu Q, et al. Ga2O3 photodetector arrays for solar-blind imaging. J Mater Chem C, 2019, 7, 2557 doi: 10.1039/C8TC05251D
[37]
Peng Y K, Zhang Y, Chen Z W, et al. Arrays of solar-blind ultraviolet photodetector based on β-Ga2O3 epitaxial thin films. IEEE Photonics Technol Lett, 2018, 30, 993 doi: 10.1109/LPT.2018.2826560
[38]
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[39]
Chen Y C, Yang X, Zhang Y, et al. Ultra-sensitive flexible Ga2O3 solar-blind photodetector array realized via ultra-thin absorbing medium. Nano Res, 2021, 15, 3711 doi: 10.1007/s12274-021-3942-6
[40]
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[41]
Zhou H T, Cong L J, Ma J G, et al. High-performance high-temperature solar-blind photodetector based on polycrystalline Ga2O3 film. J Alloys Compd, 2020, 847, 156536 doi: 10.1016/j.jallcom.2020.156536
[42]
Xu Y, Chen X, Zhou D, et al. Carrier transport and gain mechanisms in β-Ga2O3-based metal-semiconductor-metal solar-blind Schottky photodetectors. IEEE Trans Electron Devices, 2019, 66, 2276 doi: 10.1109/TED.2019.2906906
[43]
Tak B R, Garg M, Dewan S, et al. High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors. J Appl Phys, 2019, 125, 144501 doi: 10.1063/1.5088532
Fig. 1.  (Color online) The flow chart of 10 × 10 β-Ga2O3 solar-blind UV detector array preparation.

Fig. 2.  (Color online) (a) XRD pattern of Ga2O3 after anneal process. (b) UV−visible absorption spectrum of the β-Ga2O3 film grown on sapphire substrate. The inset shows Eg of film. (c) The real image of prepared array and local magnification diagram.

Fig. 3.  (Color online) (a) Energy band diagram of detector after UV illumination. (b) Experimental Idark and Iphoto of all detectors in the array under the P of 1800 μW/cm2. (c) and (d) Gaussian distribution of Idark and Iphoto extracted from (b), respectively.

Fig. 4.  (Color online) (a) and (b) Iphoto curves of different P in linear and semi-logarithmic coordinates, respectively. (c) Iphoto distribution diagram under different P and their fitting line. (d) R and EQE at different P. The inset shows D* of different P.

Fig. 5.  (Color online) (a) Under P of 1800 μW/cm2, IT curves at different bias. (b) Time response characteristics of the device at 5 V. (c) IT characteristic curves at different P at 5 V. (d) Experimental IT curves for multiple cycle.

Fig. 6.  (Color online) (a) Schematic of imaging system for the solar-blind UV detector array. (b), (c), and (d) Imaging results under RT when the bias voltage is 5 V and P is 1800, 1000, and 700 μW/cm2, respectively. (e) and (f) Imaging results at 3 and 1 V under RT when P is 1800 μW/cm2, respectively. (g) and (h) Iphoto and Idark, PDCR and R at different bias voltage under P of 1800 μW/cm2, respectively.

Fig. 7.  (Color online) Under P of 1800 μW/cm2, (a) and (b) imaging results at RT, 50, 80, 110, 150, 200, 250, and 300 °C at 5 and 1 V, respectively. (c) Iphoto and Idark under different temperatures at 1 and 5 V. (d) PDCR and R under different temperatures at 1 and 5 V. (e) Image results at RT and 300 °C when applied bias is 1 and 5 V by using the gray image processing technology.

Table 1.   Comparison of the performance parameters of the photodetectors at RT.

Structure Array Metal layer number Bias
(V)
Idark (A) PDCR R
(A/W)
EQE
(%)
D*
(Jones)
τr /τd Ref.
β-Ga2O3/sapphire MSM No 1 20 7 × 10−10 ~105 22000 1.07 × 107 1.1 × 1016 / [31]
α-Ga2O3/ZnO heterojunction No 1 20 2.17 × 10−9 21 521 2.49 / 1.98 × 1014 147 ns [15]
β-Ga2O3/sapphire MSM No 1 20 1.4 × 10−11 105 150 7.4 × 104 / 1.3 s [32]
β-Ga2O3/sapphire MSM No 1 15 / 9.3 × 104 1.26 616 2.5 × 1012 0.58 s/0.06 s [33]
β-Ga2O3/sapphire MSM No 1 10 1.06 × 10−11 1.6 × 103 18.23 / / 0.062 s/0.05 s [34]
β-Ga2O3/sapphire MSM No 1 5 2.19 × 10−8 9.43 1.45 / / 0.58 s/1.2 s [35]
β-Ga2O3/SiO2/Si MSM 8 × 8 1 10 6.2 × 10−13 6.13 × 104 0.72 / 4.18 × 1011 1.1 s/0.03 s [18]
β-Ga2O3/sapphire MSM 4 × 4 1 10 4.0 × 10−10 105 12.4
(45 V)
6006
(45 V)
1.9 × 1012 / [36]
β-Ga2O3/sapphire MSM 4 × 4 1 5 10−11 105 0.893 444 / 305 ms/251 ms [37]
β-Ga2O3/sapphire MSM 4 × 5 1 10 / 2.78 × 105 459.38 2.24 × 105 1.33 × 1015 1.149 s/0.45 s [38]
Al/Al2O3/Ga2O3 7 × 7 1 10 1.6 × 10−11 102 295 1.4 × 105 1.7 × 1015 1.7 s/26.8 s [39]
α-Ga2O3/PET MSM 3D 1 15 1.7 × 10−10 >102 8.9 4450 / / [40]
β-Ga2O3/sapphire MSM 16 × 16 1 5 10−11 3.4 × 105 61.3 3 × 104 5.2 × 1014 3 ms/35 ms
(3 V)
[23]
β-Ga2O3/sapphire MSM 10 × 10 2 3 1.85 × 10−11 5.5 × 105 4.28 2.1 × 103 1.5 × 1014 100 ms/150 ms This work
5 2.4 × 10−11 5.6 × 105 5.5 2.7 × 103 2.3 × 1014 74 ms/130 ms
DownLoad: CSV

Table 2.   Comparison of the performance parameters of the photodetectors at high temperature.

Structure Metal layer
number
Bias (V) Idark (A) PDCR R (A/W) Operating
temperature (°C)
Ref.
β-Ga2O3/sapphire MSM 1 20 ≤10−10 ≥97 ~10−2 200 [41]
β-Ga2O3/sapphire MSM 1 10 6.7 × 10−9 ~10 / 200 [42]
α-GaOx/sapphire MSM 1 12 ~10−10 7.1 × 103 8 280 [22]
β-Ga2O3/sapphire MSM 1 10 >10−6 2.3 0.74 250 [43]
β-Ga2O3/sapphire MSM 2 5 5.4 × 10−6 1.65 × 101 34.4 300 This
work
1 9.82 × 10−7 1.70 × 101 6.45 300
DownLoad: CSV
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    Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang. 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. Journal of Semiconductors, 2024, 45(9): 092502. doi: 10.1088/1674-4926/24030005
    H F Chen, Z H Liu, Y X Zhang, F L Jia, C L Wu, Q Lu, X T Liu, and S Q Wang, 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. J. Semicond., 2024, 45(9), 092502 doi: 10.1088/1674-4926/24030005
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    Received: 06 March 2024 Revised: 16 May 2024 Online: Accepted Manuscript: 04 June 2024Uncorrected proof: 04 June 2024Published: 15 September 2024

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      Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang. 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. Journal of Semiconductors, 2024, 45(9): 092502. doi: 10.1088/1674-4926/24030005 ****H F Chen, Z H Liu, Y X Zhang, F L Jia, C L Wu, Q Lu, X T Liu, and S Q Wang, 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. J. Semicond., 2024, 45(9), 092502 doi: 10.1088/1674-4926/24030005
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      Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang. 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. Journal of Semiconductors, 2024, 45(9): 092502. doi: 10.1088/1674-4926/24030005 ****
      H F Chen, Z H Liu, Y X Zhang, F L Jia, C L Wu, Q Lu, X T Liu, and S Q Wang, 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. J. Semicond., 2024, 45(9), 092502 doi: 10.1088/1674-4926/24030005

      10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

      DOI: 10.1088/1674-4926/24030005
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      • Haifeng Chen received the Ph.D. degree from Xidian University in 2008. He is currently a Professor at Xi’an University of Posts and Telecommunications. His research interests focus on Ga2O3 material and devices
      • Zhanhang Liu received her BS degree from Xi’an University of Posts and Telecommunications in 2022. She is currently a Master’s student at Xi’an University of Posts and Telecommunications. Her research focuses on Ga2O3 photodetectors
      • Yixin Zhang received her BS degree from Xianmen University of Technology in 2023. She is currently a Master's student at Xi'an University of Posts and Telecommunications. Her research focuses on Ga2O3 devices
      • Corresponding author: chenhaifeng@xupt.edu.cn
      • Received Date: 2024-03-06
      • Revised Date: 2024-05-16
      • Available Online: 2024-06-04

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