J. Semicond. > 2024, Volume 45 > Issue 9 > 092502
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ARTICLES

10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu and Shaoqing Wang

+ Author Affiliations

 Corresponding author: Haifeng Chen, chenhaifeng@xupt.edu.cn

DOI: 10.1088/1674-4926/24030005

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Abstract: A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D*) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.

Key words: Ga2O3, solar-blind ultraviolet, photodetector, array, photo-to-dark current ratio



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[2]
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[3]
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[21]
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[22]
Hou X H, Zhao X L, Zhang Y, et al. High-performance harsh-environment-resistant GaOx solar-blind photodetectors via defect and doping engineering. Adv Mater, 2022, 34, 2106923 doi: 10.1002/adma.202106923
[23]
Shen G H, Liu Z, Tan C K, et al. Solar-blind UV communication based on sensitive β-Ga2O3 photoconductive detector array. Appl Phys Lett, 2023, 123, 041103 doi: 10.1063/5.0161521
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Prabakar K, Venkatachalam S, Jeyachandran Y L, et al. Microstructure, Raman and optical studies on Cd0.6Zn0. 4Te thin films. Mater Sci Eng B, 2004, 107, 99 doi: 10.1016/j.mseb.2003.10.017
[25]
Zheng W, Huang F, Zheng R S, et al. Low-dimensional structure vacuum-ultraviolet-sensitive (λ < 200 nm) photodetector with fast-response speed based on high-quality AlN micro/nanowire. Adv Mater, 2015, 27, 3921 doi: 10.1002/adma.201500268
[26]
Shen G H, Liu Z, Zhang M L, et al. 16 × 16 solar-blind UV detector based on β-Ga2O3 sensors. IEEE Electron Device Lett, 2023, 44, 1140 doi: 10.1109/LED.2023.3272909
[27]
Qin Y, Li L H, Zhao X L, et al. Metal-semiconductor-metal ε-Ga2O3 solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism. Acs Photonics, 2020, 7, 812 doi: 10.1021/acsphotonics.9b01727
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[30]
He H L, Wu C, Hu H Z, et al. Bandgap engineering and oxygen vacancy defect electroactivity inhibition in highly crystalline N-alloyed Ga2O3 films through plasma-enhanced technology. J Phys Chem Lett, 2023, 14, 6444 doi: 10.1021/acs.jpclett.3c01368
[31]
Xu Y, Cheng Y L, Li Z, et al. Ultrahigh-performance solar-blind photodetectors based on high quality heteroepitaxial single crystalline β-Ga2O3 film grown by vacuumfree, low-cost mist chemical vapor deposition. Adv Mater Technol, 2021, 6, 2001296 doi: 10.1002/admt.202001296
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Xu Y, An Z Y, Zhang L X, et al. Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method. Opt Mater Express, 2018, 8, 2941 doi: 10.1364/OME.8.002941
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Hu Z G, Cheng Q, Zhang T, et al. Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates. J Lumin, 2023, 255, 119596 doi: 10.1016/j.jlumin.2022.119596
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Peng Y K, Zhang Y, Chen Z W, et al. Arrays of solar-blind ultraviolet photodetector based on β-Ga2O3 epitaxial thin films. IEEE Photonics Technol Lett, 2018, 30, 993 doi: 10.1109/LPT.2018.2826560
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[40]
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[41]
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Fig. 1.  (Color online) The flow chart of 10 × 10 β-Ga2O3 solar-blind UV detector array preparation.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) XRD pattern of Ga2O3 after anneal process. (b) UV−visible absorption spectrum of the β-Ga2O3 film grown on sapphire substrate. The inset shows Eg of film. (c) The real image of prepared array and local magnification diagram.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) Energy band diagram of detector after UV illumination. (b) Experimental Idark and Iphoto of all detectors in the array under the P of 1800 μW/cm2. (c) and (d) Gaussian distribution of Idark and Iphoto extracted from (b), respectively.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) and (b) Iphoto curves of different P in linear and semi-logarithmic coordinates, respectively. (c) Iphoto distribution diagram under different P and their fitting line. (d) R and EQE at different P. The inset shows D* of different P.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) (a) Under P of 1800 μW/cm2, I−T curves at different bias. (b) Time response characteristics of the device at 5 V. (c) I−T characteristic curves at different P at 5 V. (d) Experimental I−T curves for multiple cycle.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) (a) Schematic of imaging system for the solar-blind UV detector array. (b), (c), and (d) Imaging results under RT when the bias voltage is 5 V and P is 1800, 1000, and 700 μW/cm2, respectively. (e) and (f) Imaging results at 3 and 1 V under RT when P is 1800 μW/cm2, respectively. (g) and (h) Iphoto and Idark, PDCR and R at different bias voltage under P of 1800 μW/cm2, respectively.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) Under P of 1800 μW/cm2, (a) and (b) imaging results at RT, 50, 80, 110, 150, 200, 250, and 300 °C at 5 and 1 V, respectively. (c) Iphoto and Idark under different temperatures at 1 and 5 V. (d) PDCR and R under different temperatures at 1 and 5 V. (e) Image results at RT and 300 °C when applied bias is 1 and 5 V by using the gray image processing technology.

DownLoad: Full-Size Img PowerPoint

Table 1.   Comparison of the performance parameters of the photodetectors at RT.

Structure Array Metal layer number Bias
(V)		 Idark (A) PDCR R
(A/W)		 EQE
(%)		 D*
(Jones)		 τr /τd Ref.
β-Ga2O3/sapphire MSM No 1 20 7 × 10−10 ~105 22000 1.07 × 107 1.1 × 1016 / [31]
α-Ga2O3/ZnO heterojunction No 1 20 2.17 × 10−9 21 521 2.49 / 1.98 × 1014 147 ns [15]
β-Ga2O3/sapphire MSM No 1 20 1.4 × 10−11 105 150 7.4 × 104 / 1.3 s [32]
β-Ga2O3/sapphire MSM No 1 15 / 9.3 × 104 1.26 616 2.5 × 1012 0.58 s/0.06 s [33]
β-Ga2O3/sapphire MSM No 1 10 1.06 × 10−11 1.6 × 103 18.23 / / 0.062 s/0.05 s [34]
β-Ga2O3/sapphire MSM No 1 5 2.19 × 10−8 9.43 1.45 / / 0.58 s/1.2 s [35]
β-Ga2O3/SiO2/Si MSM 8 × 8 1 10 6.2 × 10−13 6.13 × 104 0.72 / 4.18 × 1011 1.1 s/0.03 s [18]
β-Ga2O3/sapphire MSM 4 × 4 1 10 4.0 × 10−10 105 12.4
(45 V)		 6006
(45 V)		 1.9 × 1012 / [36]
β-Ga2O3/sapphire MSM 4 × 4 1 5 10−11 105 0.893 444 / 305 ms/251 ms [37]
β-Ga2O3/sapphire MSM 4 × 5 1 10 / 2.78 × 105 459.38 2.24 × 105 1.33 × 1015 1.149 s/0.45 s [38]
Al/Al2O3/Ga2O3 7 × 7 1 10 1.6 × 10−11 102 295 1.4 × 105 1.7 × 1015 1.7 s/26.8 s [39]
α-Ga2O3/PET MSM 3D 1 15 1.7 × 10−10 >102 8.9 4450 / / [40]
β-Ga2O3/sapphire MSM 16 × 16 1 5 10−11 3.4 × 105 61.3 3 × 104 5.2 × 1014 3 ms/35 ms
(3 V)		 [23]
β-Ga2O3/sapphire MSM 10 × 10 2 3 1.85 × 10−11 5.5 × 105 4.28 2.1 × 103 1.5 × 1014 100 ms/150 ms This work
5 2.4 × 10−11 5.6 × 105 5.5 2.7 × 103 2.3 × 1014 74 ms/130 ms
DownLoad: CSV

Table 2.   Comparison of the performance parameters of the photodetectors at high temperature.

Structure Metal layer
number		 Bias (V) Idark (A) PDCR R (A/W) Operating
temperature (°C)		 Ref.
β-Ga2O3/sapphire MSM 1 20 ≤10−10 ≥97 ~10−2 200 [41]
β-Ga2O3/sapphire MSM 1 10 6.7 × 10−9 ~10 / 200 [42]
α-GaOx/sapphire MSM 1 12 ~10−10 7.1 × 103 8 280 [22]
β-Ga2O3/sapphire MSM 1 10 >10−6 2.3 0.74 250 [43]
β-Ga2O3/sapphire MSM 2 5 5.4 × 10−6 1.65 × 101 34.4 300 This
work
1 9.82 × 10−7 1.70 × 101 6.45 300
DownLoad: CSV
[1]
Liang H L, Han Z Y, Mei Z X. Recent progress of deep ultraviolet photodetectors using amorphous gallium oxide thin films. Phys Status Solidi A, 2021, 218, 2000339 doi: 10.1002/pssa.202000339
[2]
Xu J J, Zheng W, Huang F. Gallium oxide solar-blind ultraviolet photodetectors: A review. J Mater Chem C, 2019, 7, 8753 doi: 10.1039/C9TC02055A
[3]
Wei T C, Tsai D S, Ravadgar P, et al. See-through Ga2O3 solar-blind photodetectors for use in harsh environments. IEEE J Sel Top Quantum Electron, 2014, 20, 112 doi: 10.1109/JSTQE.2014.2321517
[4]
Yang G, Jang S, Ren F, et al. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. ACS Appl Mater Interfaces, 2017, 9, 40471 doi: 10.1021/acsami.7b13881
[5]
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[6]
Kaur D, Vashishtha P, Khan S A, et al. Phase dependent radiation hardness and performance analysis of amorphous and polycrystalline Ga2O3 solar-blind photodetector against swift heavy ion irradiation. J Appl Phys, 2020, 128, 065902 doi: 10.1063/5.0019786
[7]
Pearton S J, Yang J C, Cary P H, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[8]
Roy R, Hill V G, Osborn E F. Polymorphism of Ga2O3 and the system Ga2O3−H2O. J Am Chem Soc, 1952, 74, 719 doi: 10.1021/ja01123a039
[9]
Orita M, Ohta H, Hirano M, et al. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Appl Phys Lett, 2000, 77, 4166 doi: 10.1063/1.1330559
[10]
Kaur D, Kumar M. A strategic review on gallium oxide based deep-ultraviolet photodetectors: Recent progress and future prospects. Adv opt mater, 2021, 9, 2002160 doi: 10.1002/adom.202002160
[11]
Qian L X, Gu Z, Huang X, et al. Comprehensively improved performance of β-Ga2O3 solar-blind photodetector enabled by a homojunction with unique passivation mechanisms. ACS Appl Mater Interfaces, 2021, 13, 40837 doi: 10.1021/acsami.1c12615
[12]
Liu Z, Zhi Y S, Zhang S H, et al. Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors. Sci China Technol Sci, 2021, 64, 59 doi: 10.1007/s11431-020-1701-2
[13]
Wu D, Zhao Z H, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Res, 2021, 14, 1973 doi: 10.1007/s12274-021-3346-7
[14]
Qin Y, Sun H D, Long S B, et al. High-performance metal-organic chemical vapor deposition grown ε-Ga2O3 solar-blind photodetector with asymmetric Schottky electrodes. IEEE Electron Device Lett, 2019, 40, 1475 doi: 10.1109/LED.2019.2932382
[15]
Wang H, Ma J, Cong L, et al. Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction. Mater Today Phys, 2021, 20, 100464 doi: 10.1016/j.mtphys.2021.100464
[16]
Wu C, He H L, Hu H Z, et al. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3. J Semicond, 2023, 44, 072807 doi: 10.1088/1674-4926/44/7/072807
[17]
Qu Y Y, Wu Z P, Ai M L, et al. Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes. J Alloys Compd, 2016, 680, 247 doi: 10.1016/j.jallcom.2016.04.134
[18]
Xie C, Lu X T, Liang Y, et al. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application. J Mater Sci Technol, 2021, 72, 189 doi: 10.1016/j.jmst.2020.09.015
[19]
Liu Z, Zhi Y S, Zhang M L, et al. A 4 × 4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response. Chinese Phys B, 2022, 31, 088503 doi: 10.1088/1674-1056/ac597d
[20]
Ding M F, Liang K, Yu S J, et al. Aqueous-printed Ga2O3 films for high-performance flexible and heat-resistant deep ultraviolet photodetector and array. Adv Opt Mater, 2022, 10, 2200512 doi: 10.1002/adom.202200512
[21]
Shen G H, Liu Z, Tang K, et al. High responsivity and fast response 8 × 8 β-Ga2O3 solar-blind ultraviolet imaging photodetector array. Sci China Technol Sci, 2023, 66, 3259 doi: 10.1007/s11431-022-2404-8
[22]
Hou X H, Zhao X L, Zhang Y, et al. High-performance harsh-environment-resistant GaOx solar-blind photodetectors via defect and doping engineering. Adv Mater, 2022, 34, 2106923 doi: 10.1002/adma.202106923
[23]
Shen G H, Liu Z, Tan C K, et al. Solar-blind UV communication based on sensitive β-Ga2O3 photoconductive detector array. Appl Phys Lett, 2023, 123, 041103 doi: 10.1063/5.0161521
[24]
Prabakar K, Venkatachalam S, Jeyachandran Y L, et al. Microstructure, Raman and optical studies on Cd0.6Zn0. 4Te thin films. Mater Sci Eng B, 2004, 107, 99 doi: 10.1016/j.mseb.2003.10.017
[25]
Zheng W, Huang F, Zheng R S, et al. Low-dimensional structure vacuum-ultraviolet-sensitive (λ < 200 nm) photodetector with fast-response speed based on high-quality AlN micro/nanowire. Adv Mater, 2015, 27, 3921 doi: 10.1002/adma.201500268
[26]
Shen G H, Liu Z, Zhang M L, et al. 16 × 16 solar-blind UV detector based on β-Ga2O3 sensors. IEEE Electron Device Lett, 2023, 44, 1140 doi: 10.1109/LED.2023.3272909
[27]
Qin Y, Li L H, Zhao X L, et al. Metal-semiconductor-metal ε-Ga2O3 solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism. Acs Photonics, 2020, 7, 812 doi: 10.1021/acsphotonics.9b01727
[28]
Hou X H, Zou Y N, Ding M F, et al. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications. J Phys D: Appl Phys, 2020, 54, 043001 doi: 10.1088/1361-6463/abbb45
[29]
Zhang Q Y, Li N, Zhang T, et al. Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering. Nat commun, 2023, 14, 418 doi: 10.1038/s41467-023-36117-8
[30]
He H L, Wu C, Hu H Z, et al. Bandgap engineering and oxygen vacancy defect electroactivity inhibition in highly crystalline N-alloyed Ga2O3 films through plasma-enhanced technology. J Phys Chem Lett, 2023, 14, 6444 doi: 10.1021/acs.jpclett.3c01368
[31]
Xu Y, Cheng Y L, Li Z, et al. Ultrahigh-performance solar-blind photodetectors based on high quality heteroepitaxial single crystalline β-Ga2O3 film grown by vacuumfree, low-cost mist chemical vapor deposition. Adv Mater Technol, 2021, 6, 2001296 doi: 10.1002/admt.202001296
[32]
Xu Y, An Z Y, Zhang L X, et al. Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method. Opt Mater Express, 2018, 8, 2941 doi: 10.1364/OME.8.002941
[33]
Hu Z G, Cheng Q, Zhang T, et al. Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates. J Lumin, 2023, 255, 119596 doi: 10.1016/j.jlumin.2022.119596
[34]
Wang Q L, Chen J, Huang P, et al. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors. Appl Surf Sci, 2019, 489, 101 doi: 10.1016/j.apsusc.2019.05.328
[35]
Oh S, Jung Y, Mastro M A, et al. Development of solar-blind photodetectors based on Si-implanted β-Ga2O3. Opt Express, 2015, 23, 28300 doi: 10.1364/OE.23.028300
[36]
Chen Y C, Lu Y J, Liu Q, et al. Ga2O3 photodetector arrays for solar-blind imaging. J Mater Chem C, 2019, 7, 2557 doi: 10.1039/C8TC05251D
[37]
Peng Y K, Zhang Y, Chen Z W, et al. Arrays of solar-blind ultraviolet photodetector based on β-Ga2O3 epitaxial thin films. IEEE Photonics Technol Lett, 2018, 30, 993 doi: 10.1109/LPT.2018.2826560
[38]
Zheng Q Q, Chen L R, Li X D, et al. Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga2O3 films for solar-blind imaging. Sci China Technol Sci, 2023, 66, 2707 doi: 10.1007/s11431-023-2416-6
[39]
Chen Y C, Yang X, Zhang Y, et al. Ultra-sensitive flexible Ga2O3 solar-blind photodetector array realized via ultra-thin absorbing medium. Nano Res, 2021, 15, 3711 doi: 10.1007/s12274-021-3942-6
[40]
Chen Y, Lu Y J, Liao M Y, et al. 3D solar-blind Ga2O3 photodetector array realized via origami method. Adv Funct Mater, 2019, 29, 1906040 doi: 10.1002/adfm.201906040
[41]
Zhou H T, Cong L J, Ma J G, et al. High-performance high-temperature solar-blind photodetector based on polycrystalline Ga2O3 film. J Alloys Compd, 2020, 847, 156536 doi: 10.1016/j.jallcom.2020.156536
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    Received: 06 March 2024 Revised: 16 May 2024 Online: Accepted Manuscript: 04 June 2024Uncorrected proof: 04 June 2024Published: 15 September 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(9): 092502
      Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang. 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. Journal of Semiconductors, 2024, 45(9): 092502. doi: 10.1088/1674-4926/24030005 ****H F Chen, Z H Liu, Y X Zhang, F L Jia, C L Wu, Q Lu, X T Liu, and S Q Wang, 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. J. Semicond., 2024, 45(9), 092502 doi: 10.1088/1674-4926/24030005
      Citation:
      Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang. 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. Journal of Semiconductors, 2024, 45(9): 092502. doi: 10.1088/1674-4926/24030005 ****
      H F Chen, Z H Liu, Y X Zhang, F L Jia, C L Wu, Q Lu, X T Liu, and S Q Wang, 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic[J]. J. Semicond., 2024, 45(9), 092502 doi: 10.1088/1674-4926/24030005
      shu

      10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic

      DOI: 10.1088/1674-4926/24030005

      • Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China

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      • Haifeng Chen received the Ph.D. degree from Xidian University in 2008. He is currently a Professor at Xi’an University of Posts and Telecommunications. His research interests focus on Ga2O3 material and devices
      • Zhanhang Liu received her BS degree from Xi’an University of Posts and Telecommunications in 2022. She is currently a Master’s student at Xi’an University of Posts and Telecommunications. Her research focuses on Ga2O3 photodetectors
      • Yixin Zhang received her BS degree from Xianmen University of Technology in 2023. She is currently a Master's student at Xi'an University of Posts and Telecommunications. Her research focuses on Ga2O3 devices
      • Corresponding author: chenhaifeng@xupt.edu.cn
      • Received Date: 2024-03-06
      • Revised Date: 2024-05-16
        • Available Online: 2024-06-04

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