J. Semicond. > 2024, Volume 45 > Issue 12 > 121701
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Semiconductor-based direct current triboelectric nanogenerators and its application

Xin Shi1, 2, Weiguo Wang1, Jun Wang2, , Jian Li3 and Huamin Chen2,

+ Author Affiliations

 Corresponding author: Jun Wang, wangjun2@mju.edu.cn; Huamin Chen, chenhuamin@mju.edu.cn

DOI: 10.1088/1674-4926/24080021

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Abstract: Triboelectric nanogenerator (TENG) utilizing tribovoltaic effect can directly produce direct current with high energy conversion efficiency, which expands their application in semiconductor devices and self-powered systems. This work comprehensively summarizes the recent developments in semiconductor-based direct current TENGs (SDC-TENGs), which hold significant promise for DC energy harvesting technologies and semiconductor systems. First, the tribovoltaic effect is elucidated, and SDC-TENGs are categorized into six types based on different triboelectric structures: metal−semiconductor (M−S), metal−insulator−semiconductor (M−I−S), semiconductor−semiconductor (S−S), semiconductor−insulator−semiconductor (S−I−S), liquid−semiconductor (L−S), and metal/semiconductor−liquid−semiconductor (M/S−L−S) contact devices. Subsequent sections detail the operational mechanisms, strengths, and limitations of each category. Additionally, this paper outlines the enhancement mechanisms of SDC-TENGs providing guidance and recommendations for performance improvement. The conclusion highlights potential application scenarios for various types of SDC-TENGs, outlining the prospective benefits and challenges. SDC-TENG technology is poised to drive revolutionary developments in semiconductor devices and self-powered systems.

Key words: triboelectric nanogenerator, tribovoltaic effect, work function, semiconductor, heterojunction



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Fig. 1.  (Color online) The four operating modes of traditional TENG and six operating modes of SDC-TENG[16, 17]. (Reproduced with permission. Copyright 2014, The Royal Society of Chemistry. Reproduced with permission. Copyright 2021，Elsevier Ltd).

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Fig. 2.  (Color online) (a) Diagram of the MoS2-based SDC-TENG[26]. (Reproduced with permission. Copyright 2019, American Chemical Society). (b) Energy band illustration of P-Si/N-Si[23]. (Reproduced with permission. Copyright 2019, Elsevier Ltd). (c) Dynamic perovskite/hole transport layer heterojunction diagram and I−V curve of dynamic sliding contact between FAPbl3 perovskite and spiral layer[29]. (Reproduced with permission. Copyright 2021, The Royal Society of Chemistry). (d) Band diagram of CsFAMA/PEDOT:PSS before contact, after contact, and sliding[30]. (Reproduced with permission. Copyright 2022, Elsevier Ltd). (e) Schematic diagrams of the circuit to measure the electrical characteristics of the SDC-TENG[31].

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Fig. 3.  (Color online) (a) Energy band diagram of the M−S junction in equilibrium states[32]. (Reproduced with permission. Copyright 2020, WILEY-VCH Verlag GmbH & Co. KGaA). (b) Schematic diagram of the windmill DC-TENG for wind energy harvesting[33]. (Reproduced with permission. Copyright 2023, Elsevier Ltd). (c) Structural and electric output performance of FTVNG[34]. (Reproduced with permission. Copyright 2023, WILEY-VCH GmbH). (d) Structure illustration of metal/perovskite-based DC-TENG[35]. (Reproduced with permission. Copyright 2022, WILEY-VCH GmbH). (e) Schematics of the Ti/D-GaN HEMT DC-TENG. Demonstration of powering a digital watch[36]. (Reproduced with permission. Copyright 2023, AIP Publishing).

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Fig. 4.  (Color online) (a) Diagram illustration of C-AFM performance[37]. (Reproduced with permission. Copyright 2018, Elsevier). (b) Schematics of the KPFM study of triboelectric charge accumulation[41]. (Reproduced with permission. Copyright 2019, The Royal Society of Chemistry).

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Fig. 5.  (Color online) (a) Schematics of the dynamic black phosphorus/Si junction[25]. (Reproduced with permission. Copyright 2019, Science and Technology Review Publishing House). (b) Band diagram of p-type Si/MoS2 junction[26]. (Reproduced with permission. Copyright 2019, American Chemical Society).

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Fig. 6.  (Color online) (a) Friction voltage test and setting speed of the external circuit when droplets are in static contact[48]. (Reproduced with permission. Copyright 2020, Elsevier Ltd). (b) Working mechanism of F-LIG-based DEG[49]. (Reproduced with permission. Copyright 2021, Wiley-VCH GmbH).

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Fig. 7.  (Color online) (a) The schematic of a dynamic liquid−semiconductor junction generator[54]. (Reproduced with permission. Copyright 2021, Science and Technology Review Publishing House). (b) Schematic of the operating principle of SLSDC-TVNG[56]. (Reproduced with permission. Copyright 2024, AIP Publishing).

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Fig. 8.  (Color online) (a) AFM topographic image of three adjacent MoS2 crystal grains[66]. (Reproduced with permission. Copyright 2018, Macmillan Publishers Limited). (b) Schematic illustration of the tribovoltaic effect[77]. (Reproduced with permission. Copyright 2022, American Chemical Society).

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Fig. 9.  (Color online) (a) Vibrational energy harvesting for TENG[82]. (Reproduced with permission. Copyright 2013, WILEY-VCH Verlag GmbH). (b) Water wave energy harvesting TENG[83]. (Reproduced with permission. Copyright 2014, American Chemical Society). (c) Raindrop energy harvesting TENG[84]. (Reproduced with permission. Copyright 2014, Elsevier). (d) Harvesting mechanical energy to power electronic devices[85]. (Reproduced with permission. Copyright 2021, Elsevier). (e) Wireless environment monitoring network based on wind power generation[86]. (Reproduced with permission. Copyright 2023, John Wiley & Sons, Ltd). (f) Walking kinetic energy collection friction power generation device[87, 88]. (Reproduced with permission. Copyright 2015, Nature Research. Reproduced with permission. Copyright 2020, Research). (g) Wind power generation TENG based on independent layer array[89]. (Reproduced with permission. Copyright 2016, Wiley-VCH GmbH). (h) DC power generation mode body sliding energy collection[90, 91]. (Reproduced with permission. Copyright 2019, The American Chemical Society. Reproduced with permission. Copyright 2016, Wiley). (i) Single fiber wiper friction nanogenerator for body kinetic energy harvesting, including skin core coating, spiral winding[92−94]. (Reproduced with permission. Copyright 2020, Springer Nature. Reproduced with permission. Copyright 2022, American Chemical Society. Reproduced with permission. Copyright 2022, American Chemical Society).

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Table 1.   A summary of materials and output performance of various SDC-TENGs.

Materials Contact area
(cm2)		 Sliding velocity
(cm∙s−1)		 Voltage
(V)		 Current
(μA)		 Power density
(W∙m−2)		 Ref.
Carbon aerogel /Si/SiO2 0.785 5 2 15 / [24]
Al/CsPbBr3 / 70 3.69 5.73 / [35]
PEDOT:PSS/Al 2.5 700 0.6 3.6 / [33]
GaN-based heterostructure/
titanium		 2.4 100 45.5 26 2.32 [36]
Si/stainless steel / 40 0.045 3.5 146.4 [34]
Black phosphorus /AlN/Si 0.5 × 10–5 8 6.1 / 201 [25]
Si/Al2O3/Si 0.1 × 10–4 10 1.3 21.4 33.6 [61]
Al/Si/silicon oxide / / 0.4 5 / [37]
PEDOT:PSS/CsFAMA / / 0.8 / 0.18 × 10–4 [30]
MoS2/mental/semiconductor/
insulator		 0.017 / 0.3 0.6 / [26]
Si/Si 1 5 0.35 0.089 [23]
GaN/Si 0.64 12 130 21.5 2.8 [31]
Perovskite/CTL 1 / 1.3 1200 / [29]
Al/TiO2/Ti / 2.5 0.52 / / [62]
Droplet/FEP/F-LIG / / 198 268.9 47.5 [49]
Polytetrafluoroethylene/ferrofluid / / 0.98 / / [63]
WS2/Si / / 4.2 4.2 5.09 × 10–6 [56]
Cu−Si/Metal / 10 0.3 4000 1.6 × 10–3 [64]
Si/water/Si / 15 0.3 0.64 / [54]
Water/Si / 5 0.4 0.3 / [65]
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    Received: 19 August 2024 Revised: 20 September 2024 Online: Accepted Manuscript: 18 October 2024Uncorrected proof: 12 November 2024Published: 15 December 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(12): 121701
      Xin Shi, Weiguo Wang, Jun Wang, Jian Li, Huamin Chen. Semiconductor-based direct current triboelectric nanogenerators and its application[J]. Journal of Semiconductors, 2024, 45(12): 121701. doi: 10.1088/1674-4926/24080021 ****X Shi, W G Wang, J Wang, J Li, and H M Chen, Semiconductor-based direct current triboelectric nanogenerators and its application[J]. J. Semicond., 2024, 45(12), 121701 doi: 10.1088/1674-4926/24080021
      Citation:
      Xin Shi, Weiguo Wang, Jun Wang, Jian Li, Huamin Chen. Semiconductor-based direct current triboelectric nanogenerators and its application[J]. Journal of Semiconductors, 2024, 45(12): 121701. doi: 10.1088/1674-4926/24080021 ****
      X Shi, W G Wang, J Wang, J Li, and H M Chen, Semiconductor-based direct current triboelectric nanogenerators and its application[J]. J. Semicond., 2024, 45(12), 121701 doi: 10.1088/1674-4926/24080021
      shu

      Semiconductor-based direct current triboelectric nanogenerators and its application

      DOI: 10.1088/1674-4926/24080021
      • 1.

        School of Materials Science and Engineering, Fujian University of Technology, Fuzhou 350118, China

      • 2.

        College of Materials and Chemical Engineering, Minjiang University, Fuzhou 350108, China

      • 3.

        Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      More Information
      • Xin Shi is currently studying at Fujian University of Technology and co-trained at Minjiang University. His research focuses on semiconductor-based triboelectric nanogenerator
      • Jun Wang received Ph. D degree from the University of Science and Technology of China (USTC). He is now a professor at Minjiang University. His research interest includes the chemical and physical properties of micro-nano structure, magnetic sensing devices and microfabrication
      • Huamin Chen received his B. S. degree from Fudan University in 2014. He received his Ph. D degree from Institute of Semiconductors, Chinese Academy of Sciences in 2019. He is now an associate professor at Minjiang University. His research interest includes smart sensing Materials, stretchable and flexible electronics, energy harvesting devices, and microfabrication
      • Corresponding author: wangjun2@mju.edu.cn; chenhuamin@mju.edu.cn
      • Received Date: 2024-08-19
      • Revised Date: 2024-09-20
        • Available Online: 2024-10-18

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