Erratum: “Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser” [<i>J. Semicond.</i>, 2023, 44(10), 102302]

Tianjiang He; Suping Liu; Wei Li; Li Zhong; Xiaoyu Ma; Cong Xiong; Nan Lin; Zhennuo Wang

doi:10.1088/1674-4926/24119701

Article Navigation > Journal of Semiconductors > 2024 > 45(11): 119701

Tianjiang He, Suping Liu, Wei Li, Li Zhong, Xiaoyu Ma, Cong Xiong, Nan Lin, Zhennuo Wang. Erratum: “Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser” [J. Semicond., 2023, 44(10), 102302][J]. Journal of Semiconductors, 2024, 45(11): 119701. doi: 10.1088/1674-4926/24119701 ****T J He, S P Liu, W Li, L Zhong, X Y Ma, C Xiong, N Lin, and Z N Wang, Erratum: “Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser” [J. Semicond., 2023, 44(10), 102302][J]. J. Semicond., 2024, 45(11), 119701 doi: 10.1088/1674-4926/24119701

Citation:

T J He, S P Liu, W Li, L Zhong, X Y Ma, C Xiong, N Lin, and Z N Wang, Erratum: “Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser” [J. Semicond., 2023, 44(10), 102302][J]. J. Semicond., 2024, 45(11), 119701 doi: 10.1088/1674-4926/24119701

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Erratum: “Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser” [J. Semicond., 2023, 44(10), 102302]

DOI: 10.1088/1674-4926/24119701

Tianjiang He^{1, 2},
Suping Liu^1,,
Wei Li^{1, 2},
Li Zhong^{1, 2},
Xiaoyu Ma^{1, 2},
Cong Xiong¹,
Nan Lin^{1, 2},
Zhennuo Wang^{1, 2}

1.
National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

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