Fig. 1.
(Color online) The structure of PMOS transistor.
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2025
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Jun Huang, Bojin Pan, Hang bao, Qiuyue Huo, Renxiong Li, Qi Ding, Yutuo Guo, Yu Wang, Kunqin He, Yaxin Liu, Ziyi Zeng, Ning Ning, Lulu Peng. A semiconductor radiation dosimeter fabricated in 8-inch process[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/24120027
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J Huang, B J Pan, H bao, Q Y Huo, R X Li, Q Ding, Y T Guo, Y Wang, K Q He, Y X Liu, Z Y Zeng, N Ning, and L L Peng, A semiconductor radiation dosimeter fabricated in 8-inch process[J]. J. Semicond., 2025, 46(8), 082302 doi: 10.1088/1674-4926/24120027
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A semiconductor radiation dosimeter fabricated in 8-inch process
DOI: 10.1088/1674-4926/24120027
CSTR: 32376.14.1674-4926.24120027
More Information-
Jun Huang received his doctoral degree from University of Electronic Science and Technology of China, Chengdu, China, in 2019. He is currently a senior engineer of United Microelectronics Center Co., Ltd, Chongqing, China. His works include power devices and driver IC -
Lulu Peng received his Ph.D. degree in the Hong Kong University of Science and Technology, Hong Kong, China, in 2014. After that, he worked as a Member of Technical Staff in Globalfoundries, Singapore until 2022. He is currently a Chief Expert in the United Microelectronics Center of CETC, Chongqing, China. His current research focuses on Si-based integrated power devices and process for system-on-chip (SOC) - Corresponding author: lulu.peng@cumec.cn
- Revised Date: 2025-02-28 Available Online: 2025-03-27
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Abstract
The RADFET radiation dosimeter is a type of radiation detector based on the total dose effects of the PMOS transistor. The RADFET chip was fabricated in CUMEC 8-inch process with a six-layer photomask. The chip including two identical PMOS transistors, occupies a size of 610 µm×610 µm. Each PMOS has a W/L ratio of 300 µm/50 µm, and a 400 nm thick gate oxide, which is formed by a dry-wet-dry oxygen process. The wet oxygen-formed gate oxide with more traps can capture more holes during irradiation, thus significantly changing the PMOS threshold voltage. Pre-irradiation measurement results from ten test chips show that the initial average voltage of the PMOS is 1.961 V with a dispersion of 5.7%. The irradiation experiment is conducted in a cobalt source facility with a dose rate of 50 rad(Si)/s. During irradiation, a constant current source circuit of 10 µA was connected to monitoring the shift in threshold voltage under different total dose. When the total dose is 100 krad(Si), the shift in threshold voltage was approximately 1.37 V, which demonstrates that an excellent radiation function was achieved.-
Keywords:
- RADFET,
- PMOS,
- thick gate oxide,
- total dose effect,
- radiation detection
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References
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