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Study of a novel SiC-based light initiated multi-gate semiconductor switch

Chongbiao Luan1, , Jianqiang Yuan1, Hongwei Liu1, Longfei Xiao2, Huiru Sha2, Le Xu1, Yang He1, Lingyun Wang1, Hongtao Li1 and Yupeng Huang1

+ Author Affiliations

 Corresponding author: Chongbiao Luan, luanchongbiao@163.com

DOI: 10.1088/1674-4926/25020033CSTR: 32376.14.1674-4926.25020033

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Abstract: To optimize turn on velocity of the SiC LIMS, we proposed a new structure for the LIMS that incorporates an optimized n+ layer and a multi-light triggered electrode design for the anode. The chip size is 5.5 mm × 5.5 mm in dimension. The experiment results indicate that the saturation laser energy required to trigger the prepared SiC LIMS has been decreased from 1.8 mJ to 40 μJ, with the forward blocking voltage of the prepared SiC LIMSs capable of withstanding over 7000 V. The leakage current is about 0.3 μA at room temperature, and the output current density achieves 4.25 kA/cm2 (with di/dt larger than 20 kA/μs).

Key words: SiC, Light Initiated Multi-gate Semiconductor Switch, leakage current, pulsed power system



[1]
Rocabert J, Luna A, Blaabjerg F, et al. Control of power converters in AC microgrids. IEEE Transactions on Power Electronics, 2012, 27(11), 4734 doi: 10.1109/TPEL.2012.2199334
[2]
Luan C B, Liu H W, Fu J B, et al. Study of a Si-based light initiated multi-gate semiconductor switch for high temperatures. Scientific Reports, 2022, 12, 15508 doi: 10.1038/s41598-022-19767-4
[3]
Yin J C, Bai Y J, Shi K, et al. Direct triggering LTT with monolithic structure. Journal of the Electron Devices Society, 2022, 10, 843
[4]
Nakao H, Nakagoshi Y, Hatano M, et al. Test of a LTT thyristor valve for next generation 500 kV HVDC transmission system. IEEE Power Engineering Society Winter Meeting, 2000, 2932
[5]
Rumyantsev S L, Levinshtein M E, Shur M S, et al. Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors. Semicond. Sci. Technol., 2014, 28(12), 125017
[6]
Mojab A, Mazumder S K, Cheng L, et al. , 15-kV single-bias all-optical ETO thyristor. IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, 313
[7]
Yin J C, Bai Y J, Cao J, et al. Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors. Semiconductor Science and Technology, 2023, 38(7), 75011 doi: 10.1088/1361-6641/acd951
[8]
Katoh S, Yamazumi S and Watanabe A. The P−layer punch-through structure with a thick, high concentration p emitter for a light-triggered thyristor. IEEE Transactions on Power Electronics, 2002, 17(6), 1067 doi: 10.1109/TPEL.2002.805596
[9]
Bai C S, Huo F F, Li T, et al. Study of High voltage soft start device based on light triggered thyristor. Power Electronics, 2013, 47(7), 104
[10]
Zhang Q, Callanan R, Das M K, et al. SiC power devices for microgrids. IEEE Transactions on Power Electronics, 2010, 25(12), 2889 doi: 10.1109/TPEL.2010.2079956
[11]
Dheilly N, Planson D, Pâques G, et al. Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE. Solid-State Electronics, 2012, 73, 32 doi: 10.1016/j.sse.2012.02.007
[12]
Wang X, Pu H B, Liu Q, et al. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile. Chinese Physics B, 2018, 27(10), 108502 doi: 10.1088/1674-1056/27/10/108502
[13]
Chow T P. Progress in high voltage SiC and GaN power switching devices. Materials Science Forum, 2014, 778-780,1077
[14]
Nechaev N E, Fridman B E, Khapugin A A, et al. LTT switch unit for capacitive energy storages. Defence Technology, 2018, 14(5), 616 doi: 10.1016/j.dt.2018.07.019
[15]
Wang X, Pu H, Liu Q, et al. Demonstration of 4H-SiC thyristor triggered by 100-mW/cm2 UV light. IEEE Electron Device Letters, 2020, 41(6), 824 doi: 10.1109/LED.2020.2988913
[16]
Yang T, Li X, Wang Y, et al. 12.5 kV SiC Gate Turn off thyristor with trench-modulated JTE structure. IEEE Transactions on Electron Devices, 2022, 69(3), 1258 doi: 10.1109/TED.2022.3146214
[17]
Li Z, Zhang L, Li L, et al. A SiC gate turn-off thyristor with high di/dt for fast switching-on applications. Semiconductor Science and Technology, 2021, 36(12), 12
[18]
Mojab A and Mazumder S K. Design and characterization of high-current optical darlington transistor for pulsed-power applications. IEEE Transactions on Electron Devices, 2017, 64(3), 769 doi: 10.1109/TED.2016.2635632
[19]
O'Brien H, Shaheen W, Chiscop V, et al. Evaluation of Si and SiC SGTOs for high-action army applications. IEEE Transactions on Magnetics, 2009, 45(1), 402 doi: 10.1109/TMAG.2008.2008549
[20]
Dheilly N, Paques G, Scharnholz S, et al. Optical triggering of SiC thyristors using UV LEDs. Electronics Letters, 2011, 47, 7 doi: 10.1049/el.2010.7337
[21]
Hasegawa J, Pace L, Phung L V, et al. Simulation-Based Study about the lifetime and incident light properties dependence of the optically triggered 4H-SiC thyristors operation. IEEE Transactions on Electron Devices, 2017, 64(3), 1203 doi: 10.1109/TED.2017.2657223
Fig. 1.  (Color online) Device structure of the SiC LIMS chip.

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Fig. 2.  (Color online) (a) Multi-light triggered electrode structure on the anode electrode surface for the SiC-based LIMS (the green area is anode electrode and the other is the light triggered area). (b) the conduction characteristics of single-gate and multi-gate switches.

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Fig. 3.  (Color online) (a) Schematic diagram of field limiting rings structure. (b)The simulated curve of breakdown voltage for the prepared SiC-based LIMS.

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Fig. 4.  (Color online) The simulated output current curves for the prepared SiC-based LIMS with identical laser energy and different pulse width.

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Fig. 5.  (Color online) Picture of the prepared SiC-based LIMS chip.

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Fig. 6.  Schematic circuit diagram for evaluating the switching characteristics of the SiC-based LIMS.

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Fig. 7.  (Color online) Discharging current waveforms of the contrastive SiC-based LIMS with different laser energy under the working voltage of 1.5 kV.

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Fig. 8.  (Color online) Discharging current (a) and voltage (b) waveforms of the prepared SiC-based LIMS with different laser energy under the working voltage of 1.5 kV.

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Fig. 9.  (Color online) Discharging current (a) and voltage (b) waveforms of the prepared SiC-based LIMS with different laser energy and the voltage of 0.5 kV.

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Fig. 10.  (Color online) Discharging current (a) and voltage (b) waveforms of the SiC-based LIMS with different input voltage and the laser energy of 40 μJ.

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Fig. 11.  The measured I-V curve of the prepared SiC-based LIMS at room temperature.

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Fig. 12.  Waveform of the resistance of the prepared SiC-based LIMS with the working voltage from 0.5 to 3.5 kV.

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Table 1.   Impact ionization parameters

Parameters Electron Hole
$ \mathrm{a} $(1/V) 1.43×105 3.14×106
b(V/cm) 4.93×106 1.18×107
c(1/K) 0 6.3×10−3
d(1/K) 0 1.23×10−3
$ {{\gamma }}_{1} $ 0 0
$ {\gamma }_{2} $ 2.37 1.02
DownLoad: CSV

Table 2.   The characteristics of the rings.

Ring
order		 Class
number		 Initial
spacing
value/μm		 Increasing value
between
class/μm		 Width of
ring/μm
1-18 3 1.8 0.1 3
19-48 5 2.2 0.2 3
49-78 5 3.3 0.3 3
79-84 1 4.2 / 3
85 / 4.1 / 3
86 / 4.0 / 3
DownLoad: CSV
[1]
Rocabert J, Luna A, Blaabjerg F, et al. Control of power converters in AC microgrids. IEEE Transactions on Power Electronics, 2012, 27(11), 4734 doi: 10.1109/TPEL.2012.2199334
[2]
Luan C B, Liu H W, Fu J B, et al. Study of a Si-based light initiated multi-gate semiconductor switch for high temperatures. Scientific Reports, 2022, 12, 15508 doi: 10.1038/s41598-022-19767-4
[3]
Yin J C, Bai Y J, Shi K, et al. Direct triggering LTT with monolithic structure. Journal of the Electron Devices Society, 2022, 10, 843
[4]
Nakao H, Nakagoshi Y, Hatano M, et al. Test of a LTT thyristor valve for next generation 500 kV HVDC transmission system. IEEE Power Engineering Society Winter Meeting, 2000, 2932
[5]
Rumyantsev S L, Levinshtein M E, Shur M S, et al. Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors. Semicond. Sci. Technol., 2014, 28(12), 125017
[6]
Mojab A, Mazumder S K, Cheng L, et al. , 15-kV single-bias all-optical ETO thyristor. IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, 313
[7]
Yin J C, Bai Y J, Cao J, et al. Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors. Semiconductor Science and Technology, 2023, 38(7), 75011 doi: 10.1088/1361-6641/acd951
[8]
Katoh S, Yamazumi S and Watanabe A. The P−layer punch-through structure with a thick, high concentration p emitter for a light-triggered thyristor. IEEE Transactions on Power Electronics, 2002, 17(6), 1067 doi: 10.1109/TPEL.2002.805596
[9]
Bai C S, Huo F F, Li T, et al. Study of High voltage soft start device based on light triggered thyristor. Power Electronics, 2013, 47(7), 104
[10]
Zhang Q, Callanan R, Das M K, et al. SiC power devices for microgrids. IEEE Transactions on Power Electronics, 2010, 25(12), 2889 doi: 10.1109/TPEL.2010.2079956
[11]
Dheilly N, Planson D, Pâques G, et al. Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE. Solid-State Electronics, 2012, 73, 32 doi: 10.1016/j.sse.2012.02.007
[12]
Wang X, Pu H B, Liu Q, et al. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile. Chinese Physics B, 2018, 27(10), 108502 doi: 10.1088/1674-1056/27/10/108502
[13]
Chow T P. Progress in high voltage SiC and GaN power switching devices. Materials Science Forum, 2014, 778-780,1077
[14]
Nechaev N E, Fridman B E, Khapugin A A, et al. LTT switch unit for capacitive energy storages. Defence Technology, 2018, 14(5), 616 doi: 10.1016/j.dt.2018.07.019
[15]
Wang X, Pu H, Liu Q, et al. Demonstration of 4H-SiC thyristor triggered by 100-mW/cm2 UV light. IEEE Electron Device Letters, 2020, 41(6), 824 doi: 10.1109/LED.2020.2988913
[16]
Yang T, Li X, Wang Y, et al. 12.5 kV SiC Gate Turn off thyristor with trench-modulated JTE structure. IEEE Transactions on Electron Devices, 2022, 69(3), 1258 doi: 10.1109/TED.2022.3146214
[17]
Li Z, Zhang L, Li L, et al. A SiC gate turn-off thyristor with high di/dt for fast switching-on applications. Semiconductor Science and Technology, 2021, 36(12), 12
[18]
Mojab A and Mazumder S K. Design and characterization of high-current optical darlington transistor for pulsed-power applications. IEEE Transactions on Electron Devices, 2017, 64(3), 769 doi: 10.1109/TED.2016.2635632
[19]
O'Brien H, Shaheen W, Chiscop V, et al. Evaluation of Si and SiC SGTOs for high-action army applications. IEEE Transactions on Magnetics, 2009, 45(1), 402 doi: 10.1109/TMAG.2008.2008549
[20]
Dheilly N, Paques G, Scharnholz S, et al. Optical triggering of SiC thyristors using UV LEDs. Electronics Letters, 2011, 47, 7 doi: 10.1049/el.2010.7337
[21]
Hasegawa J, Pace L, Phung L V, et al. Simulation-Based Study about the lifetime and incident light properties dependence of the optically triggered 4H-SiC thyristors operation. IEEE Transactions on Electron Devices, 2017, 64(3), 1203 doi: 10.1109/TED.2017.2657223

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    Received: 16 February 2025 Revised: 19 April 2025 Online: Accepted Manuscript: 14 May 2025

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      Article Navigation >  Journal of Semiconductors  > 2025  > Accepted Manuscript
      Chongbiao Luan, Jianqiang Yuan, Hongwei Liu, Longfei Xiao, Huiru Sha, Le Xu, Yang He, Lingyun Wang, Hongtao Li, Yupeng Huang. Study of a novel SiC-based light initiated multi-gate semiconductor switch[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25020033 ****C B Luan, J Q Yuan, H W Liu, L F Xiao, H R Sha, L Xu, Y He, L Y Wang, H T Li, and Y P Huang, Study of a novel SiC-based light initiated multi-gate semiconductor switch[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25020033
      Citation:
      Chongbiao Luan, Jianqiang Yuan, Hongwei Liu, Longfei Xiao, Huiru Sha, Le Xu, Yang He, Lingyun Wang, Hongtao Li, Yupeng Huang. Study of a novel SiC-based light initiated multi-gate semiconductor switch[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25020033 ****
      C B Luan, J Q Yuan, H W Liu, L F Xiao, H R Sha, L Xu, Y He, L Y Wang, H T Li, and Y P Huang, Study of a novel SiC-based light initiated multi-gate semiconductor switch[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25020033
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      Study of a novel SiC-based light initiated multi-gate semiconductor switch

      DOI: 10.1088/1674-4926/25020033
      CSTR: 32376.14.1674-4926.25020033
      • 1.

        Key laboratory of pulsed power, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China

      • 2.

        Institute of Novel Semiconductors and State Key Laboratory of Crystal Materials, Shandong University, JiNan 250100, China

      More Information
      • Chongbiao Luan (Member, IEEE) received the B.S. degree in physics and the Ph.D. degree in microelectronics and solid state electronics from Shandong University, Jinan, China, in 2009 and 2014, respectively. He works at pulsed power with the Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, China. His current research interest includes the solid state pulsed power technology, especially in solid state switches and storage devices
      • Hongwei Liu received the B.S. degree in engineering physics from Tsinghua University, Beijing, China, in 2004 and the M.S. degree from the Graduate School of China Academy of Engineering Physics, Mianyang, China, in 2007. He is currently with the Institute of Fluid Physics, China Academy of Engineering Physics. His main research interests include photoconductive semiconductor switches and linear transformer driver
      • Corresponding author: luanchongbiao@163.com
      • Received Date: 2025-02-16
      • Revised Date: 2025-04-19
        • Available Online: 2025-05-14

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