| Citation: |
Di Zhang, Yang Li. A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. Journal of Semiconductors, 2025, 46(8): 080401. doi: 10.1088/1674-4926/25050016
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D Zhang and Y Li, A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. J. Semicond., 2025, 46(8), 080401 doi: 10.1088/1674-4926/25050016
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A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform
DOI: 10.1088/1674-4926/25050016
CSTR: 32376.14.1674-4926.25050016
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References
[1] Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5[2] Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature, 2023, 613, 274 doi: 10.1038/s41586-022-05431-4[3] Huang J K, Wan Y, Shi J J, et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 2022, 605, 262 doi: 10.1038/s41586-022-04588-2[4] Li W S, Zhou J, Cai S H, et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat Electron, 2019, 2, 563 doi: 10.1038/s41928-019-0334-y[5] Liao J C, Lai Z X, Meng Y, et al. Recent progress on elemental tellurium and its devices. J Semicond, 2025, 46, 011605 doi: 10.1088/1674-4926/24090020[6] Li T T, Guo W, Ma L, et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat Nanotechnol, 2021, 16, 1201 doi: 10.1038/s41565-021-00963-8[7] Shen P C, Shu C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9[8] Illarionov Y Y, Banshchikov A G, Polyushkin D K, et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat Electron, 2019, 2, 230 doi: 10.1038/s41928-019-0256-8[9] Liu K L, Fin B, Han W, et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat Electron, 2021, 4, 906 doi: 10.1038/s41928-021-00683-w[10] Thakur N, Murthy H, Arumugam S, et al. Direct ink writing of nickel oxide-based thin films for room temperature gas detection. J Semicond, 2025, 46, 012606 doi: 10.1088/1674-4926/24080025[11] Ao M R, Zhou X C, Kong X J, et al. A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature, 2025, 640, 654 doi: 10.1038/s41586-025-08759-9[12] Ma J Y, Chen X Y, Wang X Y, et al. Engineering top gate stack for wafer-scale integrated circuit fabrication based on two-dimensional semiconductors. ACS Appl Mater Interfaces, 2022, 14, 11610 doi: 10.1021/acsami.1c22990[13] Kong L G, Zhang X D, Tao Q Y, et al. Doping-free complementary WSe2 circuit via van der Waals metal integration. Nat Commun, 2020, 11, 1866 doi: 10.1038/s41467-020-15776-x[14] Lee D, Lee J J, Kim Y S, et al. Remote modulation doping in van der Waals heterostructure transistors. Nat Electron, 2021, 4, 664 doi: 10.1038/s41928-021-00641-6[15] Guan K D, Chen D, Hua Q L, et al. Sweat-permeable electronic patches by designing three-dimensional liquid diodes. J Semicond, 2024, 45, 070401 doi: 10.1088/1674-4926/24040035 -
Proportional views



Di Zhang is currently a Master's student at the School of Information Science and Engineering, University of jinan. Her current research focuses on the fabrication and optoelectronic properties of memristive devices and their applications in neuromorphic computing.
Yang Li has been a professor of Shandong university, China, since 2022. He received his PhD degree in Electronic Engineering from Kwangwoon University, Korea, in 2015. His research interests include flexible sensing materials and devices, memristive materials and devices, neuromorphic computing applications, RF passive device design, and advanced semiconductor fabrication. He has published over 150 peer reviewed journal and conference papers in the relevant fields.
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