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Journal of Semiconductors
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2025
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Di Zhang, Yang Li. A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25050016
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D Zhang and Y Li, A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. J. Semicond., 2025, 46(8), 080401 doi: 10.1088/1674-4926/25050016
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A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform
DOI: 10.1088/1674-4926/25050016
CSTR: 32376.14.1674-4926.25050016
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References
[1] Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5[2] Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature, 2023, 613, 274 doi: 10.1038/s41586-022-05431-4[3] Huang J K, Wan Y, Shi J J, et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 2022, 605, 262 doi: 10.1038/s41586-022-04588-2[4] Li W S, Zhou J, Cai S H, et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat Electron, 2019, 2, 563 doi: 10.1038/s41928-019-0334-y[5] Liao J C, Lai Z X, Meng Y, et al. Recent progress on elemental tellurium and its devices. J Semicond, 2025, 46, 011605 doi: 10.1088/1674-4926/24090020[6] Li T T, Guo W, Ma L, et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat Nanotechnol, 2021, 16, 1201 doi: 10.1038/s41565-021-00963-8[7] Shen P C, Shu C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9[8] Illarionov Y Y, Banshchikov A G, Polyushkin D K, et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat Electron, 2019, 2, 230 doi: 10.1038/s41928-019-0256-8[9] Liu K L, Fin B, Han W, et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat Electron, 2021, 4, 906 doi: 10.1038/s41928-021-00683-w[10] Thakur N, Murthy H, Arumugam S, et al. Direct ink writing of nickel oxide-based thin films for room temperature gas detection. J Semicond, 2025, 46, 012606 doi: 10.1088/1674-4926/24080025[11] Ao M R, Zhou X C, Kong X J, et al. A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature, 2025, 640, 654 doi: 10.1038/s41586-025-08759-9[12] Ma J Y, Chen X Y, Wang X Y, et al. Engineering top gate stack for wafer-scale integrated circuit fabrication based on two-dimensional semiconductors. ACS Appl Mater Interfaces, 2022, 14, 11610 doi: 10.1021/acsami.1c22990[13] Kong L G, Zhang X D, Tao Q Y, et al. Doping-free complementary WSe2 circuit via van der Waals metal integration. Nat Commun, 2020, 11, 1866 doi: 10.1038/s41467-020-15776-x[14] Lee D, Lee J J, Kim Y S, et al. Remote modulation doping in van der Waals heterostructure transistors. Nat Electron, 2021, 4, 664 doi: 10.1038/s41928-021-00641-6[15] Guan K D, Chen D, Hua Q L, et al. Sweat-permeable electronic patches by designing three-dimensional liquid diodes. J Semicond, 2024, 45, 070401 doi: 10.1088/1674-4926/24040035 -
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