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A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform

Di Zhang1 and Yang Li2,

+ Author Affiliations

 Corresponding author: Yang Li, yang.li@sdu.edu.cn

DOI: 10.1088/1674-4926/25050016CSTR: 32376.14.1674-4926.25050016

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[1]
Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5
[2]
Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature, 2023, 613, 274 doi: 10.1038/s41586-022-05431-4
[3]
Huang J K, Wan Y, Shi J J, et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 2022, 605, 262 doi: 10.1038/s41586-022-04588-2
[4]
Li W S, Zhou J, Cai S H, et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat Electron, 2019, 2, 563 doi: 10.1038/s41928-019-0334-y
[5]
Liao J C, Lai Z X, Meng Y, et al. Recent progress on elemental tellurium and its devices. J Semicond, 2025, 46, 011605 doi: 10.1088/1674-4926/24090020
[6]
Li T T, Guo W, Ma L, et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat Nanotechnol, 2021, 16, 1201 doi: 10.1038/s41565-021-00963-8
[7]
Shen P C, Shu C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9
[8]
Illarionov Y Y, Banshchikov A G, Polyushkin D K, et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat Electron, 2019, 2, 230 doi: 10.1038/s41928-019-0256-8
[9]
Liu K L, Fin B, Han W, et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat Electron, 2021, 4, 906 doi: 10.1038/s41928-021-00683-w
[10]
Thakur N, Murthy H, Arumugam S, et al. Direct ink writing of nickel oxide-based thin films for room temperature gas detection. J Semicond, 2025, 46, 012606 doi: 10.1088/1674-4926/24080025
[11]
Ao M R, Zhou X C, Kong X J, et al. A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature, 2025, 640, 654 doi: 10.1038/s41586-025-08759-9
[12]
Ma J Y, Chen X Y, Wang X Y, et al. Engineering top gate stack for wafer-scale integrated circuit fabrication based on two-dimensional semiconductors. ACS Appl Mater Interfaces, 2022, 14, 11610 doi: 10.1021/acsami.1c22990
[13]
Kong L G, Zhang X D, Tao Q Y, et al. Doping-free complementary WSe2 circuit via van der Waals metal integration. Nat Commun, 2020, 11, 1866 doi: 10.1038/s41467-020-15776-x
[14]
Lee D, Lee J J, Kim Y S, et al. Remote modulation doping in van der Waals heterostructure transistors. Nat Electron, 2021, 4, 664 doi: 10.1038/s41928-021-00641-6
[15]
Guan K D, Chen D, Hua Q L, et al. Sweat-permeable electronic patches by designing three-dimensional liquid diodes. J Semicond, 2024, 45, 070401 doi: 10.1088/1674-4926/24040035
Fig. 1.  (Color online) (a) Left, 24 WUJI chips on a 4-inch sapphire wafer. Right, a close-up optical image of a 6 mm × 6 mm die with 5900 MoS2 transistors and peripheral I/O pads. (b) Scaled schematic of the RV32-WUJI die’s physical layout, with the bottom layer being MoS2 on sapphire. (c) Transfer curves of the inverter’s 50 load and 50 drive transistors. (d) Static voltage transfer traits of 900 inverters with noise tolerance. (e) Gain value distribution of 50 inverters. SS is subthreshold swing; VTG is top-gate voltage. (f) The 17-stage longest logic gate path has a 171 μs max delay. (g) Upper left shows circuit structures like controlled full adders, 4-input multiplexers, counters, and a 32-bit register. Upper right shows their basic logic functions. (h) Data path schematic through the nine modules[11].

[1]
Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5
[2]
Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature, 2023, 613, 274 doi: 10.1038/s41586-022-05431-4
[3]
Huang J K, Wan Y, Shi J J, et al. High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 2022, 605, 262 doi: 10.1038/s41586-022-04588-2
[4]
Li W S, Zhou J, Cai S H, et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat Electron, 2019, 2, 563 doi: 10.1038/s41928-019-0334-y
[5]
Liao J C, Lai Z X, Meng Y, et al. Recent progress on elemental tellurium and its devices. J Semicond, 2025, 46, 011605 doi: 10.1088/1674-4926/24090020
[6]
Li T T, Guo W, Ma L, et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat Nanotechnol, 2021, 16, 1201 doi: 10.1038/s41565-021-00963-8
[7]
Shen P C, Shu C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9
[8]
Illarionov Y Y, Banshchikov A G, Polyushkin D K, et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat Electron, 2019, 2, 230 doi: 10.1038/s41928-019-0256-8
[9]
Liu K L, Fin B, Han W, et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat Electron, 2021, 4, 906 doi: 10.1038/s41928-021-00683-w
[10]
Thakur N, Murthy H, Arumugam S, et al. Direct ink writing of nickel oxide-based thin films for room temperature gas detection. J Semicond, 2025, 46, 012606 doi: 10.1088/1674-4926/24080025
[11]
Ao M R, Zhou X C, Kong X J, et al. A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature, 2025, 640, 654 doi: 10.1038/s41586-025-08759-9
[12]
Ma J Y, Chen X Y, Wang X Y, et al. Engineering top gate stack for wafer-scale integrated circuit fabrication based on two-dimensional semiconductors. ACS Appl Mater Interfaces, 2022, 14, 11610 doi: 10.1021/acsami.1c22990
[13]
Kong L G, Zhang X D, Tao Q Y, et al. Doping-free complementary WSe2 circuit via van der Waals metal integration. Nat Commun, 2020, 11, 1866 doi: 10.1038/s41467-020-15776-x
[14]
Lee D, Lee J J, Kim Y S, et al. Remote modulation doping in van der Waals heterostructure transistors. Nat Electron, 2021, 4, 664 doi: 10.1038/s41928-021-00641-6
[15]
Guan K D, Chen D, Hua Q L, et al. Sweat-permeable electronic patches by designing three-dimensional liquid diodes. J Semicond, 2024, 45, 070401 doi: 10.1088/1674-4926/24040035
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    Received: 13 May 2025 Revised: Online: Accepted Manuscript: 06 June 2025Uncorrected proof: 06 June 2025

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      Di Zhang, Yang Li. A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25050016 ****D Zhang and Y Li, A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. J. Semicond., 2025, 46(8), 080401 doi: 10.1088/1674-4926/25050016
      Citation:
      Di Zhang, Yang Li. A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25050016 ****
      D Zhang and Y Li, A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform[J]. J. Semicond., 2025, 46(8), 080401 doi: 10.1088/1674-4926/25050016

      A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform

      DOI: 10.1088/1674-4926/25050016
      CSTR: 32376.14.1674-4926.25050016
      More Information
      • Di Zhang is currently a Master's student at the School of Information Science and Engineering, University of jinan. Her current research focuses on the fabrication and optoelectronic properties of memristive devices and their applications in neuromorphic computing
      • Yang Li has been a professor of Shandong university, China, since 2022. He received his PhD degree in Electronic Engineering from Kwangwoon University, Korea, in 2015. His research interests include flexible sensing materials and devices, memristive materials and devices, neuromorphic computing applications, RF passive device design, and advanced semiconductor fabrication. He has published over 150 peer reviewed journal and conference papers in the relevant fields
      • Corresponding author: yang.li@sdu.edu.cn
      • Received Date: 2025-05-13
        Available Online: 2025-06-06

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