Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

Tong Xu; Meixin Feng; Xiujian Sun; Rui Xi; Xinchao Li; Shuming Zhang; Qian Sun; Xiaoqi Yu; Kanglin Xiong; Hui Yang; Xianfei Zhang; Zhuangpeng Guo; Peng Chen

doi:10.1088/1674-4926/25070031

J. Semicond. > In Press

SHORT COMMUNICATION

Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

Tong Xu^{1, 2, 3}, Meixin Feng^1,, Xiujian Sun¹, Rui Xi¹, Xinchao Li¹, Shuming Zhang¹, Qian Sun^1,, Xiaoqi Yu², Kanglin Xiong², Hui Yang^{1, 2}, Xianfei Zhang³, Zhuangpeng Guo³ and Peng Chen³

+ Author Affiliations

1. Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
2. Suzhou Laboratory, Suzhou 215123, ChinaSuzhou Laboratory, Suzhou 215123, China
3. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Author Bio:

Tong Xu received his B.S. degree from Zhejiang Normal University, Jinhua, China, in 2020. He is currently working toward the Ph.D. degree at School of Electronic Science and Engineering, Nanjing University, Nanjing, China. His current research interests include photonic-crystal surface-emitting lasers.

Meixin Feng received his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, China, in 2014. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices.

Qian Sun received his Ph.D. degree from Yale University, New Haven, CT, USA, in 2009. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices.

Corresponding author: Meixin Feng, mxfeng2011@sinano.ac.cn; Qian Sun, qsun2011@sinano.ac.cn

DOI: 10.1088/1674-4926/25070031CSTR: 32376.14.1674-4926.25070031

References

[1]	Hirose K, Liang Y, Kurosaka Y, et al. Watt-class high-power, high-beam-quality photonic-crystal lasers. Nat Photonics, 2014, 8, 406 doi: 10.1038/nphoton.2014.75
[2]	Inoue T, Yoshida M, Gelleta J, et al. General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation. Nat Commun, 2022, 13, 3262 doi: 10.1038/s41467-022-30910-7
[3]	Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1, 802 doi: 10.1038/s44287-024-00113-x
[4]	Yoshida M, Katsuno S, Inoue T, et al. High-brightness scalable continuous-wave single-mode photonic-crystal laser. Nature, 2023, 618(7966), 727 doi: 10.1038/s41586-023-06059-8
[5]	Wang H Z, Kawahito Y, Yoshida R, et al. Development of a high-power blue laser (445 nm) for material processing. Opt Lett, 2017, 42(12), 2251 doi: 10.1364/OL.42.002251
[6]	Nakatsu Y, Nagao Y, Hirao T, et al. Blue and green InGaN semiconductor lasers as light sources for displays. Gallium Nitride Materials and Devices XV, 2020, 11280, 81 doi: https://doi.org/10.1117/12.2541710
[7]	Linden K J. Low-cost 420nm blue laser diode for tissue cutting and hemostasis. Optical Interactions with Tissue and Cells XXVII, 2016, 9706, 29 doi: https://doi.org/10.1117/12.2208315
[8]	Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862), 445 doi: 10.1126/science.1150413
[9]	Kawashima S, Kawashima T, Nagatomo Y, et al. GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding. Appl Phys Lett, 2010, 97(25), 251112 doi: 10.1063/1.3528352
[10]	Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3, 72 doi: 10.1038/s43246-022-00288-6
[11]	Liang Y, Peng C, Sakai K, et al. Three-dimensional coupled-wave model for square-lattice photonic crystal lasers with transverse electric polarization: A general approach. Phys Rev B, 2011, 84(19), 195119 doi: 10.1103/PhysRevB.84.195119
[12]	Coldren L A, Corzine S W, Mašanović M L. Diode Lasers and Photonic Integrated Circuits. Wiley, 2012 doi: 10.1002/9781118148167

Fig. 1. (Color online) Schematic diagram of the regrowth-free GaN-PCSELs.

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Fig. 2. (Color online) Calculation results of (a) the internal losses, PC losses, optical confinement factors in the MQWs and PC layer, (b) the total losses and threshold material gain variation with the p-GaN thickness.

DownLoad: Full-Size Img PowerPoint

Fig. 3. The (a) top-view and (b) cross-sectional SEM images of the PC structure.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Normalized EL spectra, (b) L−I−V curve, and (c) FFP (24.6 A) of the as-fabricated GaN-based PCSEL.

DownLoad: Full-Size Img PowerPoint

[1]	Hirose K, Liang Y, Kurosaka Y, et al. Watt-class high-power, high-beam-quality photonic-crystal lasers. Nat Photonics, 2014, 8, 406 doi: 10.1038/nphoton.2014.75
[2]	Inoue T, Yoshida M, Gelleta J, et al. General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation. Nat Commun, 2022, 13, 3262 doi: 10.1038/s41467-022-30910-7
[3]	Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1, 802 doi: 10.1038/s44287-024-00113-x
[4]	Yoshida M, Katsuno S, Inoue T, et al. High-brightness scalable continuous-wave single-mode photonic-crystal laser. Nature, 2023, 618(7966), 727 doi: 10.1038/s41586-023-06059-8
[5]	Wang H Z, Kawahito Y, Yoshida R, et al. Development of a high-power blue laser (445 nm) for material processing. Opt Lett, 2017, 42(12), 2251 doi: 10.1364/OL.42.002251
[6]	Nakatsu Y, Nagao Y, Hirao T, et al. Blue and green InGaN semiconductor lasers as light sources for displays. Gallium Nitride Materials and Devices XV, 2020, 11280, 81 doi: https://doi.org/10.1117/12.2541710
[7]	Linden K J. Low-cost 420nm blue laser diode for tissue cutting and hemostasis. Optical Interactions with Tissue and Cells XXVII, 2016, 9706, 29 doi: https://doi.org/10.1117/12.2208315
[8]	Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862), 445 doi: 10.1126/science.1150413
[9]	Kawashima S, Kawashima T, Nagatomo Y, et al. GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding. Appl Phys Lett, 2010, 97(25), 251112 doi: 10.1063/1.3528352
[10]	Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3, 72 doi: 10.1038/s43246-022-00288-6
[11]	Liang Y, Peng C, Sakai K, et al. Three-dimensional coupled-wave model for square-lattice photonic crystal lasers with transverse electric polarization: A general approach. Phys Rev B, 2011, 84(19), 195119 doi: 10.1103/PhysRevB.84.195119
[12]	Coldren L A, Corzine S W, Mašanović M L. Diode Lasers and Photonic Integrated Circuits. Wiley, 2012 doi: 10.1002/9781118148167

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History

Received: 22 July 2025 Revised: 28 July 2025 Online: Accepted Manuscript: 12 August 2025Uncorrected proof: 12 August 2025

Article Navigation > Journal of Semiconductors > 2025 > Uncorrected proof

Tong Xu, Meixin Feng, Xiujian Sun, Rui Xi, Xinchao Li, Shuming Zhang, Qian Sun, Xiaoqi Yu, Kanglin Xiong, Hui Yang, Xianfei Zhang, Zhuangpeng Guo, Peng Chen. Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25070031 ****T Xu, M X Feng, X J Sun, R Xi, X C Li, S M Zhang, Q Sun, X Q Yu, K L Xiong, H Yang, X F Zhang, Z P Guo, and P Chen, Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. J. Semicond., 2025, 46(9), 090501 doi: 10.1088/1674-4926/25070031

Citation:

T Xu, M X Feng, X J Sun, R Xi, X C Li, S M Zhang, Q Sun, X Q Yu, K L Xiong, H Yang, X F Zhang, Z P Guo, and P Chen, Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. J. Semicond., 2025, 46(9), 090501 doi: 10.1088/1674-4926/25070031

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Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

DOI: 10.1088/1674-4926/25070031

CSTR: 32376.14.1674-4926.25070031

1.
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
2.
Suzhou Laboratory, Suzhou 215123, China
3.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

More Information

Tong Xu received his B.S. degree from Zhejiang Normal University, Jinhua, China, in 2020. He is currently working toward the Ph.D. degree at School of Electronic Science and Engineering, Nanjing University, Nanjing, China. His current research interests include photonic-crystal surface-emitting lasers
Meixin Feng received his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, China, in 2014. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices
Qian Sun received his Ph.D. degree from Yale University, New Haven, CT, USA, in 2009. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices
Corresponding author: mxfeng2011@sinano.ac.cn; qsun2011@sinano.ac.cn
Received Date: 2025-07-22
Revised Date: 2025-07-28

Available Online: 2025-08-12

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