Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs

Yuzhen Zheng; Zhiwei Sun; Tong Xu; Bolin Zhou; Xiaoqi Yu; Xinrui Wang; Junfei Wang; Yongchen Miao; Suman Xia; Zhi Liu; Zengcheng Li; Pengyan Wen; Kanglin Xiong; Jianping Liu; Huaibing Wang; Hui Yang

doi:10.1088/1674-4926/25120001

J. Semicond. > Just Accepted

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Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs

Yuzhen Zheng¹, Zhiwei Sun¹, Tong Xu^{1, 2}, Bolin Zhou¹, Xiaoqi Yu¹, Xinrui Wang¹, Junfei Wang¹, Yongchen Miao¹, Suman Xia¹, Zhi Liu³, Zengcheng Li³, Pengyan Wen¹, Kanglin Xiong^1,, Jianping Liu^{2, 3}, Huaibing Wang¹ and Hui Yang^{1, 2}

+ Author Affiliations

Corresponding author: Kanglin Xiong, xiongkl@szlab.ac.cn

DOI: 10.1088/1674-4926/25120001CSTR: 32376.14.1674-4926.25120001

Abstract: We demonstrate room-temperature pulsed lasing of two types of GaN-based surface emitting lasers (SEL) fabricated without epitaxial regrowth. We present a direct comparison between a circular grating (CGSEL) and a photonic crystal (PCSEL) design. The devices are realized by etching the photonic structures directly into the p-GaN cladding, and utilizing a patterned Indium Tin Oxide (ITO) top contact. Both designs exhibit lasing near 438 nm under pulsed current injection. The CGSEL, incorporating a central defect, achieves a low threshold current density (<1 kA/cm²) and a small divergence angle (≈0.15°) by coupling to a bandgap defect mode. In contrast, the PCSEL shows a higher threshold current density and lases on a 1D band-edge mode, resulting in a cross-shaped far-field pattern. These results confirm the regrowth-free method as a viable route for manufacturable GaN SELs. Crucially, the comparative study identifies the CGSEL defect-mode design as a more robust path toward high-performance lasing in low-confinement epitaxial structures.

Key words: photonic crystal surface emitting laser, circular grating surface emitting laser, GaN, regrowth free, threshold current density

References

[1]	Wu H D, Yuan M Z, Chen F T, et al. 16.8GHz longitudinal mode spacing 486nm blue laser for oceanic high-spectral-resolution lidar. Appl Phys B, 2025, 131(8): 160 doi: 10.1007/s00340-025-08524-w
[2]	Li Z H, Xu Z Y, Li S Q, et al. 21.79/17.49 gbps full-duplex visible light communication enabled by short-cavity blue and green InGaN/GaN laser diodes. J Lightwave Technol, 2025, 43(7): 3348 doi: 10.1109/JLT.2024.3520230
[3]	Yang Q Y, Zhang P L, Lu Q H, et al. Application and development of blue and green laser in industrial manufacturing: A review. Opt Laser Technol, 2024, 170: 110202 doi: 10.1016/j.optlastec.2023.110202
[4]	Sakai K, Miyai E, Sakaguchi T, et al. Lasing band-edge identification for a surface-emitting photonic crystal laser. IEEE J Select Areas Commun, 2005, 23(7): 1335 doi: 10.1109/JSAC.2005.851205
[5]	Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1(12): 802 doi: 10.1038/s44287-024-00113-x
[6]	Greene P L, Hall D G. Effects of radiation on circular-grating DFB lasers. I. Coupled-mode equations. IEEE J Quantum Electron, 2001, 37(3): 353
[7]	Liang G Z, Liang H K, Zhang Y, et al. Single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers. Appl Phys Lett, 2013, 102(3): 031119 doi: 10.1063/1.4789535
[8]	Inoue T, Morita R, Ishimura S, et al. Frequency-modulated high-power photonic-crystal surface-emitting lasers for long-distance coherent free-space optical communications. Nat Photon, 2025, 19(12): 1330 doi: 10.1038/s41566-025-01782-2
[9]	Kyaw A S M, King B C, McKenzie A F, et al. Epitaxially regrown quantum dot photonic crystal surface emitting lasers. Appl Phys Lett, 2024, 124(22): 221101 doi: 10.1063/5.0202834
[10]	Zhang X Y, Yin X F, Yang K J, et al. Electrically driven heterogeneous III-V/Si photonic crystal surface-emitting laser. Opt Lett, 2025, 50(22): 7083 doi: 10.1364/OL.575630
[11]	Wang P Y, Wang Z Y, Yu Y, et al. Room temperature CW operation of 1.3 μm quantum dot triple-lattice photonic crystal surface-emitting lasers with buried structure. Opt Express, 2025, 33(13): 27429 doi: 10.1364/OE.562475
[12]	Lang B, Sewell P D, Vukovic A, et al. Mode switching in photonic crystal surface emitting lasers with back reflectors and holes of varying depths. Opt Express, 2025, 33(17): 35257 doi: 10.1364/OE.568336
[13]	Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862): 445 doi: 10.1126/science.1150413
[14]	Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3: 72 doi: 10.1038/s43246-022-00288-6
[15]	Taguchi N, Iwai A, Noguchi M, et al. Green-wavelength GaN-based photonic-crystal surface-emitting lasers. Appl Phys Express, 2024, 17(1): 012002 doi: 10.35848/1882-0786/ad126f
[16]	Xu T, Feng M X, Sun X J, et al. Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers. J Semicond, 2025, 46(9): 090501 doi: 10.1088/1674-4926/25070031
[17]	Hu L, Ren X Y, Liu J P, et al. High-power hybrid GaN-based green laser diodes with ITO cladding layer. Photon Res, 2020, 8(3): 279 doi: 10.1364/PRJ.381262
[18]	Yoshida M, De Zoysa M, Ishizaki K, et al. Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams. Nature Mater, 2019, 18(2): 121 doi: 10.1038/s41563-018-0242-y

Fig. 1. (Color online) (a) Schematic diagram of GaN surface emitting laser diodes. The white bars represent the photonic crystal or circular grating. Laser emission occurs from the bottom. (b) Top view SEM image of the photonic crystal with a square lattice and circular air holes for the PCSEL. (c) SEM image of the grating region for the CGSEL. (d) Local view of the circular grating.

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Fig. 2. (Color online) Pulsed electrically injected measurement of the laser diodes. (a) Spectra of CGSEL and (b) PCSEL at different injection currents. (c) P–I–V curves. (d) Threshold current density vs size of photonic crystal area.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Far-field pattern of (a) CGSEL and (b) PCSEL under pulse current injection.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Polarization dependent near field image of (a) CGSEL and (b) PCSEL under pulse current injection.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Energy band structure before lasing and spectrum at gamma point measured under pulse electrical injection. (a),(b) CGSEL and (c),(d) PCSEL. The color bars are deliberately omitted. Band are labeled. In (a) A, S represent anti-symmetric, symmetric band, respective. In (c), A, B, C, and D conventionally denote four energy bands according to symmetry.

DownLoad: Full-Size Img PowerPoint

[1]	Wu H D, Yuan M Z, Chen F T, et al. 16.8GHz longitudinal mode spacing 486nm blue laser for oceanic high-spectral-resolution lidar. Appl Phys B, 2025, 131(8): 160 doi: 10.1007/s00340-025-08524-w
[2]	Li Z H, Xu Z Y, Li S Q, et al. 21.79/17.49 gbps full-duplex visible light communication enabled by short-cavity blue and green InGaN/GaN laser diodes. J Lightwave Technol, 2025, 43(7): 3348 doi: 10.1109/JLT.2024.3520230
[3]	Yang Q Y, Zhang P L, Lu Q H, et al. Application and development of blue and green laser in industrial manufacturing: A review. Opt Laser Technol, 2024, 170: 110202 doi: 10.1016/j.optlastec.2023.110202
[4]	Sakai K, Miyai E, Sakaguchi T, et al. Lasing band-edge identification for a surface-emitting photonic crystal laser. IEEE J Select Areas Commun, 2005, 23(7): 1335 doi: 10.1109/JSAC.2005.851205
[5]	Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1(12): 802 doi: 10.1038/s44287-024-00113-x
[6]	Greene P L, Hall D G. Effects of radiation on circular-grating DFB lasers. I. Coupled-mode equations. IEEE J Quantum Electron, 2001, 37(3): 353
[7]	Liang G Z, Liang H K, Zhang Y, et al. Single-mode surface-emitting concentric-circular-grating terahertz quantum cascade lasers. Appl Phys Lett, 2013, 102(3): 031119 doi: 10.1063/1.4789535
[8]	Inoue T, Morita R, Ishimura S, et al. Frequency-modulated high-power photonic-crystal surface-emitting lasers for long-distance coherent free-space optical communications. Nat Photon, 2025, 19(12): 1330 doi: 10.1038/s41566-025-01782-2
[9]	Kyaw A S M, King B C, McKenzie A F, et al. Epitaxially regrown quantum dot photonic crystal surface emitting lasers. Appl Phys Lett, 2024, 124(22): 221101 doi: 10.1063/5.0202834
[10]	Zhang X Y, Yin X F, Yang K J, et al. Electrically driven heterogeneous III-V/Si photonic crystal surface-emitting laser. Opt Lett, 2025, 50(22): 7083 doi: 10.1364/OL.575630
[11]	Wang P Y, Wang Z Y, Yu Y, et al. Room temperature CW operation of 1.3 μm quantum dot triple-lattice photonic crystal surface-emitting lasers with buried structure. Opt Express, 2025, 33(13): 27429 doi: 10.1364/OE.562475
[12]	Lang B, Sewell P D, Vukovic A, et al. Mode switching in photonic crystal surface emitting lasers with back reflectors and holes of varying depths. Opt Express, 2025, 33(17): 35257 doi: 10.1364/OE.568336
[13]	Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862): 445 doi: 10.1126/science.1150413
[14]	Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3: 72 doi: 10.1038/s43246-022-00288-6
[15]	Taguchi N, Iwai A, Noguchi M, et al. Green-wavelength GaN-based photonic-crystal surface-emitting lasers. Appl Phys Express, 2024, 17(1): 012002 doi: 10.35848/1882-0786/ad126f
[16]	Xu T, Feng M X, Sun X J, et al. Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers. J Semicond, 2025, 46(9): 090501 doi: 10.1088/1674-4926/25070031
[17]	Hu L, Ren X Y, Liu J P, et al. High-power hybrid GaN-based green laser diodes with ITO cladding layer. Photon Res, 2020, 8(3): 279 doi: 10.1364/PRJ.381262
[18]	Yoshida M, De Zoysa M, Ishizaki K, et al. Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams. Nature Mater, 2019, 18(2): 121 doi: 10.1038/s41563-018-0242-y

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Received: 01 December 2025 Revised: 31 December 2026 Online: Accepted Manuscript: 05 March 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Yuzhen Zheng, Zhiwei Sun, Tong Xu, Bolin Zhou, Xiaoqi Yu, Xinrui Wang, Junfei Wang, Yongchen Miao, Suman Xia, Zhi Liu, Zengcheng Li, Pengyan Wen, Kanglin Xiong, Jianping Liu, Huaibing Wang, Hui Yang. Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25120001 ****Y Z Zheng, Z W Sun, T Xu, B L Zhou, X Q Yu, X R Wang, J F Wang, Y C Miao, S M Xia, Z Liu, Z C Li, P Y Wen, K L Xiong, J P Liu, H B Wang, and H Yang, Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/25120001

Citation:

Y Z Zheng, Z W Sun, T Xu, B L Zhou, X Q Yu, X R Wang, J F Wang, Y C Miao, S M Xia, Z Liu, Z C Li, P Y Wen, K L Xiong, J P Liu, H B Wang, and H Yang, Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/25120001

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Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs

DOI: 10.1088/1674-4926/25120001

CSTR: 32376.14.1674-4926.25120001

1.
Suzhou Laboratory, Suzhou 215123, China
2.
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
3.
Suzhou Ganbright Optoelectronic Technology Co., Ltd., Suzhou 215153, China

More Information

Corresponding author: xiongkl@szlab.ac.cn
Received Date: 2025-12-01
Revised Date: 2026-12-31

Available Online: 2026-03-05

Abstract

Abstract

We demonstrate room-temperature pulsed lasing of two types of GaN-based surface emitting lasers (SEL) fabricated without epitaxial regrowth. We present a direct comparison between a circular grating (CGSEL) and a photonic crystal (PCSEL) design. The devices are realized by etching the photonic structures directly into the p-GaN cladding, and utilizing a patterned Indium Tin Oxide (ITO) top contact. Both designs exhibit lasing near 438 nm under pulsed current injection. The CGSEL, incorporating a central defect, achieves a low threshold current density (<1 kA/cm²) and a small divergence angle (≈0.15°) by coupling to a bandgap defect mode. In contrast, the PCSEL shows a higher threshold current density and lases on a 1D band-edge mode, resulting in a cross-shaped far-field pattern. These results confirm the regrowth-free method as a viable route for manufacturable GaN SELs. Crucially, the comparative study identifies the CGSEL defect-mode design as a more robust path toward high-performance lasing in low-confinement epitaxial structures.
- photonic crystal surface emitting laser,
- circular grating surface emitting laser,
- GaN,
- regrowth free,
- threshold current density

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References(18)