Hongbin Wang is a postdoctoral fellow at the School of Physics, Northeast Normal University. His research focuses on the Ga2O3 photodetectors.
Peng Li received his Ph.D. degree in Northeast Normal University. He is currently an associate professor of School of Physics, Northeast Normal University. His research focuses on the optoelectronic properties and devices of wide-bandgap oxide and nitride semiconductors.
Jiangang Ma received his Ph.D degree in Northeast Normal University. He is currently a professor of School of Physics, Northeast Normal University. His research focuses on the wide-bandgap semiconductor materials and optoelectronic devices.
Fig. 1.
(Color online) (a) Band diagram of the nBn unipolar barrier structure with a large conduction-band barrier, in which the photoinduced holes pass along the valence band while the electrons in the contact layer are impeded by the barrier layer. Inset: the corresponding band diagram of the nBn unipolar barrier under the flat-band condition. EF, EV and EC are the Fermi level, maximum valence band and minimum conduction band, respectively. (b) Band diagram of the pBp unipolar barrier structure with a large valence-band barrier, where the photoinduced electrons flow through the conduction band while the holes are impeded by the designed barrier layer. Inset: the corresponding band diagram under the flat-band condition[11].
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