Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes

Qiaozhi Zhang; Hanqing Liu; Sihao Su; Xiangjun Shang; Xiangbin Su; Donghai Wu; Chengao Yang; Dongwei Jiang; Yu Zhang; Yingqiang Xu; Haiqiao Ni; Zhichuan Niu

doi:10.1088/1674-4926/26010036

J. Semicond. > Just Accepted

ARTICLES

Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes

Qiaozhi Zhang^{1, 2}, Hanqing Liu^{1, 2}, Sihao Su^{1, 2}, Xiangjun Shang^{1, 2}, Xiangbin Su^{1, 2}, Donghai Wu^{1, 2}, Chengao Yang^{1, 2}, Dongwei Jiang^{1, 2}, Yu Zhang^{1, 2}, Yingqiang Xu^{1, 2,}, Haiqiao Ni^{1, 2,} and Zhichuan Niu^{1, 2,}

+ Author Affiliations

1. State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Author Bio:

Qiaozhi Zhang got his bachelor’s degree in 2023 from Shandong University. Now he is a master student at Institute of Semiconductors, Chinese Academy of Sciences under the supervision of Prof. Haiqiao Ni. His research focuses on single-photon source growth and devices for optical communications.

Yingqiang Xu received his doctoral degree from the Institute of Semiconductors, Chinese Academy of Sciences, China, in 2005.He is currently a Senior Researcher at the institute. His research focuses on the MBE growth of Sb-based infrared optoelectronic materials, as well as the design and fabrication of related devices.

Haiqiao Ni received B. E. and M. E. degrees in material science and engineering from Beijing University of Aeronautics and Astronautics in 1992 and 1995. He received Ph. D. degree in electrical engineering from National University of Singapore in 2002. In 2002, he joined Institute of Semiconductors, Chinese Academy of Sciences as a post-doctor and now as a researcher. His research interests include growth and characterization of InGaNAs(Sb) QWs, InAs QDs, metamorphic structures by MBE, devices for optical communications.

Zhichuan Niu is a researcher at the Institute of Semiconductors, Chinese Academy of Sciences, Chief Professor of Quantum Optoelectronics at the College of Material Science and Optoelectronics of the University of Chinese Academy of Sciences. His main research fields are compound semiconductor materials and quantum optoelectronic devices, semiconductor quantum dot quantum light source devices, near-infrared communication band quantum dot/quantum well lasers, and arsenic and antimony compound semiconductor optoelectronic devices.

Corresponding author: Yingqiang Xu, yingqxu@semi.ac.cn; Haiqiao Ni, nihq@semi.ac.cn; Zhichuan Niu, zcniu@semi.ac.cn

DOI: 10.1088/1674-4926/26010036CSTR: 32376.14.1674-4926.26010036

Abstract: Charged quantum dots (QD) coupled to micropillar cavities are key platforms for studying photon-spin interactions. However, most research involves quantum dots charged via external excitation, resulting in short charge lifetimes. We demonstrate a device where a quantum dot confines an extra electron through δ-doping and couples to a high Q-factor (about 11 000) micropillar cavity mode (CM). We propose a precise calibration process for the micropillar cavity to achieve coupling between the negatively charged exciton (X−) transitions and CM at low temperatures. Micro-photoluminescence (μPL) spectroscopy confirms X− transitions and their coupling with CM at 7K, with the coupled emission intensity enhanced about tenfold relative to the uncoupled state. The X− transitions and CM both show low spectral fluctuations at the change of polarization of incident light (X− 2.66 μeV, CM 3 μeV).

Key words: δ-doping, cavity mode, micropillar, InAs/GaAs quantum dots

References

[1]	Flamini F, Spagnolo N, Sciarrino F. Photonic quantum information processing: A review. Rep Prog Phys, 2019, 82(1): 016001 doi: 10.1088/1361-6633/aad5b2
[2]	Chen W L, Beck K M, Bücker R, et al. All-optical switch and transistor gated by one stored photon. Science, 2013, 341(6147): 768 doi: 10.1126/science.1238169
[3]	Gorniaczyk H, Tresp C, Schmidt J, et al. Single-photon transistor mediated by interstate Rydberg interactions. Phys Rev Lett, 2014, 113(5): 053601 doi: 10.1103/PhysRevLett.113.053601
[4]	Shomroni I, Rosenblum S, Lovsky Y, et al. All-optical routing of single photons by a one-atom switch controlled by a single photon. Science, 345(6199): 903
[5]	Hacker B, Welte S, Rempe G, et al. A photon–photon quantum gate based on a single atom in an optical resonator. Nature, 2016, 536(7615): 193 doi: 10.1038/nature18592
[6]	Bechler O, Borne A, Rosenblum S, et al. A passive photon–atom qubit swap operation. Nat Phys, 2018, 14(10): 996 doi: 10.1038/s41567-018-0241-6
[7]	Volz T, Reinhard A, Winger M, et al. Ultrafast all-optical switching by single photons. Nat Photonics, 2012, 6(9): 605 doi: 10.1038/nphoton.2012.181
[8]	Lodahl P, Mahmoodian S, Stobbe S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 2015, 87(2): 347 doi: 10.1103/RevModPhys.87.347
[9]	Sun S, Kim H, Solomon G S, et al. A quantum phase switch between a single solid-state spin and a photon. Nat Nanotechnol, 2016, 11(6): 539 doi: 10.1038/nnano.2015.334
[10]	Sun S, Kim H, Luo Z C, et al. A single-photon switch and transistor enabled by a solid-state quantum memory. Science, 2018, 361(6397): 57 doi: 10.1126/science.aat3581
[11]	Arnold C, Demory J, Loo V, et al. Macroscopic rotation of photon polarization induced by a single spin. Nat Commun, 2015, 6: 6236 doi: 10.1038/ncomms7236
[12]	Androvitsaneas P, Young A, Schneider C, et al. Macroscopic Kerr rotation from a bright negatively charged quantum dot in a low-Q micropillar cavity. Conference on Lasers and Electro-Optics (cleo), 2015: FF2B. 2
[13]	Androvitsaneas P, Young A B, Schneider C, et al. Charged quantum dot micropillar system for deterministic light-matter interactions. Phys Rev B, 2016, 93(24): 241409 doi: 10.1103/PhysRevB.93.241409
[14]	Hu C Y. Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity. Sci Rep, 2017, 7: 45582 doi: 10.1038/srep45582
[15]	Androvitsaneas P, Young A B, Lennon J M, et al. Efficient quantum photonic phase shift in a low Q-factor regime. ACS Photonics, 2019, 6(2): 429 doi: 10.1021/acsphotonics.8b01380
[16]	Wells L M, Kalliakos S, Villa B, et al. Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity. Phys Rev Appl, 2019, 11(6): 061001 doi: 10.1103/PhysRevApplied.11.061001
[17]	Mehdi E, Gundín M, Millet C, et al. Giant optical polarisation rotations induced by a single quantum dot spin. Nat Commun, 2024, 15: 598 doi: 10.1038/s41467-023-44651-8
[18]	Reitzenstein S, Hofmann C, Gorbunov A, et al. AlAs/GaAs micropillar cavities with quality factors exceeding 150.000. Appl Phys Lett, 2007, 90(25): 251109
[19]	Schneider C, Gold P, Reitzenstein S, et al. Quantum dot micropillar cavities with quality factors exceeding 250, 000. Appl Phys B, 2016, 122(1): 19 doi: 10.1007/s00340-015-6283-x
[20]	Press D, De Greve K, McMahon P L, et al. Ultrafast optical spin echo in a single quantum dot. Nat Photonics, 2010, 4(6): 367 doi: 10.1038/nphoton.2010.83
[21]	Chekhovich E A, Ulhaq A, Zallo E, et al. Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots. Nat Mater, 2017, 16(10): 982 doi: 10.1038/nmat4959
[22]	Li S L, Chen Y, Shang X J, et al. Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode. Nanoscale Res Lett, 2020, 15(1): 145 doi: 10.1186/s11671-020-03358-1
[23]	Shang X J, Xu J X, Ma B, et al. Proper in deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots. Chin Phys B, 2016, 25(10): 107805 doi: 10.1088/1674-1056/25/10/107805
[24]	Alexander R R, Childs D T D, Agarwal H, et al. Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers. IEEE J Quantum Electron, 2007, 43(12): 1129 doi: 10.1109/JQE.2007.907213
[25]	Purcell E M. Spontaneous emission probabilities at radio frequencies. Confined Electrons and Photons, 1995: 839
[26]	Chen Y, Zhang J X, Zopf M, et al. Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots. Nat Commun, 2016, 7: 10387 doi: 10.1038/ncomms10387
[27]	Regelman D, Dekel E, Gershoni D, et al. Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states. Phys Rev B, 2001, 64(16): 165301 doi: 10.1103/PhysRevB.64.165301

Fig. 1. (Color online) (a) Schematic structures of the formal sample. (b) The reflection spectra at room temperature (T = 300K) of the first-grown sample and the next-grown sample. (c) Scanning electron microscope (SEM) image of the micropillar cavity.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) A cavity mode at 11K with Q~11000.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) μPL spectra of X and X− transitions both uncalibrated to a cavity mode at 17K. (b) μPL spectra of X− transition calibrated to a cavity mode at 7.5K. All colored lines are Lorentz fittings. (c) Time-resolved measurements of the uncalibrated sample and the calibrated sample.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Peak intensity as a function of excitation power. (b) Peak energy difference of X and X− transitions as a function of Rotation. (c) Peak energy difference of the cavity mode as a function of Rotation.

DownLoad: Full-Size Img PowerPoint

[1]	Flamini F, Spagnolo N, Sciarrino F. Photonic quantum information processing: A review. Rep Prog Phys, 2019, 82(1): 016001 doi: 10.1088/1361-6633/aad5b2
[2]	Chen W L, Beck K M, Bücker R, et al. All-optical switch and transistor gated by one stored photon. Science, 2013, 341(6147): 768 doi: 10.1126/science.1238169
[3]	Gorniaczyk H, Tresp C, Schmidt J, et al. Single-photon transistor mediated by interstate Rydberg interactions. Phys Rev Lett, 2014, 113(5): 053601 doi: 10.1103/PhysRevLett.113.053601
[4]	Shomroni I, Rosenblum S, Lovsky Y, et al. All-optical routing of single photons by a one-atom switch controlled by a single photon. Science, 345(6199): 903
[5]	Hacker B, Welte S, Rempe G, et al. A photon–photon quantum gate based on a single atom in an optical resonator. Nature, 2016, 536(7615): 193 doi: 10.1038/nature18592
[6]	Bechler O, Borne A, Rosenblum S, et al. A passive photon–atom qubit swap operation. Nat Phys, 2018, 14(10): 996 doi: 10.1038/s41567-018-0241-6
[7]	Volz T, Reinhard A, Winger M, et al. Ultrafast all-optical switching by single photons. Nat Photonics, 2012, 6(9): 605 doi: 10.1038/nphoton.2012.181
[8]	Lodahl P, Mahmoodian S, Stobbe S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 2015, 87(2): 347 doi: 10.1103/RevModPhys.87.347
[9]	Sun S, Kim H, Solomon G S, et al. A quantum phase switch between a single solid-state spin and a photon. Nat Nanotechnol, 2016, 11(6): 539 doi: 10.1038/nnano.2015.334
[10]	Sun S, Kim H, Luo Z C, et al. A single-photon switch and transistor enabled by a solid-state quantum memory. Science, 2018, 361(6397): 57 doi: 10.1126/science.aat3581
[11]	Arnold C, Demory J, Loo V, et al. Macroscopic rotation of photon polarization induced by a single spin. Nat Commun, 2015, 6: 6236 doi: 10.1038/ncomms7236
[12]	Androvitsaneas P, Young A, Schneider C, et al. Macroscopic Kerr rotation from a bright negatively charged quantum dot in a low-Q micropillar cavity. Conference on Lasers and Electro-Optics (cleo), 2015: FF2B. 2
[13]	Androvitsaneas P, Young A B, Schneider C, et al. Charged quantum dot micropillar system for deterministic light-matter interactions. Phys Rev B, 2016, 93(24): 241409 doi: 10.1103/PhysRevB.93.241409
[14]	Hu C Y. Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity. Sci Rep, 2017, 7: 45582 doi: 10.1038/srep45582
[15]	Androvitsaneas P, Young A B, Lennon J M, et al. Efficient quantum photonic phase shift in a low Q-factor regime. ACS Photonics, 2019, 6(2): 429 doi: 10.1021/acsphotonics.8b01380
[16]	Wells L M, Kalliakos S, Villa B, et al. Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity. Phys Rev Appl, 2019, 11(6): 061001 doi: 10.1103/PhysRevApplied.11.061001
[17]	Mehdi E, Gundín M, Millet C, et al. Giant optical polarisation rotations induced by a single quantum dot spin. Nat Commun, 2024, 15: 598 doi: 10.1038/s41467-023-44651-8
[18]	Reitzenstein S, Hofmann C, Gorbunov A, et al. AlAs/GaAs micropillar cavities with quality factors exceeding 150.000. Appl Phys Lett, 2007, 90(25): 251109
[19]	Schneider C, Gold P, Reitzenstein S, et al. Quantum dot micropillar cavities with quality factors exceeding 250, 000. Appl Phys B, 2016, 122(1): 19 doi: 10.1007/s00340-015-6283-x
[20]	Press D, De Greve K, McMahon P L, et al. Ultrafast optical spin echo in a single quantum dot. Nat Photonics, 2010, 4(6): 367 doi: 10.1038/nphoton.2010.83
[21]	Chekhovich E A, Ulhaq A, Zallo E, et al. Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots. Nat Mater, 2017, 16(10): 982 doi: 10.1038/nmat4959
[22]	Li S L, Chen Y, Shang X J, et al. Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode. Nanoscale Res Lett, 2020, 15(1): 145 doi: 10.1186/s11671-020-03358-1
[23]	Shang X J, Xu J X, Ma B, et al. Proper in deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots. Chin Phys B, 2016, 25(10): 107805 doi: 10.1088/1674-1056/25/10/107805
[24]	Alexander R R, Childs D T D, Agarwal H, et al. Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers. IEEE J Quantum Electron, 2007, 43(12): 1129 doi: 10.1109/JQE.2007.907213
[25]	Purcell E M. Spontaneous emission probabilities at radio frequencies. Confined Electrons and Photons, 1995: 839
[26]	Chen Y, Zhang J X, Zopf M, et al. Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots. Nat Commun, 2016, 7: 10387 doi: 10.1038/ncomms10387
[27]	Regelman D, Dekel E, Gershoni D, et al. Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states. Phys Rev B, 2001, 64(16): 165301 doi: 10.1103/PhysRevB.64.165301

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Received: 23 January 2026 Revised: 23 March 2026 Online: Accepted Manuscript: 07 April 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Qiaozhi Zhang, Hanqing Liu, Sihao Su, Xiangjun Shang, Xiangbin Su, Donghai Wu, Chengao Yang, Dongwei Jiang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu. Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26010036 ****Q Z Zhang, H Q Liu, S H Su, X J Shang, X B Su, D H Wu, C G Yang, D W Jiang, Y Zhang, Y Q Xu, H Q Ni, and Z C Niu, Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26010036

Citation:

Q Z Zhang, H Q Liu, S H Su, X J Shang, X B Su, D H Wu, C G Yang, D W Jiang, Y Zhang, Y Q Xu, H Q Ni, and Z C Niu, Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26010036

Citation:

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Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes

DOI: 10.1088/1674-4926/26010036

CSTR: 32376.14.1674-4926.26010036

Qiaozhi Zhang^{1, 2},
Hanqing Liu^{1, 2},
Sihao Su^{1, 2},
Xiangjun Shang^{1, 2},
Xiangbin Su^{1, 2},
Donghai Wu^{1, 2},
Chengao Yang^{1, 2},
Dongwei Jiang^{1, 2},
Yu Zhang^{1, 2},
Yingqiang Xu^{1, 2,},
Haiqiao Ni^{1, 2,},
Zhichuan Niu^{1, 2,}

1.
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Qiaozhi Zhang got his bachelor’s degree in 2023 from Shandong University. Now he is a master student at Institute of Semiconductors, Chinese Academy of Sciences under the supervision of Prof. Haiqiao Ni. His research focuses on single-photon source growth and devices for optical communications
Yingqiang Xu received his doctoral degree from the Institute of Semiconductors, Chinese Academy of Sciences, China, in 2005.He is currently a Senior Researcher at the institute. His research focuses on the MBE growth of Sb-based infrared optoelectronic materials, as well as the design and fabrication of related devices
Haiqiao Ni received B. E. and M. E. degrees in material science and engineering from Beijing University of Aeronautics and Astronautics in 1992 and 1995. He received Ph. D. degree in electrical engineering from National University of Singapore in 2002. In 2002, he joined Institute of Semiconductors, Chinese Academy of Sciences as a post-doctor and now as a researcher. His research interests include growth and characterization of InGaNAs(Sb) QWs, InAs QDs, metamorphic structures by MBE, devices for optical communications
Zhichuan Niu is a researcher at the Institute of Semiconductors, Chinese Academy of Sciences, Chief Professor of Quantum Optoelectronics at the College of Material Science and Optoelectronics of the University of Chinese Academy of Sciences. His main research fields are compound semiconductor materials and quantum optoelectronic devices, semiconductor quantum dot quantum light source devices, near-infrared communication band quantum dot/quantum well lasers, and arsenic and antimony compound semiconductor optoelectronic devices
Corresponding author: yingqxu@semi.ac.cn; nihq@semi.ac.cn; zcniu@semi.ac.cn
Received Date: 2026-01-23
Revised Date: 2026-03-23

Available Online: 2026-04-07

Abstract

Abstract

Charged quantum dots (QD) coupled to micropillar cavities are key platforms for studying photon-spin interactions. However, most research involves quantum dots charged via external excitation, resulting in short charge lifetimes. We demonstrate a device where a quantum dot confines an extra electron through δ-doping and couples to a high Q-factor (about 11 000) micropillar cavity mode (CM). We propose a precise calibration process for the micropillar cavity to achieve coupling between the negatively charged exciton (X−) transitions and CM at low temperatures. Micro-photoluminescence (μPL) spectroscopy confirms X− transitions and their coupling with CM at 7K, with the coupled emission intensity enhanced about tenfold relative to the uncoupled state. The X− transitions and CM both show low spectral fluctuations at the change of polarization of incident light (X− 2.66 μeV, CM 3 μeV).
- δ-doping,
- cavity mode,
- micropillar,
- InAs/GaAs quantum dots

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References(27)