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Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors

Zefu Zhao1, Kai-Jhih Gan2, Qian Cheng Yang2, Shenglin Pan2, Jiang Wei2, Shaohao Wang1, 2, Tiaoyang Li1, 2, Shao Teng Wu3 and Dun-Bao Ruan1, 2,

+ Author Affiliations

 Corresponding author: Dun-Bao Ruan, rsduty@gmail.com

DOI: 10.1088/1674-4926/26040002CSTR: 32376.14.1674-4926.26040002

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Abstract: Achieving simultaneous phase stabilization and ultralow leakage remains a fundamental challenge for ZrO2-based high-k dielectrics. This work demonstrates high-performance 5.7 nm ZrO2-based metal-insulator-metal capacitors through coordinated interfacial engineering and defect passivation. The AlZrO alloy interfacial layer preserves lattice coherence and provides an interfacial barrier while stabilizing the anti-ferroelectric tetragonal phase ZrO2, enabling an equivalent oxide thickness of 0.89 nm. Subsequent in-situ remote O2 plasma treatment passivates oxygen vacancies via radical oxidation without inducing plasma damage. As a result, the capacitors achieve an ultralow leakage current density of 3×10−10 A/cm2 at 1 V, a breakdown voltage exceeding 5 V, and a projected 10-year operating voltage above 2.4 V based on time-dependent dielectric breakdown extrapolation. All processes are conducted below 350 °C, ensuring back-end-of-line (BEOL) compatibility. These results demonstrate a pathway toward simultaneous dielectric constant enhancement, leakage suppression, and long-term reliability in ultrathin ZrO2-based high-k dielectrics.

Keywords: anti-ferroelectricity, high-k dielectrics, tetragonal phase ZrO2, AlZrO alloy interfacial layer, remote O2 plasma treatment



[1]
Miao S, Tang X, Li Y, et al. Oxidation of TiN Interface and Improvement of AlN Intercalation of ZrO2 Capacitor in DRAM. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Year: 1–3
[2]
Zhao Z, Chen Y-R, Wang J-F, et al. Engineering Hf0.5Zr0.5O2 ferroelectric/anti-ferroelectric phases with oxygen vacancy and interface energy achieving high remanent polarization and dielectric constants. IEEE Electron Device Letters, 2022, 43(4): 553-556 doi: 10.1109/LED.2022.3149309
[3]
Kim S E, Sung J Y, Yun Y, et al. Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review. Current Applied Physics, 2024: 648-15
[4]
Gonzalez Y, Hadj Youssef A, Dörfler A, et al. Competing tunneling conduction mechanisms in oxygen deficient Hf0. 5Zr0. 5O2. Applied Physics Letters, 2021, 119(13):
[5]
Swerts J, Popovici M, Kaczer B, et al. Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications. IEEE electron device letters, 2014, 35(7): 753-755 doi: 10.1109/LED.2014.2322632
[6]
Lin S, Chiang K, Chin A, et al. High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators. IEEE electron device letters, 2009, 30(7): 715-717 doi: 10.1109/LED.2009.2022775
[7]
Lim H, Choi J H, Cho G, et al. Study of metal–dielectric interface for improving electrical properties and reliability of DRAM capacitor. Advanced Materials Technologies, 2023, 8(20): 2200412 doi: 10.1002/admt.202200412
[8]
Lu T, Duan Z, Zhang L, et al. Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO2 nanosheets. Journal of Semiconductors, 2025, 46(4): 042703 doi: 10.1088/1674-4926/24090034
[9]
Song Y, Jiang P, Xu P, et al. Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies. Journal of Semiconductors, 2025, 46(6): 061302 doi: 10.1088/1674-4926/24100010
[10]
Han K, Wang X, Yang H, et al. Electric dipole formation at high-k dielectric/SiO2 interface. Journal of Semiconductors, 2015, 36(3): 036004 doi: 10.1088/1674-4926/36/3/036004
[11]
Yuan P, Chen Y, Chai L, et al. On the relationship between imprint and reliability in Hf0. 5Zr0. 5O2 based ferroelectric random access memory. Journal of Semiconductors, 2024, 45(4): 042301
[12]
Wang Y, Tao L, Guzman R, et al. A stable rhombohedral phase in ferroelectric Hf (Zr)1+ x O2 capacitor with ultralow coercive field. Science, 2023, 381(6657): 558-563 doi: 10.1126/science.adf6137
[13]
Lee S, Kim J, Won B, et al. Evaluation of electrical characteristics through band alignment and defect analysis of ultrathin Pt/ZrO2–Al2O3–ZrO2/TiN DRAM metal-insulator-metal capacitors. Journal of Vacuum Science & Technology A, 2025, 43(4):
[14]
Shin H, Choi H, Lim J, et al. Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties. Journal of Asian Ceramic Societies, 2022, 10(3): 649-659 doi: 10.1080/21870764.2022.2101216
[15]
Filatova E O, Konashuk A S. Interpretation of the changing the band gap of Al2O3 depending on its crystalline form: connection with different local symmetries. The Journal of Physical Chemistry C, 2015, 119(35): 20755-20761 doi: 10.1021/acs.jpcc.5b06843
[16]
Jiang H, Bhuiyan M A, Liu Z, et al. A study of BEOL processed Hf0.5Zr0.5 O2-based ferroelectric capacitors and their potential for automotive applications. 2020 IEEE International Memory Workshop (IMW), Year: 1–4
[17]
Song H, Kim D, Kang S, et al. Al2O3 blocking layer inserted ZrO2 metal-insulator-metal capacitor for the improved electrical and interfacial properties. Thin Solid Films, 2020: 713138368
[18]
Colbea C, Avram D, Cojocaru B, et al. Full tetragonal phase stabilization in ZrO2 nanoparticles using wet impregnation: Interplay of host structure, dopant concentration and sensitivity of characterization technique. Nanomaterials, 2018, 8(12): 988 doi: 10.3390/nano8120988
[19]
Park M H, Lee Y H, Kim H J, et al. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films. Nanoscale, 2018, 10(2): 716 doi: 10.1039/C7NR06342C
[20]
Materlik R, Künneth C, Kersch A. The origin of ferroelectricity in Hf1− xZrxO2: A computational investigation and a surface energy model. Journal of Applied Physics, 2015, 117(13):
[21]
Reyes-Lillo S E, Garrity K F, Rabe K M. Antiferroelectricity in thin-film ZrO2 from first principles. Physical Review B, 2014, 90(14): 140103 doi: 10.1103/PhysRevB.90.140103
[22]
Chen Y-R, Zhao Z, Tu C-T, et al. ION enhancement of Ge0.98Si0.02 nanowire nFETs by high-κ dielectrics. IEEE Electron Device Letters, 2022, 43(10): 1601
[23]
Klages C-P, Bröcker L, Betz M L, et al. Atomic-oxygen number densities in Ar-O2 DBDs and post-discharges with small initial O2 fractions: plug-flow model and experiments. Plasma Chemistry and Plasma Processing, 2023, 43(1): 285-314 doi: 10.1007/s11090-022-10293-9
[24]
Jiang J, Bruggeman P J. Ion fluxes and memory effects in an Ar–O2 modulated radiofrequency-driven atmospheric pressure plasma jet. Plasma Sources Science and Technology, 2021, 30(10): 105007 doi: 10.1088/1361-6595/ac2045
[25]
Kim J, Hwang I, Kim B, et al. Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM. Nanomaterials, 2025, 15(11): 783 doi: 10.3390/nano15110783
[26]
Xie C, Huang Z-Y, Huang Z-Y, et al. Thin Ga2O3 insertion layer for phase structure and electrical property evolutions in ferroelectric Hf0.5Zr0.5O2 capacitors. Applied Physics Letters, 2025, 127(26):
[27]
Zhao Z, Liao Y-T, Chen Y-R, et al. C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance. IEEE Transactions on Electron Devices, 2024, 72(1): 222
[28]
Kwon H-M, Kwon S-K, Jeong K-S, et al. A correlation between oxygen vacancies and reliability characteristics in a single zirconium oxide metal-insulator-metal capacitor. IEEE Transactions on Electron Devices, 2014, 61(8): 2619 doi: 10.1109/TED.2014.2326423
[29]
Park S-U, Kang C-Y, Kwon H-M, et al. Analysis of reliability characteristics of high capacitance density MIM capacitors with SiO2–HfO2–SiO2 dielectrics. Microelectronic engineering, 2011, 88(12): 3389 doi: 10.1016/j.mee.2010.01.012
[30]
Park S-U, Kwon H-M, Han I-S, et al. Comparison of Multilayer Dielectric Thin Films for Future Metal-insulator-metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2. Japanese Journal of Applied Physics, 2011, 50(10S): 10PB06
[31]
Chung H K, Jeon J, Kim H, et al. Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm. Applied Surface Science, 2024: 664160243
[32]
Das D, Buyantogtokh B, Gaddam V, et al. Sub 5 Å-EOT HfₓZr1–xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process. IEEE Transactions on Electron Devices, 2021, 69(1): 103 doi: 10.1109/ted.2021.3131403
[33]
Aarik J, Hudec B, Hušeková K, et al. Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semiconductor Science and Technology, 2012, 27(7): 074007 doi: 10.1088/0268-1242/27/7/074007
[34]
Cheng C-H, Lin S, Jhou K, et al. High Density and Low Leakage Current in TiO2 MIM Capacitors Processed at 300 oC. IEEE electron device letters, 2008, 29(8): 845 doi: 10.1109/LED.2008.2000833
[35]
Cheng C, Pan H, Yang H, et al. Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode. IEEE electron device letters, 2007, 28(12): 1095 doi: 10.1109/LED.2007.909612
[36]
Kim T K, Paik H, Shin J, et al. Al-Doped Rutile TiO2 with Y2O3–ZrO2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors. ACS Applied Electronic Materials, 2026, 8(5): 2174 doi: 10.1021/acsaelm.6c00060
[37]
Lin C-C, Wu Y-H, Jiang R-S, et al. MIM Capacitors Based on ZrTiOx/BaZryTi1−yO3 Featuring Record-Low VCC and Excellent Reliability. IEEE electron device letters, 2013, 34(11): 1418
[38]
Lutzer B, Simsek S, Zimmermann C, et al. Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers. Journal of Applied Physics, 2016, 119(12):
[39]
Mukhopadhyay P, Fletcher I, Couvertier Z C, et al. High-performance HfO2/Al2O3 superlattice MIM capacitor in a 200 mm high-volume batch-ALD platform. IEEE Transactions on Electron Devices, 2024, 71(3): 2036 doi: 10.1109/TED.2024.3353702
[40]
Kim S M, Nyugen T M H, Oh J, et al. Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration. 2021 IEEE International Reliability Physics Symposium (IRPS), Year: 1–6
[41]
Kim J H, Lee S W, Shin Y, et al. Effect of increasing deposition temperature of atomic-layer–deposited ZrO2 thin films: improvement of leakage-current properties. Ceramics International, 2025,
[42]
Weinreich W, Shariq A, Seidel K, et al. Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes. Journal of Vacuum Science & Technology B, 2013, 31(1):
[43]
Nie X, Ma D, Ma F, et al. Thermal stability, structural and electrical characteristics of the modulated HfO2/Al2O3 films fabricated by atomic layer deposition. Journal of Materials Science, 2017, 52(19): 11524-11536 doi: 10.1007/s10853-017-1293-1
Fig. 1.  (Color online) The schematic of MIM capacitors with (a) ZAZ, (b) ZrO2/AlZrO IL, and (c) RO treatment dielectric stacks. (d) Detailed process flow of MIM capacitors.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) HAADF, (b) TEM, and (c) SAED images of capacitors using ZAZ stacks. (d) HAADF, (e) TEM, and (f) SAED images of capacitors using ZrO2/AlZrO IL stacks. The formation of the ZrO2 t-phase dominant phase in ZrO2/AlZrO IL stacks.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) The schematic diagram of the crystallization in (a) ZAZ and (b) ZrO2/AlZrO capacitors.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) Bipolar C–V, (b) P–V, and (c) I–V curves of MIM capacitors.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) (a) Weibull plot of breakdown voltage and (b) Applied DC voltage extrapolation for long lifetime at 63.2% failure, compared to reported works.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) (a) XPS O 1s spectrum and (b) AFM images of ZrO2/AlZrO alloy IL capacitor before and after RO treatment. The RMS roughness is 0.28 nm before RO treatment and 0.26 nm after RO treatment.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) DFT model and simulated dielectric constant of AlZrO.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  (Color online) Benchmarks of leakage current, EOT, and breakdown voltage

DownLoad: Full-Size Img PowerPoint
[1]
Miao S, Tang X, Li Y, et al. Oxidation of TiN Interface and Improvement of AlN Intercalation of ZrO2 Capacitor in DRAM. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Year: 1–3
[2]
Zhao Z, Chen Y-R, Wang J-F, et al. Engineering Hf0.5Zr0.5O2 ferroelectric/anti-ferroelectric phases with oxygen vacancy and interface energy achieving high remanent polarization and dielectric constants. IEEE Electron Device Letters, 2022, 43(4): 553-556 doi: 10.1109/LED.2022.3149309
[3]
Kim S E, Sung J Y, Yun Y, et al. Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review. Current Applied Physics, 2024: 648-15
[4]
Gonzalez Y, Hadj Youssef A, Dörfler A, et al. Competing tunneling conduction mechanisms in oxygen deficient Hf0. 5Zr0. 5O2. Applied Physics Letters, 2021, 119(13):
[5]
Swerts J, Popovici M, Kaczer B, et al. Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications. IEEE electron device letters, 2014, 35(7): 753-755 doi: 10.1109/LED.2014.2322632
[6]
Lin S, Chiang K, Chin A, et al. High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators. IEEE electron device letters, 2009, 30(7): 715-717 doi: 10.1109/LED.2009.2022775
[7]
Lim H, Choi J H, Cho G, et al. Study of metal–dielectric interface for improving electrical properties and reliability of DRAM capacitor. Advanced Materials Technologies, 2023, 8(20): 2200412 doi: 10.1002/admt.202200412
[8]
Lu T, Duan Z, Zhang L, et al. Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO2 nanosheets. Journal of Semiconductors, 2025, 46(4): 042703 doi: 10.1088/1674-4926/24090034
[9]
Song Y, Jiang P, Xu P, et al. Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies. Journal of Semiconductors, 2025, 46(6): 061302 doi: 10.1088/1674-4926/24100010
[10]
Han K, Wang X, Yang H, et al. Electric dipole formation at high-k dielectric/SiO2 interface. Journal of Semiconductors, 2015, 36(3): 036004 doi: 10.1088/1674-4926/36/3/036004
[11]
Yuan P, Chen Y, Chai L, et al. On the relationship between imprint and reliability in Hf0. 5Zr0. 5O2 based ferroelectric random access memory. Journal of Semiconductors, 2024, 45(4): 042301
[12]
Wang Y, Tao L, Guzman R, et al. A stable rhombohedral phase in ferroelectric Hf (Zr)1+ x O2 capacitor with ultralow coercive field. Science, 2023, 381(6657): 558-563 doi: 10.1126/science.adf6137
[13]
Lee S, Kim J, Won B, et al. Evaluation of electrical characteristics through band alignment and defect analysis of ultrathin Pt/ZrO2–Al2O3–ZrO2/TiN DRAM metal-insulator-metal capacitors. Journal of Vacuum Science & Technology A, 2025, 43(4):
[14]
Shin H, Choi H, Lim J, et al. Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties. Journal of Asian Ceramic Societies, 2022, 10(3): 649-659 doi: 10.1080/21870764.2022.2101216
[15]
Filatova E O, Konashuk A S. Interpretation of the changing the band gap of Al2O3 depending on its crystalline form: connection with different local symmetries. The Journal of Physical Chemistry C, 2015, 119(35): 20755-20761 doi: 10.1021/acs.jpcc.5b06843
[16]
Jiang H, Bhuiyan M A, Liu Z, et al. A study of BEOL processed Hf0.5Zr0.5 O2-based ferroelectric capacitors and their potential for automotive applications. 2020 IEEE International Memory Workshop (IMW), Year: 1–4
[17]
Song H, Kim D, Kang S, et al. Al2O3 blocking layer inserted ZrO2 metal-insulator-metal capacitor for the improved electrical and interfacial properties. Thin Solid Films, 2020: 713138368
[18]
Colbea C, Avram D, Cojocaru B, et al. Full tetragonal phase stabilization in ZrO2 nanoparticles using wet impregnation: Interplay of host structure, dopant concentration and sensitivity of characterization technique. Nanomaterials, 2018, 8(12): 988 doi: 10.3390/nano8120988
[19]
Park M H, Lee Y H, Kim H J, et al. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films. Nanoscale, 2018, 10(2): 716 doi: 10.1039/C7NR06342C
[20]
Materlik R, Künneth C, Kersch A. The origin of ferroelectricity in Hf1− xZrxO2: A computational investigation and a surface energy model. Journal of Applied Physics, 2015, 117(13):
[21]
Reyes-Lillo S E, Garrity K F, Rabe K M. Antiferroelectricity in thin-film ZrO2 from first principles. Physical Review B, 2014, 90(14): 140103 doi: 10.1103/PhysRevB.90.140103
[22]
Chen Y-R, Zhao Z, Tu C-T, et al. ION enhancement of Ge0.98Si0.02 nanowire nFETs by high-κ dielectrics. IEEE Electron Device Letters, 2022, 43(10): 1601
[23]
Klages C-P, Bröcker L, Betz M L, et al. Atomic-oxygen number densities in Ar-O2 DBDs and post-discharges with small initial O2 fractions: plug-flow model and experiments. Plasma Chemistry and Plasma Processing, 2023, 43(1): 285-314 doi: 10.1007/s11090-022-10293-9
[24]
Jiang J, Bruggeman P J. Ion fluxes and memory effects in an Ar–O2 modulated radiofrequency-driven atmospheric pressure plasma jet. Plasma Sources Science and Technology, 2021, 30(10): 105007 doi: 10.1088/1361-6595/ac2045
[25]
Kim J, Hwang I, Kim B, et al. Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM. Nanomaterials, 2025, 15(11): 783 doi: 10.3390/nano15110783
[26]
Xie C, Huang Z-Y, Huang Z-Y, et al. Thin Ga2O3 insertion layer for phase structure and electrical property evolutions in ferroelectric Hf0.5Zr0.5O2 capacitors. Applied Physics Letters, 2025, 127(26):
[27]
Zhao Z, Liao Y-T, Chen Y-R, et al. C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance. IEEE Transactions on Electron Devices, 2024, 72(1): 222
[28]
Kwon H-M, Kwon S-K, Jeong K-S, et al. A correlation between oxygen vacancies and reliability characteristics in a single zirconium oxide metal-insulator-metal capacitor. IEEE Transactions on Electron Devices, 2014, 61(8): 2619 doi: 10.1109/TED.2014.2326423
[29]
Park S-U, Kang C-Y, Kwon H-M, et al. Analysis of reliability characteristics of high capacitance density MIM capacitors with SiO2–HfO2–SiO2 dielectrics. Microelectronic engineering, 2011, 88(12): 3389 doi: 10.1016/j.mee.2010.01.012
[30]
Park S-U, Kwon H-M, Han I-S, et al. Comparison of Multilayer Dielectric Thin Films for Future Metal-insulator-metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2. Japanese Journal of Applied Physics, 2011, 50(10S): 10PB06
[31]
Chung H K, Jeon J, Kim H, et al. Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm. Applied Surface Science, 2024: 664160243
[32]
Das D, Buyantogtokh B, Gaddam V, et al. Sub 5 Å-EOT HfₓZr1–xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process. IEEE Transactions on Electron Devices, 2021, 69(1): 103 doi: 10.1109/ted.2021.3131403
[33]
Aarik J, Hudec B, Hušeková K, et al. Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semiconductor Science and Technology, 2012, 27(7): 074007 doi: 10.1088/0268-1242/27/7/074007
[34]
Cheng C-H, Lin S, Jhou K, et al. High Density and Low Leakage Current in TiO2 MIM Capacitors Processed at 300 oC. IEEE electron device letters, 2008, 29(8): 845 doi: 10.1109/LED.2008.2000833
[35]
Cheng C, Pan H, Yang H, et al. Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode. IEEE electron device letters, 2007, 28(12): 1095 doi: 10.1109/LED.2007.909612
[36]
Kim T K, Paik H, Shin J, et al. Al-Doped Rutile TiO2 with Y2O3–ZrO2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors. ACS Applied Electronic Materials, 2026, 8(5): 2174 doi: 10.1021/acsaelm.6c00060
[37]
Lin C-C, Wu Y-H, Jiang R-S, et al. MIM Capacitors Based on ZrTiOx/BaZryTi1−yO3 Featuring Record-Low VCC and Excellent Reliability. IEEE electron device letters, 2013, 34(11): 1418
[38]
Lutzer B, Simsek S, Zimmermann C, et al. Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers. Journal of Applied Physics, 2016, 119(12):
[39]
Mukhopadhyay P, Fletcher I, Couvertier Z C, et al. High-performance HfO2/Al2O3 superlattice MIM capacitor in a 200 mm high-volume batch-ALD platform. IEEE Transactions on Electron Devices, 2024, 71(3): 2036 doi: 10.1109/TED.2024.3353702
[40]
Kim S M, Nyugen T M H, Oh J, et al. Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration. 2021 IEEE International Reliability Physics Symposium (IRPS), Year: 1–6
[41]
Kim J H, Lee S W, Shin Y, et al. Effect of increasing deposition temperature of atomic-layer–deposited ZrO2 thin films: improvement of leakage-current properties. Ceramics International, 2025,
[42]
Weinreich W, Shariq A, Seidel K, et al. Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes. Journal of Vacuum Science & Technology B, 2013, 31(1):
[43]
Nie X, Ma D, Ma F, et al. Thermal stability, structural and electrical characteristics of the modulated HfO2/Al2O3 films fabricated by atomic layer deposition. Journal of Materials Science, 2017, 52(19): 11524-11536 doi: 10.1007/s10853-017-1293-1

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    Received: 01 April 2026 Revised: 01 June 2026 Online: Uncorrected proof: 23 June 2026

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      Zefu Zhao, Kai-Jhih Gan, Qian Cheng Yang, Shenglin Pan, Jiang Wei, Shaohao Wang, Tiaoyang Li, Shao Teng Wu, Dun-Bao Ruan. Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26040002 ****Z F Zhao, K Gan, Q C Yang, S L Pan, J Wei, S H Wang, T Y Li, S T Wu, and D - B Ruan, Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040002
      Citation:
      Zefu Zhao, Kai-Jhih Gan, Qian Cheng Yang, Shenglin Pan, Jiang Wei, Shaohao Wang, Tiaoyang Li, Shao Teng Wu, Dun-Bao Ruan. Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26040002 ****
      Z F Zhao, K Gan, Q C Yang, S L Pan, J Wei, S H Wang, T Y Li, S T Wu, and D - B Ruan, Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040002
      shu

      Interfacial and defect engineering enable sub-1nm equivalent oxide thickness with 3 × 10−10 A/cm2 ultralow leakage in ZrO2-based capacitors

      DOI: 10.1088/1674-4926/26040002
      CSTR: 32376.14.1674-4926.26040002
      • 1.

        College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

      • 2.

        FZU−Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Fuzhou University, Jinjiang 362251, China

      • 3.

        State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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      • Zefu Zhao received his B.S. degree from Beijing Institute of Technology in 2018 and his Ph.D. degree from National Taiwan University in 2024. He joined Fuzhou University in 2025. His research interests include atomic layer deposition of high-k materials, GeSi gate-all-around field-effect transistors, and thin-film transistors
      • Kai-Jhih Gan received the Ph.D. degree from the Institute of Electronics Engineering, National Chiao Tung University, Taiwan, in 2021. He is currently an Assistant Professor with the School of Advanced Manufacturing, Fuzhou University, China. His research interests include thin-film transistors, nonvolatile memory devices, supercritical-fluid treatment, and biosensors
      • Dun-Bao Ruan received the B.S. degree from the University of Electronic Science and Technology of China, the M.S. degree from National Tsing Hua University, and Ph.D. degrees from National Chiao Tung University and National Tsing Hua University. He is currently a Professor and Doctoral Supervisor. His research focuses on semiconductor micro/nano devices, Ge-based multi-gate devices, oxide thin-film devices, and 3D monolithic integration
      • Corresponding author: rsduty@gmail.com
      • Received Date: 2026-04-01
      • Revised Date: 2026-06-01
        • Available Online: 2026-06-23

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