Fig. 1.
(Color online) Comparison of HBM DRAM, flash memory and the proposed single-electron memory in terms of store electrons, threshold-voltage shift of one electron, and program energy.
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Shushen Li. One Electron, One Memory State[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26070031
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S S Li, One Electron, One Memory State[J]. J. Semicond., 2026, 47(9): 090101 doi: 10.1088/1674-4926/26070031
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One Electron, One Memory StateWhen the smallest unit of charge becomes a reliable unit of memory
DOI: 10.1088/1674-4926/26070031
CSTR: 32376.14.1674-4926.26070031
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Shushen Li, Professor at the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Academician of the Chinese Academy of Sciences. His research interests include semiconductor device physics - Corresponding author: sslee@semi.ac.cn
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References
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