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Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition

Xuejian Ma1, Zunfa Wang1, Chao Chen1, Zongpeng Ma1, Yue Tang1, Hongmei Jing2, Jiangbo Lu2, Kaiqiang Liu1 and Hua Xu1,

+ Author Affiliations

 Corresponding author: Hua Xu, xuhua-nano@snnu.edu.cn

DOI: 10.1088/1674-4926/26080022CSTR: 32376.14.1674-4926.26080022

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Abstract: Two-dimensional (2D) materials have attracted great research interest owing to their remarkable properties and promising application in electronic and optoelectronic devices. However, modulating the electrical conduction feature of 2D materials to match the basic requirements for constructing various functional devices is still a big challenge. Herein, we report the conduction feature modulation and device application of nonlayered 2D MnS nanosheets synthesized via chemical vapor deposition (CVD). By precisely tuning the growth temperature from 500 to 710 °C, the thickness of MnS nanosheets can be continuously modulated from ~3.5 to ~118.8 nm with the grain size changing from ~5 to ~27 μm. The as-grown MnS nanosheets possess uniform triangle morphology with high crystallinity and strong second-order nonlinear optical properties. Field-effect transistors based on MnS nanosheets exhibit an interesting conduction feature transition from p-type semiconductor to metal as the thickness increasing from thinner to thick. As results, the photodetector based on thinner MnS semiconductor achieves superior photoresponsivity of 20.47 A/W, high detectivity of 5.31×1010 Jones, and relative fast response time of 180 ms. Our findings not only enrich the family of intrinsic p-type 2D materials but also open a new avenue for electrical property engineering in non-layered 2D materials.

Keywords: 2D semiconductor, manganese sulfide, CVD growth, conduction feature modulation, photodetector



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Hu Y B, He J J, Yan Z Y, et al. High performance balanced linear polarization photodetector based on 2D ReS2. Laser Photonics Rev, 2024, 18(11): 2400661 doi: 10.1002/lpor.202400661
[48]
Zhang S T, Liu Z L, Zhao X, et al. High-polarization-Sensitivity ReS2/2H-MoTe2 heterostructure photodetector for dual-channel optical communication. ACS Photonics, 2026, 13(12): 3347 doi: 10.1021/acsphotonics.6c00319
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Fig. 1.  (Color online) Crystalline structure, morphology, and composition characterization of CVD-grown MnS nanosheets. (a) Atomic structure diagrams of MnS crystals with different lattice faces, with rose and yellow spheres representing Mn and S atom, respectively. (b) Schematic diagram of the CVD approach for the growth of MnS nanosheets. (c) OM image of as-grown MnS nanosheets on mica substrate. (d) Statistic domain size and (e) statistic thickness of MnS nanosheets grown at different temperatures. Insets present the corresponding OM and AFM images. (f) XRD of MnS nanosheets. XPS of (g) Mn 2p and (h) S 2p of MnS nanosheets.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) Structural characterization of CVD-grown MnS nanosheets. (a) Low-magnification STEM image of a triangular MnS nanosheet, (b)−(d) the corresponding EDS mapping images of (b) Mn, (c) S, and (d) the overlay of Mn and S elements. (e) Atomic-resolution STEM image of the MnS nanosheet. The corresponding FFT image is showm in inset. (f) EDS spectra of the MnS nanosheet. (g) Intensity profile extracted along the claybank dashed line in STEM image in (e).

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) SHG characterization of as-grown MnS nanosheets. (a) Schematic diagram of the SHG measurement. (b) SHG spectra of MnS nanosheet measured under different wavelengths. (c) Power-dependent SHG of MnS nanosheet under the excition of 840 nm laser. (d) SHG intensity as a function of laser power, the results can be well fitted by the electric dipole theory under the first-order perturbation[25]. (e) SHG intensity mapping of an individual triangular MnS nanosheet. (f) Polar diagram of polarization angle-dependent SHG intensity, showing a six-fold rotational symmetry.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Electrical transport properties of MnS FET devices. (a)−(c) Schematic diagram of the MnS FET devices with different thickness, (a) thinner layer, (b) thin layer, and (c) thick layer. Insets are the corresponding OM images. (d)−(f) Output and (g)−(i) transfer characteristics of MnS FET devices.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Photoelectric properties of MnS photodetectors. (a) Schematic illustration of MnS device. (b) Output and (c) transfer curves under light irradiation with various power. (d) Time-dependent photoresponse under periodic light illumination with different Vds. (e) Time-resolved photoresponse at Vds of 4 V, showing the rise and decay time. (f) Iph (right axis) and R (left axis) as a function of Pin at Vds = 2 V.

DownLoad: Full-Size Img PowerPoint
[1]
Akinwande D, Huyghebaert C, Wang C H, et al. Graphene and two-dimensional materials for silicon technology. Nature, 2019, 573(7775): 507 doi: 10.1038/s41586-019-1573-9
[2]
Nawaz M Z, Jiang X, Qin T, et al. 2D Bi2O2Se: Structure-property evolution, electronic tunability and technological prospects. Coord Chem Rev, 2026, 564: 218074 doi: 10.1016/j.ccr.2026.218074
[3]
Liu C S, Chen H W, Wang S Y, et al. Two-dimensional materials for next-generation computing technologies. Nat Nanotechnol, 2020, 15(7): 545 doi: 10.1038/s41565-020-0724-3
[4]
Guo Q B, Zhang Q H, Zhang T, et al. Colossal in-plane optical anisotropy in a two-dimensional van der Waals crystal. Nat Photonics, 2024, 18(11): 1170 doi: 10.1038/s41566-024-01501-3
[5]
Zhu C Y, Zhang Z M, Qin J K, et al. Two-dimensional semiconducting SnP2Se6 with giant second-harmonic-generation for monolithic on-chip electronic-photonic integration. Nat Commun, 2023, 14(1): 2521 doi: 10.1038/s41467-023-38131-2
[6]
Schaibley J R, Yu H, Clark G, et al. Valleytronics in 2D materials. Nat Rev Mater, 2016, 1(11): 16055 doi: 10.1038/natrevmats.2016.55
[7]
Lou Z, Liang Z Z, Shen G Z. Photodetectors based on two dimensional materials. J Semicond. 2016, 37(9): 091001
[8]
Hadke S, Kang M A, Sangwan V K, et al. Two-dimensional materials for brain-inspired computing hardware. Chem Rev, 2025, 125(2): 835 doi: 10.1021/acs.chemrev.4c00631
[9]
Xu J, Guan K J, Sun F Q, et al. Oriented growth of biocl high-κ dielectrics for pristine van der Waals electronics. Adv Funct Mater, 2026, 36(65): e77195 doi: 10.1002/adfm.77195
[10]
Li Y Y, Tang Y, Ma G B, et al. Wide bandgap lanthanide oxybromides high-κ dielectrics for high-performance two-dimensional electronics. Adv Mater, 2026, 38(22): e19042 doi: 10.1002/adma.202519042
[11]
Xu Y S, Liu K L, Peng G, et al. High-κ KBe2BO3F2 dielectric material with wide bandgap for two-dimensional electronics. Nat Commun, 2026, 17(1): 4301 doi: 10.1038/s41467-026-70711-w
[12]
Qiu Q X, Huang Z M. Photodetectors of 2D materials from ultraviolet to terahertz waves. Adv Mater, 2021, 33(15): 2008126 doi: 10.1002/adma.202008126
[13]
Zhou Z Q, Cui Y, Tan P H, et al. Optical and electrical properties of two-dimensional anisotropic materials. J Semicond, 2019, 40(6): 061001
[14]
Novoselov K S, Mishchenko A, Carvalho A, et al. 2d materials and van der Waals heterostructures. Science, 2016, 353(6298): aac9439 doi: 10.1126/science.aac9439
[15]
Frisenda R, Molina-Mendoza A J, Mueller T, et al. Atomically thin p–n junctions based on two-dimensional materials. Chem Soc Rev, 2018, 47(9): 3339 doi: 10.1039/C7CS00880E
[16]
Pan C F, Lv J, Sun D, et al. Layer-dependent asymmetric dipoles induced formation of atomically thin p–n junctions. Nano Lett, 2025, 25(49): 17185 doi: 10.1021/acs.nanolett.5c04803
[17]
Yang J, Im J, Kim J, et al. On-chip direct synthesis of 2D semimetals for van der Waals metal–semiconductor junction transistor arrays. ACS Nano, 2026, 20(12): 9940 doi: 10.1021/acsnano.5c20543
[18]
Zhai X X, Xu X, Peng J, et al. Enhanced optoelectronic performance of CVD-grown metal–semiconductor NiTe2/MoS2 heterostructures. ACS Appl Mater Interfaces, 2020, 12(21): 24093 doi: 10.1021/acsami.0c02166
[19]
Xie C J, Yang Y B, Li K, et al. A broadband photodetector based on non-layered MnS/WSe2 type-I heterojunctions with ultrahigh photoresponsivity and fast photoresponse. Materials, 2024, 17(7): 1590 doi: 10.3390/ma17071590
[20]
Huang X Y, Liu B L, Guan J L, et al. Realization of in-plane p–n junctions with continuous lattice of a homogeneous material. Adv Mater, 2018, 30(30): 1802065 doi: 10.1002/adma.201802065
[21]
Cai Z Y, Liu B L, Zou X L, et al. Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures. Chem Rev, 2018, 118(13): 6091 doi: 10.1021/acs.chemrev.7b00536
[22]
Zhou J D, Lin J H, Huang X W, et al. A library of atomically thin metal chalcogenides. Nature, 2018, 556(7701): 355 doi: 10.1038/s41586-018-0008-3
[23]
Hong Y L, Liu Z B, Wang L, et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials. Science, 2020, 369(6504): 670 doi: 10.1126/science.abb7023
[24]
Wen Y, Liu Z, Zhang Y, et al. Tunable room-temperature ferromagnetism in two-dimensional Cr2Te3. Nano Lett, 2020, 20(5): 3130 doi: 10.1021/acs.nanolett.9b05128
[25]
Chen C, Chen X D, Wu C W, et al. Air-stable 2D Cr5Te8 nanosheets with thickness-tunable ferromagnetism. Adv Mater, 2022, 34(2): 2107512 doi: 10.1002/adma.202107512
[26]
He M F, Chen C, Tang Y, et al. Epitaxial growth of nonlayered 2D MnTe nanosheets with thickness-tunable conduction for p-type field effect transistor and superior contact electrode. Acta Phys Chim Sin, 2025, 41(2): 100016 doi: 10.3866/PKU.WHXB202310029
[27]
Guo S, Yang T, Xie M, et al. In situ visualized synthesis of two-dimensional MoS2 with tunable metal-to-semiconductor transition. J Semicond, 2026, 47(0): 1
[28]
Xiong Y H, Xu D, Feng Y P, et al. P-type 2D semiconductors for future electronics. Adv Mater, 2023, 35(50): 2206939 doi: 10.1002/adma.202206939
[29]
Qu K R, Zhang Z W, Dai Y, et al. Opportunities and challenges of 2D P-type semiconductors: From material systems to electronic and optoelectronic device applications. Adv Funct Mater, 2026, 36(33): e31994 doi: 10.1002/adfm.202531994
[30]
Zou T Y, Kim H J, Kim S, et al. High-performance solution-processed 2D P-type WSe2 transistors and circuits through molecular doping. Adv Mater, 2023, 35(7): 2208934 doi: 10.1002/adma.202208934
[31]
Reed E J. Two-dimensional tellurium. Nature, 2017, 552(7683): 40 doi: 10.1038/d41586-017-07159-y
[32]
Lin S Q, Li W, Chen Z W, et al. Tellurium as a high-performance elemental thermoelectric. Nat Commun, 2016, 7(1): 10287 doi: 10.1038/ncomms10287
[33]
Qin J K, Qiu G, Jian J, et al. Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications. ACS Nano, 2017, 11(10): 10222 doi: 10.1021/acsnano.7b04786
[34]
Ghosh S, Sadaf M U K, Graves A R, et al. High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping. Nat Commun, 2025, 16(1): 5649 doi: 10.1038/s41467-025-59684-4
[35]
Li J, Zhang Y, Zhang J R, et al. Chemical vapor deposition of quaternary 2D BiCuSeO p-type semiconductor with intrinsic degeneracy. Adv Mater, 2022, 34(50): 2207796 doi: 10.1002/adma.202207796
[36]
You S D, Wu Z, Niu L J, et al. 2D ultrathin p-type ZnTe with high environmental stability. Adv Electron Mater, 2022, 8(4): 2101146 doi: 10.1002/aelm.202101146
[37]
Huang L, Wu J L, Dai C M, et al. S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor. Nat Commun, 2026, 17(1): 5530 doi: 10.1038/s41467-026-71802-4
[38]
Li N, Zhang Y, Cheng R, et al. Synthesis and optoelectronic applications of a stable p-Type 2D material: α-MnS. ACS Nano, 2019, 13(11): 12662 doi: 10.1021/acsnano.9b04205
[39]
Hu J, Tao P P, Fan W Y, et al. Synthesis and electrochemical application of two-dimensional manganese-based materials. Inorg Chem Front, 2024, 11(15): 4528 doi: 10.1039/D4QI01119H
[40]
Wang J W, Tan J Y, He L Q, et al. Facet-engineered growth of non-layered 2D manganese chalcogenides. Adv Powder Mater, 2024, 3(2): 100164 doi: 10.1016/j.apmate.2023.100164
[41]
Yang P, Yuan Y F, Zhang D, et al. Nanocapsule of MnS nanopolyhedron Core@CoS nanoparticle/carbon Shell@Pure carbon shell as anode material for high-performance lithium storage. Molecules, 2023, 28(2): 898 doi: 10.3390/molecules28020898
[42]
Wu N, Hu X C, Tang Y L, et al. Metastable square bismuth allotrope oriented by six-fold symmetric mica. npj 2D Mater Appl, 2024, 8(1): 60 doi: 10.1038/s41699-024-00495-4
[43]
Cavallini M, Graziosi P, Calbucci M, et al. Selective electrochemical decomposition of outgrowths and nanopatterning in La0.7Sr0.3MnO3 perovskite thin films. Sci Rep, 2014, 4(1): 7397 doi: 10.1038/srep07397
[44]
Sun Z W, Yi Y F, Song T C, et al. Giant nonreciprocal second-harmonic generation from antiferromagnetic bilayer CrI3. Nature, 2019, 572(7770): 497 doi: 10.1038/s41586-019-1445-3
[45]
Su J W, Wang M S, Li Y, et al. Sub-millimeter-scale monolayer p-type H-phase VS2. Adv Funct Mater, 2020, 30(17): 2000240 doi: 10.1002/adfm.202000240
[46]
Wang H Y, Li Z X, Li D Y, et al. Junction field-effect transistors based on PdSe2/MoS2 heterostructures for photodetectors showing high responsivity and detectivity. Adv Funct Mater, 2021, 31(49): 2106105 doi: 10.1002/adfm.202106105
[47]
Hu Y B, He J J, Yan Z Y, et al. High performance balanced linear polarization photodetector based on 2D ReS2. Laser Photonics Rev, 2024, 18(11): 2400661 doi: 10.1002/lpor.202400661
[48]
Zhang S T, Liu Z L, Zhao X, et al. High-polarization-Sensitivity ReS2/2H-MoTe2 heterostructure photodetector for dual-channel optical communication. ACS Photonics, 2026, 13(12): 3347 doi: 10.1021/acsphotonics.6c00319
[49]
Kim D, Park K, Lee J H, et al. Anisotropic 2D SiAs for high-performance UV–visible photodetectors. Small, 2021, 17(10): 2006310 doi: 10.1002/smll.202006310

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    Received: 20 August 2026 Revised: 18 September 2026 Online: Accepted Manuscript: 12 October 2026Uncorrected proof: 12 October 2026

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      Article Navigation >  Journal of Semiconductors  > 2026  > Uncorrected proof
      Xuejian Ma, Zunfa Wang, Chao Chen, Zongpeng Ma, Yue Tang, Hongmei Jing, Jiangbo Lu, Kaiqiang Liu, Hua Xu. Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26080022 ****X J Ma, Z F Wang, C Chen, Z P Ma, Y Tang, H M Jing, J B Lu, K Q Liu, and H Xu, Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition[J]. J. Semicond., 2026, 47(10): 102708 doi: 10.1088/1674-4926/26080022
      Citation:
      Xuejian Ma, Zunfa Wang, Chao Chen, Zongpeng Ma, Yue Tang, Hongmei Jing, Jiangbo Lu, Kaiqiang Liu, Hua Xu. Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26080022 ****
      X J Ma, Z F Wang, C Chen, Z P Ma, Y Tang, H M Jing, J B Lu, K Q Liu, and H Xu, Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition[J]. J. Semicond., 2026, 47(10): 102708 doi: 10.1088/1674-4926/26080022
      shu

      Controllable growth of nonlayered 2D MnS nanosheets with thickness-tunable semiconductor to metal transition

      DOI: 10.1088/1674-4926/26080022
      CSTR: 32376.14.1674-4926.26080022
      • 1.

        Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Provincial Basic Discipline (Surface and Interface Chemistry) Research Center, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China

      • 2.

        School of Physics and Information Technology Shaanxi Normal University, Xi’an 710119, China

      More Information
      • Xuejian Ma received her bachelor’s degree from Ningxia University in 2024. Currently, she is a master’s student at Shaanxi Normal University, under the supervision of Professor Hua Xu. Her research mainly focuses on the controllable preparation of two-dimensional oxides and their optoelectronic devices
      • Hua Xu received his doctoral degree from Lanzhou University, Lanzhou, China, in 2012. He is currently a professor with the School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, China. His current research interests include low-dimensional materials and devices
      • Corresponding author: xuhua-nano@snnu.edu.cn
      • Received Date: 2026-08-20
      • Revised Date: 2026-09-18
        • Available Online: 2026-10-12

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