Citation: |
Huang Beiju, Zhang Xu, Chen Hongda. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J]. Journal of Semiconductors, 2009, 30(10): 105005. doi: 10.1088/1674-4926/30/10/105005
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Huang B J, Zhang X, Chen H D. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J]. J. Semicond., 2009, 30(10): 105005. doi: 10.1088/1674-4926/30/10/105005.
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1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
DOI: 10.1088/1674-4926/30/10/105005
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Abstract
A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS technology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capacitance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resistance is 50 Ω, and the average input noise current spectral density is 9.7 pA/√Hz. Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.-
Keywords:
- CMOS
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References
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