Seamless-merging-oriented parallel inverse lithography technology

Yang Yiwei; Shi Zheng; Shen Shanhu

doi:10.1088/1674-4926/30/10/106002

J. Semicond. > 2009, Volume 30 > Issue 10 > 106002

SEMICONDUCTOR TECHNOLOGY

Seamless-merging-oriented parallel inverse lithography technology

Yang Yiwei, Shi Zheng and Shen Shanhu

+ Author Affiliations

DOI: 10.1088/1674-4926/30/10/106002

Abstract: Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

Key words: lithography

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Yang Yiwei, Shi Zheng, Shen Shanhu. Seamless-merging-oriented parallel inverse lithography technology[J]. Journal of Semiconductors, 2009, 30(10): 106002. doi: 10.1088/1674-4926/30/10/106002

Yang Y W, Shi Z, Shen S H. Seamless-merging-oriented parallel inverse lithography technology[J]. J. Semicond., 2009, 30(10): 106002. doi: 10.1088/1674-4926/30/10/106002.

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Received: 18 August 2015 Revised: 11 May 2009 Online: Published: 01 October 2009

Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

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