SEMICONDUCTOR DEVICES
Abstract: AMAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L : W ratio of 2 : 1 is 21.26 mV/T, and that with an L : W ratio of 4 : 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L : W ratio of 4 : 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.
Key words: nc-Si/c-Si heterojunction, MAGFET, CMOS technology, serial output, magnetic sensitivity
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Received: 18 August 2015 Revised: 21 May 2009 Online: Published: 01 November 2009
| Citation: |
Zhao Xiaofeng, Wen Dianzhong. Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET[J]. Journal of Semiconductors, 2009, 30(11): 114002. doi: 10.1088/1674-4926/30/11/114002
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Zhao X F, Wen D Z. Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET[J]. J. Semicond., 2009, 30(11): 114002. doi: 10.1088/1674-4926/30/11/114002.
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