J. Semicond. > 2009, Volume 30 > Issue 2 > 023001

SEMICONDUCTOR MATERIALS

Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Liu Hanfa, Zhang Huafu, Lei Chengxin and Yuan Changkun

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DOI: 10.1088/1674-4926/30/2/023001

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Abstract: Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 × 10-5 Ω·cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.

Key words: zirconium-doped?zinc oxide?films?transparent?conducting?films?magnetron sputtering sputtering

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    Received: 18 August 2015 Revised: 13 October 2008 Online: Published: 01 February 2009

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      Liu Hanfa, Zhang Huafu, Lei Chengxin, Yuan Changkun. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(2): 023001. doi: 10.1088/1674-4926/30/2/023001 ****Liu H F, Zhang H F, Lei C X, Yuan C K. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. J. Semicond., 2009, 30(2): 023001. doi:  10.1088/1674-4926/30/2/023001.
      Citation:
      Liu Hanfa, Zhang Huafu, Lei Chengxin, Yuan Changkun. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(2): 023001. doi: 10.1088/1674-4926/30/2/023001 ****
      Liu H F, Zhang H F, Lei C X, Yuan C K. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. J. Semicond., 2009, 30(2): 023001. doi:  10.1088/1674-4926/30/2/023001.

      Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

      DOI: 10.1088/1674-4926/30/2/023001
      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-24
      • Revised Date: 2008-10-13
      • Published Date: 2009-02-16

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