J. Semicond. > 2009, Volume 30 > Issue 2 > 024002

SEMICONDUCTOR DEVICES

A novel SOI-DTMOS structure from circuit performance considerations

Song Wenbin, Bi Jinshun and Han Zhengsheng

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DOI: 10.1088/1674-4926/30/2/024002

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Abstract: The performance of a partially depleted silicon-on-insulator (PDSOI) dynamic threshold MOSFET (DTMOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOI DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.

Key words: partially?depleted silicon-on-insulator

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    History

    Received: 18 August 2015 Revised: 12 September 2008 Online: Published: 01 February 2009

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      Song Wenbin, Bi Jinshun, Han Zhengsheng. A novel SOI-DTMOS structure from circuit performance considerations[J]. Journal of Semiconductors, 2009, 30(2): 024002. doi: 10.1088/1674-4926/30/2/024002 ****Song W B, Bi J S, Han Z S. A novel SOI-DTMOS structure from circuit performance considerations[J]. J. Semicond., 2009, 30(2): 024002. doi: 10.1088/1674-4926/30/2/024002.
      Citation:
      Song Wenbin, Bi Jinshun, Han Zhengsheng. A novel SOI-DTMOS structure from circuit performance considerations[J]. Journal of Semiconductors, 2009, 30(2): 024002. doi: 10.1088/1674-4926/30/2/024002 ****
      Song W B, Bi J S, Han Z S. A novel SOI-DTMOS structure from circuit performance considerations[J]. J. Semicond., 2009, 30(2): 024002. doi: 10.1088/1674-4926/30/2/024002.

      A novel SOI-DTMOS structure from circuit performance considerations

      DOI: 10.1088/1674-4926/30/2/024002
      Funds:

      国家基础研究重大项目基金

      • Received Date: 2015-08-18
      • Accepted Date: 2008-08-11
      • Revised Date: 2008-09-12
      • Published Date: 2009-02-16

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