J. Semicond. > 2009, Volume 30 > Issue 2 > 024003
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SEMICONDUCTOR DEVICES

Design and performance of a complex-coupled DFB laser with sampled grating

Wang Huan, Zhu Hongliang, Jia Linghui, Chen Xiangfei and Wang Wei

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DOI: 10.1088/1674-4926/30/2/024003

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Abstract: A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the +1st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385 µm, which is the +1st order wavelength of the sampled grating.

Key words: ?sampled grating,  complex-coupled,  +1st order wavelength￡?DFB, DFB

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    Received: 18 August 2015 Revised: 19 September 2008 Online: Published: 01 February 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(2): 024003
      Wang Huan, Zhu Hongliang, Jia Linghui, Chen Xiangfei, Wang Wei. Design and performance of a complex-coupled DFB laser with sampled grating[J]. Journal of Semiconductors, 2009, 30(2): 024003. doi: 10.1088/1674-4926/30/2/024003 ****Wang H, Zhu H L, Jia L H, Chen X F, Wang W. Design and performance of a complex-coupled DFB laser with sampled grating[J]. J. Semicond., 2009, 30(2): 024003. doi:  10.1088/1674-4926/30/2/024003.
      Citation:
      Wang Huan, Zhu Hongliang, Jia Linghui, Chen Xiangfei, Wang Wei. Design and performance of a complex-coupled DFB laser with sampled grating[J]. Journal of Semiconductors, 2009, 30(2): 024003. doi: 10.1088/1674-4926/30/2/024003 ****
      Wang H, Zhu H L, Jia L H, Chen X F, Wang W. Design and performance of a complex-coupled DFB laser with sampled grating[J]. J. Semicond., 2009, 30(2): 024003. doi:  10.1088/1674-4926/30/2/024003.
      shu

      Design and performance of a complex-coupled DFB laser with sampled grating

      DOI: 10.1088/1674-4926/30/2/024003

      • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093,China

      • Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093,China

      • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-02
      • Revised Date: 2008-09-19
      • Published Date: 2009-02-16

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