J. Semicond. > 2009, Volume 30 > Issue 2 > 025002

SEMICONDUCTOR INTEGRATED CIRCUITS

A 4–9 GHz 10 W wideband power amplifier

Chen Zhongzi, Chen Xiaojuan, Yao Xiaojiang, Yuan Tingting, Liu Xinyu and Li Bin

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DOI: 10.1088/1674-4926/30/2/025002

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Abstract: A 4–9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6–8 GHz band, and above 6 W over the other band. This PA module uses a balance configuration, and presents power gain of 7.3 ± 0.9 dB over the whole 4–9 GHz band and 39% power-added efficiency (PAE) at 8 GHz. Both the input and output VSWR are also excellent, which are bellow –10 dB.

Key words: wideband PA balance amplifier Lange couple microwave integrate

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    Received: 18 August 2015 Revised: 13 October 2008 Online: Published: 01 February 2009

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      Chen Zhongzi, Chen Xiaojuan, Yao Xiaojiang, Yuan Tingting, Liu Xinyu, Li Bin. A 4–9 GHz 10 W wideband power amplifier[J]. Journal of Semiconductors, 2009, 30(2): 025002. doi: 10.1088/1674-4926/30/2/025002 ****Chen Z Z, Chen X J, Yao X J, Yuan T T, Liu X Y, Li B. A 4–9 GHz 10 W wideband power amplifier[J]. J. Semicond., 2009, 30(2): 025002. doi: 10.1088/1674-4926/30/2/025002.
      Citation:
      Chen Zhongzi, Chen Xiaojuan, Yao Xiaojiang, Yuan Tingting, Liu Xinyu, Li Bin. A 4–9 GHz 10 W wideband power amplifier[J]. Journal of Semiconductors, 2009, 30(2): 025002. doi: 10.1088/1674-4926/30/2/025002 ****
      Chen Z Z, Chen X J, Yao X J, Yuan T T, Liu X Y, Li B. A 4–9 GHz 10 W wideband power amplifier[J]. J. Semicond., 2009, 30(2): 025002. doi: 10.1088/1674-4926/30/2/025002.

      A 4–9 GHz 10 W wideband power amplifier

      DOI: 10.1088/1674-4926/30/2/025002
      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-24
      • Revised Date: 2008-10-13
      • Published Date: 2009-02-16

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