
SCIENCE FUND INFORMATION
Key words: 自然科学基金,半导体科学,信息器件
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Crystallization kinetics of Sn40Se60 thin films for phase change memory applications Joshua M. Kundu, Patrick M. Karimi, Walter K. Njoroge Journal of Semiconductors, 2015, 36(6): 063002. doi: 10.1088/1674-4926/36/6/063002 |
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Design and analysis of 20 Gb/s inductorless limiting amplifier in 65 nm CMOS technology Rui He, Jianfei Xu, Na Yan, Jie Sun, Liqian Bian, et al. Journal of Semiconductors, 2014, 35(10): 105002. doi: 10.1088/1674-4926/35/10/105002 |
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Aritra Acharyya, Aliva Mallik, Debopriya Banerjee, Suman Ganguli, Arindam Das, et al. Journal of Semiconductors, 2014, 35(8): 084003. doi: 10.1088/1674-4926/35/8/084003 |
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Safa'a M. Hraibat, Rushdi M-L. Kitaneh, Mohammad M. Abu-Samreh, Abdelkarim M. Saleh Journal of Semiconductors, 2013, 34(11): 112001. doi: 10.1088/1674-4926/34/11/112001 |
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J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001 |
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Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad Aodong He, Bo Liu, Zhitang Song, Yegang Lü, Juntao Li, et al. Journal of Semiconductors, 2013, 34(7): 076002. doi: 10.1088/1674-4926/34/7/076002 |
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Jie He, Qing Pan Journal of Semiconductors, 2013, 34(3): 037001. doi: 10.1088/1674-4926/34/3/037001 |
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He Jie, Pan Qing Journal of Semiconductors, 2012, 33(2): 027001. doi: 10.1088/1674-4926/33/2/027001 |
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Ken K. Chin Journal of Semiconductors, 2011, 32(6): 062001. doi: 10.1088/1674-4926/32/6/062001 |
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He Jie, Guo Ruiqian, Pan Qing Journal of Semiconductors, 2011, 32(1): 017001. doi: 10.1088/1674-4926/32/1/017001 |
15 |
Ken K. Chin Journal of Semiconductors, 2011, 32(11): 112001. doi: 10.1088/1674-4926/32/11/112001 |
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Fatimah A. Noor, Mikrajuddin Abdullah, Sukirno, Khairurrijal Journal of Semiconductors, 2010, 31(12): 124002. doi: 10.1088/1674-4926/31/12/124002 |
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He Jie Journal of Semiconductors, 2010, 31(2): 027001. doi: 10.1088/1674-4926/31/2/027001 |
18 |
Electronic Structure of Semiconductor Nanocrystals Li Jingbo, Wang Linwang, Wei Suhuai Chinese Journal of Semiconductors , 2006, 27(2): 191-196. |
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MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, et al. Chinese Journal of Semiconductors , 2006, 27(3): 381-387. |
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Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity Zhu Kadi, Li Waisang Chinese Journal of Semiconductors , 2006, 27(3): 489-493. |
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Received: 18 August 2015 Revised: Online: Published: 01 February 2009
Citation: |
He Jie. Adapting to change, meeting challengesöanalysis of the applied projects in 2008 semiconductor discipline of National Natural Science Foundation of China[J]. Journal of Semiconductors, 2009, 30(2): 027001. doi: 10.1088/1674-4926/30/2/027001
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He J. Adapting to change, meeting challengesöanalysis of the applied projects in 2008 semiconductor discipline of National Natural Science Foundation of China[J]. J. Semicond., 2009, 30(2): 027001. doi: 10.1088/1674-4926/30/2/027001.
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