Silicide-block-film effects on high voltage drain-extended MOS transistors

Wang Lei; Gao Chao; Liu Bo; Hu Jian; Lee Po; Ju Xiaohua; Zhang Meili; Li Wenjun; Yang Steve

doi:10.1088/1674-4926/30/3/034003

Article Navigation > Journal of Semiconductors > 2009 > 30(3): 034003

Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, Ju Xiaohua, Zhang Meili, Li Wenjun, Yang Steve. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003 ****Wang L, Gao C, Liu B, Hu J, Lee P, Ju X H, Zhang M L, Li W J, Yang S. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. J. Semicond., 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003.

Citation:

Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, Ju Xiaohua, Zhang Meili, Li Wenjun, Yang Steve. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003 ****

Wang L, Gao C, Liu B, Hu J, Lee P, Ju X H, Zhang M L, Li W J, Yang S. Silicide-block-film effects on high voltage drain-extended MOS transistors[J]. J. Semicond., 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003.

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Silicide-block-film effects on high voltage drain-extended MOS transistors

DOI: 10.1088/1674-4926/30/3/034003

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China

Received Date: 2015-08-18
Accepted Date: 2008-08-18
Revised Date: 2008-09-24
Published Date: 2009-03-12

Abstract

Abstract

Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier-injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.
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Silicide-block-film effects on high voltage drain-extended MOS transistors

DOI: 10.1088/1674-4926/30/3/034003

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