Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

Xu Shengrui; Hao Yue; Duan Huantao; Zhang Jincheng; Zhang Jinfeng; Zhou Xiaowei; Li Zhiming; Ni Jinyu

doi:10.1088/1674-4926/30/4/043003

J. Semicond. > 2009, Volume 30 > Issue 4 > 043003

SEMICONDUCTOR MATERIALS

Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, Zhou Xiaowei, Li Zhiming and Ni Jinyu

+ Author Affiliations

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University, Xi'an 710071, China

DOI: 10.1088/1674-4926/30/4/043003

Abstract: Nonpolara-plane [11-20] GaN has been grown onr-plane [1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.

Key words: GaN

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Received: 18 August 2015 Revised: 19 November 2008 Online: Published: 01 April 2009

Nonpolara-plane [11-20] GaN has been grown onr-plane [1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.

Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

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Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

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Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

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