| Citation: |
Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, Zhou Xiaowei, Li Zhiming, Ni Jinyu. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. Journal of Semiconductors, 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003
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Xu S R, Hao Y, Duan H T, Zhang J C, Zhang J F, Zhou X W, Li Z M, Ni J Y. Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire[J]. J. Semicond., 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003.
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Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire
doi: 10.1088/1674-4926/30/4/043003
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Abstract
Nonpolara-plane [11-20] GaN has been grown onr-plane [1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.-
Keywords:
- GaN
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References
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Proportional views
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